A method for measuring tunneling characteristics between double wells based on fano resonance effect

Abstract

The invention discloses a method for measuring tunneling between double wells based on the Fano resonance effect. The specific steps are: S1: adjust an external bias source to make the double quantum well structure achieve resonant tunneling. Under the excitation of the probe light, pass The photodetector detects the distance between the double peaks of the absorption spectrum, and roughly determines the size of the tunneling characteristic; S2: Adjust the external bias source again to find a suitable tunneling detuning of the double quantum well structure, and detect the absorption spectrum again through the photodetector The asymmetry of , is the appropriate tunneling detuning, Δ is the energy level interval between the representative states; S3: Utilize the polarizability of the double quantum well structure to determine the absorption spectrum, the absorption spectrum A=c*Im(χ (1) ), where c is a constant coefficient, Im(χ (1) ) to take χ (1) The imaginary part of ; S4: numerically fitting the relationship between the asymmetry of the absorption spectrum and the variation of the tunneling characteristic, and obtained that the size of the tunneling characteristic of the double quantum well structure is inversely proportional to the asymmetry of the absorption spectrum. The invention can realize the precise measurement of the tunneling characteristic and improve the measurement accuracy.

Description

technical field [0001] The invention relates to a method for measuring tunneling characteristics between double wells, in particular to a method for measuring tunneling characteristics between double wells based on the Fano resonance effect. Background technique [0002] The tunneling coupling characteristics of semiconductor nanostructures (quantum dots, quantum wells, etc.) are the basis for coherent regulation of quantum state preparation, transfer, and reading, and in-depth research on tunneling effects is helpful for the analysis of electron orbits, spin states, and valences. Therefore, the precise measurement of the tunneling characteristics of the structure itself is a hot issue in the design of micro-nano materials and optoelectronic devices. Quantum well materials have the advantages of large electric dipole moment, long coherence time, and easy integration of devices. In coupled quantum well systems, the tunneling coupling between wells significantly changes the op...

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Problems solved by technology

At present, there are mainly electrical methods and optical methods for tunneling measurement. There are two main electrical methods: one is to reflect the size of the tunnel by accurately measuring the weak current between the source and drain; the other is to use The electrometer is close to the quantum dots, and reflects the tunneling characteristics of the quantum dots through the induced charge, which belongs to non-contact measurement. However, few of the current detection methods take into account the participation of the continuous state, and few involve the use of Fano resonance. A Method for Measuring the Size of Tunneling Characteristic Between Double Wells Based on Asymmetry of Absorption Spectrum

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