A method for making GaMnN sparse magnetic semiconductor nano wire

Abstract

The utility model discloses a method for preparing the GaMnN diluted magnetic semiconductor nanowire, comprising the following steps: 1) Mn doping: Mn is in-situ doped on the Ga2O3 nanowire; 2) ammonification: the Ga2O3 nanowire doped with the Mn is aminated in the ammonia atmosphere to obtain the GaMnN diluted magnetic semiconductor nanowire. The utility model has the advantages of simple method, low requirement for the equipment, strong ferromagnetism of the prepared GaMnN nanowire, higher Curie temperature than the ambient temperature, controllable magnetic doping concentration, high purity of the nanowire, high output and controllable linear (the nanowire with diameter varying from tens of nanometer to hundreds of nanometer is prepared through adjusting the growing parameters such as air pressure). The utility model is applied for producing the nanometer spin electronic devices, such as spin field effect transistor (spin-FET), spin light emitting diode (spin-LED) and spin resonance tunneling device (spin-RTD) and has broad application prospect.

Description

technical field [0001] The invention relates to a method for preparing nanowires, in particular to a method for preparing GaMnN dilute magnetic semiconductor nanowires. Background technique [0002] The room temperature ferromagnetism of dilute magnetic semiconductor materials is an important property of whether it can be used in the manufacture of spintronic devices. As a wide bandgap semiconductor material, GaN has excellent optical and electrical properties. In theory, GaN doped with Mn will make It has a ferromagnetic order higher than room temperature, so GaMnN dilute magnetic semiconductor materials are current research hotspots. However, due to the low solid solubility of magnetic ions in semiconductors, it is still very difficult to prepare highly doped GaMnN dilute magnetic semiconductor materials with Mn replacing lattice cations by traditional methods. Moreover, it has been reported in the literature that using the above method If the doping concentration of Mn i...

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Problems solved by technology

However, due to the low solid solubility of magnetic ions in semiconductors, it is still very difficult to prepare highly doped GaMnN dilute magnetic semiconductor materials with Mn replacing lattice cations by traditional methods. Moreover, it has been reported in the literature that using the above method If the doping concentration of Mn in GaN is greater than 3at.% during preparation, Mn ions will fill in the lattice gap instead of replacing Ga, thus forming Ga x mn y Crystal grains affect the magnetic properties of the material, and there is a problem of magnetic impurity phase precipitation

People such as Deepak (F.L.Deepak, P.U.Vanitha, A.Fovindaraj, C.N.R.Rao, Chem.Phys.Lett.374 (2003) 314) utilize carbon nanotube as template, have prepared GaMnN dilute magnetic semiconductor nanowire, but sample yield is relatively low few

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