Nitride resonance tunneling diode structure suitable for ultraviolet light detection

Abstract

The invention discloses a nitride resonance tunneling diode structure suitable for ultraviolet light detection, and solves the problems that a conventional nitride resonance tunneling diode structureis not suitable for a thick light absorption layer and cannot perform ultraviolet light detection with high quantum efficiency. According to the invention, a double-barrier resonance tunneling structure is arranged in a p type doped nitride epitaxial layer / intrinsic nitride epitaxial layer / n type doped nitride epitaxial layer, and a built-in polarization electric field of a nitride heterojunctionis counteracted by using the built-in electric field of the p-i-n structure, so that the problem of energy band uplift of the GaN thick light absorption layer is solved, and the nitride resonance tunneling diode structure of the thick light absorption layer can generate resonance tunneling; and an AlGaN / GaN superlattice structure is introduced, and the alignment of a quantum well energy level anda light absorption layer conduction band energy level is adjusted by using the polarization field of the superlattice structure, so that the peak current of resonance tunneling is enhanced.

Description

technical field [0001] The invention belongs to the fields of semiconductor materials and semiconductor photodetectors, and in particular relates to a nitride resonant tunneling diode structure suitable for ultraviolet light detection. Background technique [0002] The resonant tunneling diode is a device based on the resonant tunneling quantum effect. Its basis is a semiconductor heterostructure. Miscellaneous collector) structure. As the external bias voltage of the resonant tunneling diode is gradually increased, the tunneling probability of electrons has a sharp peak at a certain energy value, and the current-voltage curve of the diode also shows a negative differential conductance characteristic. Based on the nonlinear transport characteristics of resonant tunneling diodes, in 2005, J. C. Blakesley et al. proposed a mechanism for local regulation of resonant tunneling current for photon detection [Physical review letters, 2005, 94(6), 067401]. The solution is to use p...

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Problems solved by technology

However, the conventional nitride resonant tunneling diode structure is not suitable for the thick intrinsic GaN isolation layer, because the intrinsic built-in polarization electric field of the nitride material will greatly lift the energy bands of the GaN intrinsic layer and the double barrier structure layer. , even making the structure unable to resonate tunneling

figure 1 It is the energy band simulation result of the conventional nitride resonant tunneling diode structure, using a 200nm thick intrinsic GaN layer as the light absorbing layer, it can be seen that whether it is a forward bias voltage of 2V or a reverse bias voltage of 2V, the intrinsic GaN layer of 200nm The energy bands of the GaN layer are all lifted by the polarization built-in field of the nitride heterojunction, and the lifting range is huge, which seriously affects the resonant tunneling of electrons to the double barrier structure

However, there is no combination of AlGaN / GaN / AlGaN double barrier structure and p-i-n structure for photon detection technology, especially based on the aforementioned conventional nitride resonant tunneling diode structure, and there is no combination technology for ultraviolet light detection.

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