36 results about "Mn doping" patented technology

The present invention relates to a fabrication method of gallium manganese nitride (GaMnN) single crystal nanowire, more particularly to a fabrication method of GaMnN single crystal nanowire substrate by halide vapor phase epitaxy (HVPE) in which such metal components as gallium (Ga) and manganese (Mn) react with such gas components as nitrogen (N2), hydrogen chloride (HCl) and ammonia (NH3), wherein the amount of the gas components are adjusted to control the Mn doping concentration in order to obtain nanowire having a perfect, one-dimensional, single crystal structure without internal defect, concentration of holes, or carriers, and magnetization value of which being determined by the doping concentration and showing ferromagnetism at room temperature, thus being a useful spin transporter in the field of the next-generation spintronics, such as spin-polarized LED, spin-polarized FET, etc.

The invention relates to a catalyst for low temperature catalytic combustion of polychlorinated aromatic hydrocarbon. The catalyst is Fe, Ni, Cr, Bi or Mn doped with tricobalt tetroxide. The catalyst is used for low temperature catalytic combustion elimination of the polychlorinated aromatic hydrocarbon, and is high in activity, high in chlorine poisoning resistance, long in catalytic life and has few by-products, thus being especially suitable for eliminating the polychlorinated aromatic hydrocarbon by low temperature catalysis. In air, the catalyst can be used for stably converting the polychlorinated aromatic hydrocarbon in the waste into carbon dioxide and hydrogen chloride for a long time at the lower reaction temperature, and the activity of the catalyst is not lowered.

The invention discloses a double-perovskite lithium-ion battery anode material synthesized through electric field regulated selective crystallization and a preparation method of the anode material. The anode material is characterized in that the composition of the anode material is Na0.8Ba0.2Y0.9Li0.1Co0.9Zn0.1Nb0.9Mn0.1O6. The crystallization characteristic of crystals with lattice imperfection is changed by use of an applied electric field in the specific direction in a high-temperature solid-phase reaction during preparation, and cylindrical particles are formed through growing in the electric field direction; meanwhile, parts, with high surface curvature radiuses, of cylindrical particles unevenly adhere to a sintering aid to partially be adhered into continuous porous morphology. The morphology is beneficial to reduction of crystal boundary resistance and electron transfer resistance, increases the lithium-ion migration capacity and the redox reaction rate and has certain structure rigidity to form buffer for volume change; the lithium-ion battery anode material with high performance is formed through Na and Y co-occupation in position A, Ba doping in position Na, Li doping in position Y and Zn and Mn doping in position B.

The invention provides a kind of Mn-doped composite thin film and its preparation method for regulating and controlling the resistance switch effect, comprising an upper layer film and a bottom layer film compounded together; the chemical formula of the upper layer film is Bi 0.88 Gd 0.09 Sr 0.03 Fe 0.94 mn 0.04 co 0.02 o 3 , is a polycrystalline twisted perovskite structure, the space group is R3c; the chemical formula of the underlying film is Co 1‑x mn x Fe 2 o 4 , is a cubic inverse spinel structure, and the space group is Fd3m, where x=0.1~0.7. The Co 1‑x mn x Fe 2 o 4 thin film, and then prepare BGSFMC thin film by spin coating method and layer-by-layer annealing process, forming BGSFMC / C1‑xMxFO composite thin film. The composite thin film of the invention still has good ferroelectricity and resistance switching effect while increasing the ferromagnetism.

A kind of Mn-doped SnO The preparation method of dilute magnetic semiconductor nanometer powder at room temperature adopts chemical precipitation method, and its preparation method comprises: A. prepare the mixed solution of stannous chloride and manganese acetate and ammonium bicarbonate dehydrated alcohol solution; B. Under the conditions of ultrasonic dispersion and water bath, mix the above solutions; C. Age the solution obtained in the previous step, filter the obtained precipitate, wash it with deionized water several times until the pH of the solution is neutral, and dry the obtained precipitate in an oven , grinding to obtain the original powder; D. annealing the original powder in air to obtain Mn-doped SnO2 room temperature dilute magnetic semiconductor nanopowder. The invention can prepare Mn-doped SnO2 nanometer powder with room temperature ferromagnetism at low temperature.

The present invention relates to a kind of Mn-doped CsPbCl 3 A method for preparing perovskite nanocrystals belongs to the technical field of material preparation. The Mn-doped CsPbCl 3 Perovskite nanocrystals were prepared by microwave-assisted thermal injection. The Mn-doped CsPbCl 3 The size of the perovskite nanocrystal is uniform, the doping concentration of Mn is adjustable, and the doping concentration of Mn is 0.1-32% relative to Pb. Mn-doped CsPbCl prepared by microwave-assisted thermal injection in the present invention 3 Perovskite nanocrystals have uniform size and high quality; provide Mn-doped CsPbCl 3 The method of perovskite nanocrystals can quickly synthesize a large amount of Mn, and the process is simple and controllable. By adjusting the reaction temperature, different concentrations of doping can be effectively achieved, with good repeatability.