The invention discloses an NPNPN-type bidirectional transient voltage suppression device which is based on a silicon planar process, has high maintaining voltage and high peak current, and is capable of bidirectionally clamping transient overvoltage. The NPNPN-type bidirectional transient voltage suppression device comprises a P-type substrate, wherein an N-type deep pit is arranged on the P-type substrate, a first P pit, a first N pit and a second P pit are arranged in the N-type deep pit, a first P+ injection region, a first N+ injection region, a second N pit and a second N+ injection region are sequentially arranged in the P pit from left to right, the second N+ injection region bridges the first P pit and the first N pit, a third N+ injection region, a third N pit, a fourth N+ injection region and a fifth P+ injection are sequentially arranged in the second P pit from left to right, the third N+ injection region bridges the second P pit and the first N pit, the first P+ injection region and the first N+ injection region are connected with a positive electrode, and the fourth N+ injection region and the second P+ injection region are connected to a negative electrode. The device can be used for transient overvoltage suppression on a chip pin with a signal level of (-5)V to (+5)V.