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Low-toxicity heat-sensitive quantum dot material and preparation method thereof

A quantum dot material and quantum dot technology, applied in the field of low-toxicity heat-sensitive quantum dot materials and their synthesis, can solve the problem of changing temperature color without paying attention to the sensitivity of heat-sensitive materials, there is no clear correspondence between temperature and color, and the change of luminous color Insufficient clarity and other problems, to achieve the effect of wide color range, good monodispersity and uniform size

Inactive Publication Date: 2013-05-01
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, since people's research in this field mainly focuses on the construction of model theory and the discovery of new materials, but does not pay attention to the sensitivity of the heat-sensitive material itself and whether the temperature-changing color is obvious, etc., there are still many problems before the actual application. problems need to be resolved
Among them, the most important thing is that the change of luminous color caused by temperature change is not clear enough, there is no clear corresponding relationship between temperature and color, and the temperature range span is small, only from red to yellow
[0007] In addition, as mentioned in the above-mentioned background material, most of the previous studies on this dual-wavelength luminescent composite nanoparticle contain the toxic element cadmium. It is well known that cadmium and its compounds have daunting toxicity. Stimulation of the respiratory tract can cause chemical pneumonia. Cadmium compounds are not easily absorbed by the intestines, but can be absorbed by the body through breathing and accumulate in the liver or kidneys, causing damage, especially the most obvious damage to the kidneys, manifested as renal tubular recycling dysfunction. It can also lead to osteoporosis and softening, which can cause death in severe cases

Method used

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  • Low-toxicity heat-sensitive quantum dot material and preparation method thereof
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  • Low-toxicity heat-sensitive quantum dot material and preparation method thereof

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Effect test

Embodiment 1

[0043] First, prepare InP quantum dots: Take 0.2 millimoles of indium acetate and 0.7 millimoles of myristic acid and add them to 5 milliliters of octadecene, heat up to 80 ° C, after vacuuming, heat up to 188 ° C under the protection of nitrogen, inject 0.5 In a milliliter concentration of 0.2mol / L 3-(trimethylsilyl) phosphorus octadecene solution and 1.2 mmol octylamine, after injection, naturally cool down to 178°C, keep the temperature at 178°C for 30 minutes to obtain InP quantum dots , the obtained InP quantum dots have a diameter of about 2nm.

[0044] Then, Cu doping is carried out: the prepared InP quantum dots are directly cooled to 60°C, and a total amount of 1 ml of octadecene solution of copper myristate with a concentration of 0.005mmol / L is dropped into the system, and then the temperature is raised to 150°C, keep the temperature for 20 minutes to get a Cu-doped InP quantum dot nucleus solution, the amount of Cu doped is Cu:P=1:20 by molar ratio.

Embodiment 2

[0046] First, prepare InP quantum dots: Take 0.2 millimoles of indium acetate and 0.7 millimoles of myristic acid and add them to 5 milliliters of octadecene, heat up to 100 ° C, after vacuuming, heat up to 188 ° C under the protection of nitrogen, inject 0.5 0.2 mol / L 3-(trimethylsilyl) phosphine octadecene solution and 1.2 mmol octylamine, after injection, naturally cool down to 178°C, keep the temperature at 178°C for 30 minutes to obtain InP quantum dots , the obtained InP quantum dots have a diameter of about 2nm.

[0047] Then, Cu doping is carried out: the prepared InP quantum dots are directly cooled to 80 ° C, and a total amount of 1 milliliter of octadecene solution of copper myristate with a concentration of 0.01 mmol / L is dropped into the system, and then the temperature is raised to 150°C, keep the temperature for 30 minutes to get a Cu-doped InP quantum dot nucleus solution, the amount of Cu doped is the molar ratio Cu:P=1:10.

Embodiment 3

[0049] First, prepare InP quantum dots: take 0.2 millimoles of indium acetate and 0.7 millimoles of myristic acid and add them to 5 milliliters of octadecene, heat up to 120 ° C, after vacuuming, heat up to 188 ° C under the protection of nitrogen, inject 0.5 0.2 mol / L 3-(trimethylsilyl) phosphine octadecene solution and 1.2 mmol octylamine, after injection, naturally cool down to 178°C, keep the temperature at 178°C for 30 minutes to obtain InP quantum dots , the obtained InP quantum dots have a diameter of about 2nm.

[0050] Then, Cu doping is carried out: the prepared InP quantum dots are directly cooled to 100° C., and a total amount of 1 milliliter of octadecene solution of copper myristate with a concentration of 0.02 mmol / L is dropped into the system, and then the temperature is raised to 150°C, keep the temperature for 40 minutes to get a Cu-doped InP quantum dot nucleus solution, the amount of Cu doped is Cu:P=1:5 by molar ratio.

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Abstract

The invention discloses a low-toxicity heat-sensitive quantum dot material and a preparation method thereof, and belongs to the technical field of semiconductor nanomaterial preparation. The preparation method comprises the steps as follows: by taking a Cu-doped InP quantum dot as a core, coating with a semiconductor ZnS isolation layer at first for isolating an inner material layer from an outer material layer, then coating with a semiconductor InP nanocrystal shell layer, and finally coating an outermost layer with a ZnS protection layer to form a Cu@InP / ZnS / CdSe / ZnS quantum dot. The quantum dot is highly sensitive to temperature, emits green light at normal temperature, red light at the temperature of 200 DEG C and different levels of yellow light at the intermediate temperature, and is stable in property, uniform in size and good in dispersity, and particles after the quantum dot is coated with the shell layer are in a perfect spherical shape; and as the quantum dot material prepared with the method is a non-cadmium semiconductor material, the quantum dot material has the advantage of low toxicity, accords with the green chemical synthesis concept, and is environment-friendly and strong in applicability.

Description

technical field [0001] The invention belongs to the technical field of semiconductor nanomaterial preparation, and relates to a low-toxicity heat-sensitive quantum dot material and a synthesis method thereof. The quantum dot material is highly sensitive to temperature, and the specific performance is that the material emits light of different colors under different temperature conditions. Moreover, the material itself and its preparation process are low-toxic and environmentally friendly. Background technique [0002] After the semiconductor material is gradually reduced from the bulk phase to a certain critical size (1-20 nanometers), the volatility of the carriers becomes significant, and the movement will be limited, resulting in an increase in kinetic energy. The corresponding electronic structure is continuous from the bulk phase to The energy level structure becomes a quasi-split discontinuity, a phenomenon known as the quantum size effect. The more common semiconduct...

Claims

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Application Information

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IPC IPC(8): C09K11/70C09K11/02
Inventor 解仁国魏爽张卓磊李冬泽杨文胜
Owner JILIN UNIV
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