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Preparation of transient metal doped nano zinc oxide crystal whisker

A nano-zinc oxide and zinc oxide whisker technology is applied in chemical instruments and methods, zinc oxide/zinc hydroxide, single crystal growth, etc. Uniformity and other problems, to achieve the effect of simple process flow, wide raw material route and high product quality

Inactive Publication Date: 2009-08-05
INST OF PROCESS ENG CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although gas-phase doping has been widely used, it is difficult to accurately control the doping amount of doping elements in the existing gas-phase method because the vapor partial pressure of the raw material is affected by the boiling point of the raw material, evaporation temperature and system vacuum.
At the same time, due to the change of the evaporation area due to the evaporation of the product, the ratio of the raw materials is changed, so the distribution of the doping elements in the obtained product is uneven.

Method used

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  • Preparation of transient metal doped nano zinc oxide crystal whisker
  • Preparation of transient metal doped nano zinc oxide crystal whisker
  • Preparation of transient metal doped nano zinc oxide crystal whisker

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] The raw materials are zinc powder and 2% manganese chloride, which are mixed and sieved and added to the feeding tank. During the experiment, the raw material was added to the plasma at 20 g / min. The plasma parameters are as follows:

[0028] central air

[0029] The product is collected by the receiving tank, and the structure analysis of the product is shown in the attachment figure 1 , product morphology analysis see appendix figure 2 And attached image 3 , the elemental analysis of the product is shown in the appendix Figure 4 .

Embodiment 2

[0031] The raw materials are zinc powder and 0.25% manganese chloride, which are mixed and sieved and added to the feeding tank. During the experiment, the raw material was added to the plasma at 20 g / min. The plasma parameters are as follows:

[0032] central gas

[0033] The product is collected by the receiving tank, and the product morphology analysis is shown in the attached Figure 5 .

Embodiment 3

[0035] The raw materials are zinc powder and 0.25% manganese chloride, which are mixed and sieved and added to the feeding tank. During the experiment, the raw material was added to the plasma at 20 g / min. The plasma parameters are as follows:

[0036] central air

[0037] The product is collected by the receiving tank, and the product morphology analysis is shown in the attached Image 6 .

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PUM

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Abstract

The invention relates to a method for preparing nanometer zinc oxide whiskers doped with transitional mental. Zinc powder, zinc oxide, alkaline zinc carbonate or zinc hydroxide, and the like are used as zinc predecessors, and metal and metal chloride are used as doped element predecessors. After being mechanically mixed, the zinc predecessors and the doped element predecessors are added to plasma arcs to have a gas phase reaction after high-frequency induction plasma is instantaneously gasified at a high temperature, and then the uniformly doped nanometer zinc oxide whiskers are obtained by appearance control in a condensing process. The method is characterized by being applied to the doping of various elements and having high doping content and strong suitability, and the prepared nanometer zinc oxide whiskers are uniformly doped and have controllable appearance. The invention has short technological process and high yield and can continue mass production.

Description

technical field [0001] The invention relates to a method for preparing transition metal-doped nano-zinc oxide whiskers by high-frequency induction plasma, more precisely, the invention relates to a method that can use different zinc-containing materials and doping element metals or chlorides as precursors The raw material is gasified and reacted at high temperature instantaneously by high-frequency induction plasma, and then uniformly doped nano-zinc oxide whiskers are obtained through shape control during the condensation process. technical background [0002] Doping is a very important semiconductor technology. Doping can change the properties of semiconductors and realize the functionalization of devices. It is the basis of modern microelectronics technology. In recent years, with the in-depth research on one-dimensional nanomaterials, the doping of one-dimensional nanostructured materials has become a new research hotspot. Its unique one-dimensional structure and the int...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B23/00C30B25/00C30B29/16C30B29/62C01G9/03
Inventor 袁方利胡鹏白柳杨李晋林范俊梅黄淑兰
Owner INST OF PROCESS ENG CHINESE ACAD OF SCI
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