Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Cu-doped zno nano-columnar crystal thin film with room temperature ferromagnetism and preparation method thereof

A room temperature ferromagnetic, columnar crystal technology, applied in metal material coating process, vacuum evaporation coating, coating and other directions, to achieve the effect of excellent magnetoelectricity, simple process, easy to prepare in large quantities

Active Publication Date: 2017-12-08
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, in the reported patents, researchers mainly focus on the acquisition of ferromagnetic properties of the ZnO dilute magnetic semiconductor thin film itself, the increase of the Curie temperature and the research on the preparation method, which is still far from the device application of the ZnO dilute magnetic semiconductor thin film. farther distance
However, there is no report on Cu-doped ZnO nanocolumnar thin film with room temperature ferromagnetism and its preparation method.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Cu-doped zno nano-columnar crystal thin film with room temperature ferromagnetism and preparation method thereof
  • Cu-doped zno nano-columnar crystal thin film with room temperature ferromagnetism and preparation method thereof
  • Cu-doped zno nano-columnar crystal thin film with room temperature ferromagnetism and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0029] Zn 1-x Cu x The preparation method of the O target is not limited, for example, it can be prepared by a solid phase reaction method. In one example, Zn 1- x Cu x The preparation method of O target material includes: mixing CuO powder and ZnO powder, grinding, pressing and forming, and then sintering Zn by solid phase reaction method 1-x Cu x O(x=0.01~0.1) target material. In a more preferred example, Zn 1-x Cu x The preparation method of O target includes: (a) According to Zn 1-x Cu x Weigh CuO powder with purity ≥99.99% and ZnO powder with purity ≥99.99% in the atomic ratio set by O(x=0.01~0.1), mix these powders together, and put them in the grinding tank; (b) adopt improved type The horizontal ball mill (authorized announcement number: CN203235523U) fully grinds the CuO and ZnO powders in the grinding tank; (c) presses the ground CuO and ZnO mixed powders according to the target size; (d) Compressed Zn 1-x Cu x The O(x=0.01~0.1) green body is put into a sintering furn...

Embodiment 1

[0036] Example 1Zn 0.97 Cu 0.03 Preparation of O Nano-Columnar Crystal Film

[0037] (1) Preparation of ceramic targets for thin film deposition, including: (a) Using electronic balance, according to Zn 0.97 Cu 0.03 The atomic ratio of O molecular formula weighs 1.500g of CuO powder with purity ≥99.99%, weighs 49.618g of ZnO powder with purity ≥99.99%, and mix these powders together; (b) Put these powders in the agate grinding jar, And put agate balls in it; (c) Use an improved horizontal ball mill (authorized announcement number: CN203235523U) to fully grind the CuO and ZnO powders in the grinding tank, and the grinding time is ≥48h; (d) Take out and grind After the powder, separate the agate ball; (e) Press the ground CuO and ZnO mixed powder into a disc shape according to the target size; (f) Press the pressed Zn 0.97 Cu 0.03 The O body is put into the sintering furnace; (g) Fully sintered under air atmosphere and 1100℃, sintering time ≥24h;

[0038] (2) The treatment of the sub...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

The invention relates to a Cu-doped ZnO nano-columnar crystal film with room temperature ferromagnetism and a preparation method thereof. The chemical formula of the film is Zn1-xCuxO, wherein 0.01≤x≤0.1, the film has room temperature ferromagnetism, and the microcosm of the film is The morphology is in the form of columnar crystals in the nanoscale range, and the columnar structures are evenly distributed and arranged neatly. The microscopic morphology of the Cu-doped ZnO nano-columnar crystal film of the present invention is a columnar crystal form in the nanoscale range. On the one hand, this makes the film have photoconductivity and electrical conductivity in the preferred direction, and on the other hand, it also makes the film have a larger ratio. The surface area makes this type of film have excellent magnetoelectric and magneto-optical properties.

Description

Technical field [0001] The invention relates to a Cu-doped ZnO nano columnar crystal film with room temperature ferromagnetism and a preparation method thereof, and belongs to the field of preparation of new semiconductor spintronic device materials. Background technique [0002] ZnO dilute magnetic semiconductor film is the core material of spintronic devices. It has the advantages of autonomous magnetic injection, small lattice mismatch with conventional semiconductors, and long magnetic transport distance. It is currently a hot material in international research. Spintronics devices designed based on these materials, such as Spin-FET, Spin-MTJ, Spin-LED, etc., can realize the unification of information processing, transmission and storage functions, and have faster speed and volume compared with conventional electronic devices. The advantages of smaller size and lower energy consumption have broad application prospects in the field of computing and storage devices in the futur...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/08C23C14/35
Inventor 卓世异刘学超陈卫宾施尔畏孔海宽
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com