51 results about "Resonance tunneling" patented technology

The invention provides a semiconductor quantum-dot metastable resonant tunneling diode structure and the working conditions. The structure includes: a substrate and a growth collector, a second tunnel barrier layer, quantum dots which are coupled between an emitter and the collector, a first tunnel barrier layer and the emitter which are sequentially arranged on the substrate. The working conditions include working temperature, working bias voltage and the obtainment of the metastable state of the quantum dots. The invention can eliminate the impact of the neighboring sub-level of the quantum dots on the metastable single-electron tunneling so as to achieve the purpose of improving the working temperature of the diode.

A microstrip stabilized quantum well resonance-tunneling generator which generates electromagnetic waves for millimeter and submillimeter wavelength range is provided The generator includes a resonant tunneling semiconductor quantum well diode, and a microstrip resonator. The resonant tunneling diode, the microstrip resonator and interconnecting lines and junctions are fabricated as a monolithic integrated device on a common substrate. As a result, the monolithic integrated device provides the expansion of the operation frequency range toward the terahertz region as a result of reduction of the parasitic inductance as well as of minimizing the other parasitic parameters of the electric circuitry connecting the resonant tunneling diode and resonator.

The invention discloses a light emitting diode with an electron blocking layer in a resonant tunneling structure. The light emitting diode comprises a substrate, an n-type nitride layer, a multiple quantum well layer, the electron blocking layer, a p-type nitride layer and a p-type nitride ohmic contact layer, an n-type electrode which is arranged on the n-type nitride layer, and a p-type electrode which is arranged on the p-type nitride layer, wherein the substrate, the n-type nitride layer, the multiple quantum well layer, the electron blocking layer, the p-type nitride layer and the p-type nitride ohmic contact layer are arranged in order from the bottom up. The electron blocking layer is composed of a p-type doped nitride barrier layer, a non-doped nitride potential well layer, and a non-doped barrier layer which increases the hole transmittance through a resonance tunneling effect, wherein the p-type doped nitride barrier layer, the non-doped nitride potential well layer and the non-doped barrier layer are arranged in order from bottom to top. The light emitting diode provided by the invention has the advantages that electrons are effectively prevented from passing through an active region into a p-type region, which increases the injection efficiency of a hole into the active region through the electron blocking layer; a good electronic blocking effect is realized through a simple growth mode and less layer structures; and the hole injection efficiency significantly higher than a traditional electronic blocking layer structure is acquired.

The invention relates to a novel voltage domain oscillation diode. The present invention includes a GaN substrate whose initial upper surface is a gallium plane, n + ‑qInGaN collector layer, i‑InGaN first isolation layer, i‑InGaN first barrier layer, i‑InGaN quantum well layer, i‑GaN second barrier layer, i‑InGaN second isolation layer, n + ‑InGaN emitter layer, AlN passivation layer, collector metal electrode pins, and emitter metal electrode pins. The present invention adopts the polarized electric field of the barrier layer of the GaN-based double-barrier single-quantum well superlattice structure to weaken the effect of the applied electric field, and effectively suppress the in-band resonant tunneling in the low bias voltage region; utilize the collector area close to the collector barrier The depletion layer acts as the auxiliary potential barrier of the collector barrier, and the volt-ampere characteristics in the higher bias region show multi-coordinated current oscillation, resonance tunneling and superposition of electron wave functions corresponding to each energy level, forming many differential negative resistance regions Aligned with the positive resistance area.

The invention discloses a nanowire transistor based on resonance tunneling. The nanowire transistor comprises an SOI substrate, a tunneling barrier structure, a source region, a drain region, nanowires, a grid electrode, a source electrode, a drain electrode, a grid electrode and an insulating dielectric layer. The tunneling barrier structure is located on the buried oxide layer of the SOI substrate. The source region, the drain region and the nanowire are formed by etching top silicon of the SOI substrate; the nanowire is positioned between the source region and the drain region; wherein thesource region, the drain region and the nanowire are not directly connected and are connected through a tunneling barrier structure, the insulating dielectric layer is formed on the surfaces of the source region, the drain region and the nanowire, the grid electrode is formed on the insulating dielectric layer above the nanowire, the source electrode is formed on the source region, the drain electrode is formed on the drain region, and the grid electrode is formed on the grid electrode. According to the nanowire transistor structure based on resonance tunneling and the preparation method of the nanowire transistor structure, the sub-threshold slope is reduced, and large conduction current and small source-drain contact resistance can be achieved.