Metastable state assistant quantum dot resonance tunneling diode and working condition

Abstract

The invention provides a semiconductor quantum-dot metastable resonant tunneling diode structure and the working conditions. The structure includes: a substrate and a growth collector, a second tunnel barrier layer, quantum dots which are coupled between an emitter and the collector, a first tunnel barrier layer and the emitter which are sequentially arranged on the substrate. The working conditions include working temperature, working bias voltage and the obtainment of the metastable state of the quantum dots. The invention can eliminate the impact of the neighboring sub-level of the quantum dots on the metastable single-electron tunneling so as to achieve the purpose of improving the working temperature of the diode.

Description

technical field [0001] The invention relates to a semiconductor single-electron device, in particular to a diode structure design and working conditions for realizing single-electron resonant tunneling by utilizing quantum dot metastable state. Background technique [0002] Semiconductor double-barrier resonant tunneling diode (DB-RTD) is an electronic device that uses bound energy states to realize quantum tunneling transport; Discrete energy states can only accommodate one electron at the same time, so the resonant tunneling process of electrons through these atomic-like energy level systems becomes a single-electron tunneling process.Single-electron tunneling constitutes a limit case for electronic devices, which at the level of a single energy state Realize the control of the current, so it has important applications in some current cutting-edge technology fields, such as highly sensitive potentiometers, high quantum efficiency photodetectors, etc., and is also a possibl...

AI Technical Summary

Problems solved by technology

When the temperature-induced thermal fluctuation is close to the sum of Coulomb energy and sub-level spacing (also known as charge injection energy), the single-electron tunneling feature is affected by thermal disturbance (or called thermal smear effect) no longer exists; The thermal fluctuation (KT 300K ~25.9meV) charge injection energy, its spatial scale must be about 10 nanometers or even smaller in three dimensions, which puts forward extremely high requirements for semiconductor process technology; therefore, the current main semiconductor single-electron tunneling devices are all Can only work at low temperature, which limits the wide application of single-electron devices

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