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Resonant tunneling micro mechanical force sensor and method for manufacturing the same

A resonant tunneling and force sensor technology, which is applied in the field of micro-electromechanical systems and sensing, can solve the problems of limiting the working range of the sensor, difficult to maintain, and low yield, and achieves a technology suitable for mass production, small temperature coefficient, and low power. consumption effect

Inactive Publication Date: 2005-06-29
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The main structure of the tunneling effect sensor is the needle tip, which is difficult in the micromachining process and the yield is not high
In addition, the tunneling effect can only occur when the distance between the needle tip and the electrode is about 1 nanometer, which greatly limits the working range of the sensor. For example, it is difficult to maintain a distance of 1 nanometer during the vibration of the gyroscope.

Method used

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  • Resonant tunneling micro mechanical force sensor and method for manufacturing the same
  • Resonant tunneling micro mechanical force sensor and method for manufacturing the same

Examples

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Embodiment 1

[0018] Such as figure 1 Shown is an embodiment of the resonant tunneling micromechanical force sensor, that is, a structural schematic diagram of a micromechanical pressure sensor. The main structure of the resonant tunneling micromechanical pressure sensor is composed of two parts: an upper silicon wafer 1 and a lower silicon wafer 2. The sheet 2 includes a lower driving electrode 4 grown on its upper surface, a tunnel cathode 8 grown on its upper surface corresponding to the tunnel anode 5 , and a multi-thin layer structure grown on the surface of the tunnel cathode 8 . The tunneling junction 9 has a control electrode 12 grown on the surface of the tunneling junction 9 to control the emission of tunneling electrons. When working, a certain voltage is first applied between the upper and lower driving electrodes 4, and the electrostatic attraction between the two electrodes is controlled by feedback to keep the gap between the tunneling anode 5 and the control electrode 12 at...

Embodiment 2

[0045] Such as figure 2 Shown is a schematic diagram of the structure of a resonant tunneling micromachined accelerometer. The main structure of the resonant tunneling micromachined accelerometer consists of two parts: an upper silicon wafer 1 and a lower silicon wafer 2. The upper silicon wafer 1 includes a silicon beam 13 and a silicon island 11 on it, and the lower surface of the silicon beam 13 and the silicon island 11. The grown upper drive electrode 4 and the tunnel anode 5, the lower silicon chip 2 includes the lower drive electrode 4 grown on its upper surface, and also includes the tunnel cathode 8 grown on its upper surface corresponding to the tunnel anode 5, and A tunneling junction 9 with a multi-thin layer structure is grown on the surface of the tunneling cathode 8 , and a control electrode 12 for controlling the emission of tunneling electrons is grown on the surface of the tunneling junction 9 . When working, a certain voltage is first applied between the u...

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Abstract

It is resonance tunneling micro mechanical force sensor and its process method, which belongs to micro mechanical system and sensor technique field. This invention discloses a resonance tunneling micro mechanical force sensor, which mainly comprises upper and down silicon pad, wherein, the upper silicon pad has grown tunneling positive electrode on down surface; the down silicon pad has grown tunneling negative electrode in the upper surface at relative position area. The tunneling negative electrode surface grows multiple thin films of tunneling knots. The multiple structures is formed by isolation layer material and metal material alternately or by different gap semi-conductive material. This invention also discloses the process method of the said micro mechanical force sensor.

Description

technical field [0001] The invention belongs to the field of micro-electro-mechanical systems and sensing technologies, and in particular relates to a micro-mechanical force sensor based on resonance tunneling displacement sensitive characteristics and a manufacturing method thereof. Background technique [0002] In recent years, micro-mechanical sensors, especially pressure sensors, accelerometers, gyroscopes, etc., made of micro-electro-mechanical systems (MEMS) technology have been widely used in military, automotive, aerospace, It has been widely used in medical and other fields. In the fields of microgravity measurement, inclination measurement, aerospace and other fields, since the output signal of the sensor is relatively weak, in order to greatly improve the measurement accuracy of the sensor, on the one hand, the test circuit should be continuously improved; Make improvements. At present, there are two common detection methods: piezoresistive and capacitive. The p...

Claims

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Application Information

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IPC IPC(8): B81B7/02G01L1/00G01P15/08
Inventor 郭琳瑞叶雄英周兆英杨兴
Owner TSINGHUA UNIV
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