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Piezoelectric material

A technology of piezoelectric materials and elements, which is applied in the selection of device materials, material selection for piezoelectric devices or electrostrictive devices, circuits, etc., and can solve the problems of deterioration of piezoelectric properties, unsuitability, and unsuitability for silicon technology. , to achieve the effect of favorable durability and excellent piezoelectric properties

Active Publication Date: 2011-02-09
UNIVERSITY OF YAMANASHI +5
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] However, although (Bi 0.5 , Na 0.5 )TiO 3 Shows excellent piezoelectric characteristics at or near room temperature, but has a problem that it shows abrupt deterioration of piezoelectric properties above 150°C and thus is not suitable for devices operating at high temperatures
[0008] In addition, when an alkali metal is contained as a component in a piezoelectric body, the piezoelectric body is not suitable for a silicon process when used as a thin film due to its deliquescence etc., so as a bulk piezoelectric body used in a device such as a piezoelectric transducer Body has durability issues

Method used

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preparation example Construction

[0057] As a method for producing the bulk of the piezoelectric material in the present invention, a general method of sintering powder under ordinary pressure can be used. However, other methods such as conduction heating, microwave sintering, millimeter wave sintering, and hot isostatic pressing may also be used.

[0058] The powder preferably has a composition in which the amount of elements contained in the A site is equal to or greater than that in the B site.

[0059] In order to obtain bulks with controlled orientation, particle orientation preparation using a magnetic field to orient or orient particles can be used. Materials that can be used in the grain orientation preparation method include Bi layered compounds and BaTiO 3 Plate particles.

[0060] The grain size of the bulk is, in terms of average grain size, 0.1 μm to 50 μm, preferably 0.5 μm to 20 μm. When the grain size is larger than 50 μm, the bulk may have poor mechanical strength. On the other hand, when ...

Embodiment 1-11

[0067] xBi(Zn 0.5 , Ti 0.5 )O 3 -yLa(Zn 0.5 , Ti 0.5 )O 3 -zBa(Sc 0.5 , Nb 0.5 )O 3 Example of

[0068] Bi 2 o 3 , ZnO, TiO 2 , La 2 o 3 、BaCO 3 、Sc 2 o 3 and Nb 2 o 5 Used as oxide materials and weighed out to constitute each target composition, they were mixed and pulverized. About 5 g of the prepared powder was weighed out and a solution of PVB (polyvinyl butyral) was added as a binder in an amount of 5-10 wt% based on the solids content of the powder, then mixed in a mortar and dried , pulverized, formed into a disc having a diameter of 10 mm, calcined, and then fired into a piezoelectric body.

[0069] Calcination at 700°C for 2 hours and firing at 1100-1350°C for 2 hours. The piezoelectric body was polished into a disk shape, then silver paste was set to form electrodes, and polarization treatment was performed with a field strength of 1 kV / mm under heating at 100° C. in silicone oil. use d 33 The piezoelectric characteristics were measured for each...

Embodiment 11

[0077] 0.3Bi(Zn 0.5 , Ti 0.5 )O 3 -0.3La(Zn 0.5 , Ti 0.5 )O 3 -0.4Ba(Mg 0.33 , Nb 0.67 )O 3 Example of

[0078] Bi 2 o 3 , ZnO, TiO 2 , La 2 o 3 、BaCO 3 , MgO and Nb 2 o 5 Used as oxide materials and weighed out to make up the target combination, they were mixed and pulverized. 15 g of the prepared powder were weighed out and calcined at 900° C. for 2 hours. The calcined powder was pressed with a press for 10 minutes to obtain a piezoelectric body. This piezoelectric body was used as a target to form a thin film having the above composition by high-frequency magnetron sputtering.

[0079] As a substrate, use SrRuO 3 (110) / YSZ(100) / Si(100). YSZ is ZrO with 3.5% Y 2 epitaxial film to form the oxide electrode SrRuO on the YSZ 3 the substrate. in Ar and O 2 A (110) piezoelectric film with a thickness of 3 μm was formed at a substrate temperature of 650° C. and a pressure of 0.5 Pa in a mixed gas atmosphere. The upper electrode was prepared by deposition of...

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Abstract

Provided is a piezoelectric material including a lead-free perovskite-type composite oxide which is excellent in piezoelectric characteristics and temperature characteristics and is represented by the general formula (1): xABO3-yA'BO3-zA''B'O3 in which A is a Bi element; A' is a rare earth element including La; B is at least one element selected from Ti, Zn, Sn and Zr; A'' is at least one element selected from Ba, Sr and Ca; B' is at least one element selected from divalent, trivalent, pentavalent, tetravalent, and hexavalent elements; and x is a value of 0.10 or more and 0.95 or less, y is a value of 0 or more and 0.5 or less, and z is a value of 0 or more and 0.7 or less, provided that x + y + z = 1.

Description

technical field [0001] The present invention relates to piezoelectric materials and in particular to novel lead-free piezoelectric materials with high Curie temperatures. Background technique [0002] Presence will be provided by the ABO 3 Piezoelectric materials composed of perovskite oxides are used in the market for inkjet heads or ultrasonic transducers. The piezoelectric material used in this field is mainly lead zirconate titanate (PZT). [0003] However, PZT contains lead as an element at the A site and is thus considered problematic due to its influence on the environment. Therefore, piezoelectric materials using lead-free perovskite-type oxides have been proposed. [0004] As piezoelectric materials composed of lead-free perovskite-type oxides, those including Bi as an element at the A site have been extensively studied. For example, Bi(Zn 0.5 , Ti 0.5 )O 3 Described in Matthew R. Suchomel et al., Chem. Mater. 2006, 18, 4987-4989. According to simulated theo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/468C04B35/475H01L41/187C01G29/00C04B35/462H01L41/08H01L41/09H01L41/18H01L41/22H01L41/257H01L41/39
CPCC04B35/462C04B2235/3206C01G23/006C04B35/547C04B2235/3284C01P2004/20H01L41/187C04B2235/3215C04B35/499C01G29/00C04B35/4682C01P2004/61C01P2002/34C04B2235/3227C04B35/475C01P2002/76C04B2235/3224C04B2235/3255C01P2006/42C01P2004/62C01G23/003C04B2235/3298H10N30/853
Inventor 林润平张祖依伊福俊博和田智志大和庆祐熊田伸弘东正树舟洼浩饭岛高志冈村总一郎
Owner UNIVERSITY OF YAMANASHI
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