Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation of InSb Nanowires and Manganese Doping Method Based on Multi-step Grazing Angle Deposition

A grazing angle deposition, nanowire technology, applied in the field of nanomaterials, can solve the problems of affecting magnetic behavior, unfavorable InSb lattice structure, Mn element doping, etc.

Inactive Publication Date: 2018-08-03
PEKING UNIV
View PDF9 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The growth temperature (about 500°C) in the common growth method is too high for the doping of Mn element, which is not conducive to the formation of a stable InSb lattice structure, so that the magnetic behavior is seriously affected

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation of InSb Nanowires and Manganese Doping Method Based on Multi-step Grazing Angle Deposition
  • Preparation of InSb Nanowires and Manganese Doping Method Based on Multi-step Grazing Angle Deposition
  • Preparation of InSb Nanowires and Manganese Doping Method Based on Multi-step Grazing Angle Deposition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] The present invention will be further described below through specific embodiments and accompanying drawings.

[0024] The present invention first prepares single-crystal pure In nanowires on Si / SiO2 substrates by adopting multi-step grazing angle deposition (GLAD) technology; The core-shell (core-shell) structure of Sb; finally, the core-shell structure of In and Sb is annealed at a suitable temperature to make it crystallize in the solid phase to form InSb nanowires. In this process, the present invention attempts to deposit and dope a small amount of magnetic element (Mn) between In and Sb, thereby realizing the magnetic doping of InSb nanowires.

[0025] The above-mentioned InSb nanowire preparation and doping method based on the multi-step grazing angle deposition method, as shown in Figure 1 and Figure 2, specifically includes the following steps:

[0026] (1) Preparation of In nanowires

[0027] In the process of preparing pure In nanowires by the multi-step gr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to methods for InSb nanowire manufacturing and Mn doping both based on a multi-step glancing-angle deposition process. The method for InSb nanowire manufacturing includes the steps of (1), manufacturing monocrystal pure-In nanowires by the multi-step glancing-angle deposition technology; (2), depositing Sb coating on the surface of the pure In nanowires to form an In-Sb core-shell structure; (3), subjecting the In-Sb core-shell structure to annealing treatment to realize crystallization reaction when the In-Sb core-shell structure is in solid phase so as to form the InSb nanowires. The method for Mn doping includes the steps of (1), manufacturing the monocrystal pure-In nanowires by the multi-step glancing-angle deposition technology; (2), depositing Mn coating on the surface of the pure In nanowires to form an In-Mn core-shell structure; (3), depositing Sb coating on the surface of the Mn coating and then performing annealing treatment so as to form the Mn doped InSb nanowires. By the methods, manufacturing of InSb nanowires and Mn doping at a low temperature are achieved, and the InSb nanowires with high content of Mn are obtained.

Description

technical field [0001] The invention belongs to the technical field of nanometer materials, and in particular relates to a method for preparing and doping indium antimonide (InSb) nanowires based on a multi-step grazing angle deposition method. Background technique [0002] In recent decades, dilute magnetic semiconductors have been studied as a promising material for spintronic applications. Among dilute magnetic semiconductors, Mn-doped III-V semiconductors have been a widely studied prototype. It may appear in a state where the Curie temperature is higher than room temperature, which has great potential in the application of spintronic devices in the future. However, due to the low dissolution rate of Mn in III-V semiconductors, it is very difficult to obtain highly Mn-doped dilute magnetic semiconductors under equilibrium conditions using ordinary crystal growth methods. Therefore, the unbalanced growth and doping method in III-V semiconductor nanowires is widely used ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C30B23/00C30B29/40C30B29/62B82Y40/00
CPCB82Y40/00C30B23/007C30B29/40C30B29/62
Inventor 张秋筠洪艳雪李侃邢英杰徐洪起
Owner PEKING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com