The invention provides a method for improving the
optical property of a high Mn-doped
quantum dot. A method for obtaining a Mn-doped CdE
quantum dot comprises the following steps of: (1) small-
crystal nucleus growth of MnE (E belongs to chalcogens); (2) growth of a ZnE
transition layer; and (3) shell growth of CdE, so as to obtain the Mn-doped
quantum dot. Compared with the prior art, for the method, the
transition layer (ZnE) with certain thickness is introduced aiming at the characteristic of the high mismatch of
ion radius of Mn and Cd in the
quantum dot, so that the lattice imperfection caused by the mismatch of
ion dimension can be effectively reduced, the effective and controllable
doping of Mn ions in the
quantum dot can be enhanced, and the luminous efficiency can be greatly improved. Experiments prove that the
photoluminescence efficiency can reach -70% and further exceeds the highest luminous efficiency of 29% reported in the existing document. Furthermore, light is only emitted by means of the transition emission of the Mn ions 4T1-6A1, so that the problem that the conventional Mn-doped CdE
quantum dot always accompanies with the band edge
luminescence or defect
luminescence can be solved. The method is simple in equipment and controllable in technology, thereby probably being a universal method for improving the
optical property of the highly doped quantum dot.