Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method and corresponding structure of Cu-doped beta-Ga2O3 thin film

A thin film structure, -ga2o3 technology, applied in ion implantation plating, metal material coating process, coating and other directions, can solve the problem of inability to prepare thin films by low-cost methods, and achieve controllable film thickness and process controllability Strong, evenly distributed effect on the surface

Pending Publication Date: 2019-07-02
北京镓族科技有限公司
View PDF5 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention aims to solve the problem that the prior art cannot use low-cost methods to prepare high-quality Cu-doped β-Ga 2 o 3 thin film problem

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method and corresponding structure of Cu-doped beta-Ga2O3 thin film
  • Preparation method and corresponding structure of Cu-doped beta-Ga2O3 thin film
  • Preparation method and corresponding structure of Cu-doped beta-Ga2O3 thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] First take a piece of c-plane sapphire substrate and soak it in acetone, ethanol, and deionized water for 10 minutes, then rinse it with deionized water after taking it out, and finally wash it with dry N 2 Blow dry and set aside. Put the above-mentioned cleaned sapphire substrate into the deposition chamber, and grow a layer of Cu-doped Ga with a thickness of about 700 nm on it by magnetron sputtering 2 o 3 film. Ga in 99.99% purity 2 o 3 Ceramics are used as the main target, and pure Cu is used as the secondary target. Fixed Cu sputtering power 7W, Ga 2 o 3 The sputtering power was adjusted to 80W. The specific parameters of film growth are as follows: the background vacuum is 1×10 -4 Pa, the working atmosphere is Ar gas, the working pressure is 0.8Pa, the substrate temperature is 750°C, and the sputtering time is 5h. Ga 2 o 3 film at N 2 Medium annealing for 10h, the annealing temperature is 750°C. Cu:Ga=0.046:0.954 can be obtained by XPS analysis.

Embodiment 2

[0033] First take a piece of c-plane sapphire substrate and soak it in acetone, ethanol, and deionized water for 10 minutes, then rinse it with deionized water after taking it out, and finally wash it with dry N 2 Blow dry and set aside. Put the above-mentioned cleaned sapphire substrate into the deposition chamber, and grow a layer of Cu-doped Ga with a thickness of about 700 nm on it by magnetron sputtering 2 o 3 film. Ga in 99.99% purity 2 o 3 Ceramics are used as the main target, and pure Cu is used as the secondary target. Fixed Cu sputtering power 7W, Ga 2 o 3The sputtering power was adjusted to 100W. The specific parameters of film growth are as follows: the background vacuum is 1×10 -4 Pa, the working atmosphere is Ar gas, the working pressure is 0.8Pa, the substrate temperature is 750°C, and the sputtering time is 5h. Ga 2 o 3 film at N 2 Medium annealing for 10h, the annealing temperature is 750°C. Cu:Ga=0.031:0.969 can be obtained by XPS analysis.

Embodiment 3

[0035] First take a piece of c-plane sapphire substrate and soak it in acetone, ethanol, and deionized water for 10 minutes, then rinse it with deionized water after taking it out, and finally wash it with dry N 2 Blow dry and set aside. Put the above-mentioned cleaned sapphire substrate into the deposition chamber, and grow a layer of Cu-doped Ga with a thickness of about 700 nm on it by magnetron sputtering 2 o 3 film. Ga in 99.99% purity 2 o 3 Ceramics are used as the main target, and pure Cu is used as the secondary target. Fixed Cu sputtering power 7W, Ga 2 o 3 The sputtering power was adjusted to 120W. The specific parameters of film growth are as follows: the background vacuum is 1×10 -4 Pa, the working atmosphere is Ar gas, the working pressure is 0.8Pa, the substrate temperature is 750°C, and the sputtering time is 5h. Ga 2 o 3 film at N 2 Medium annealing for 10h, the annealing temperature is 750°C. Cu:Ga=0.012:0.988 can be obtained by XPS analysis.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparation method and corresponding structure of a Cu-doped beta-Ga2O3 thin film. The preparation method comprises the following steps that copper and gallium oxide are co-sputtered by a magnetron sputtering method to generate a copper-doped gallium oxide thin film; and the copper-doped gallium oxide thin film is annealed to form the copper-doped beta-Ga2O3 thin film. The atomic ratio of Cu to Ga in the copper-doped gallium oxide thin film is controlled within the range of 0.012-0.048. The surface of the prepared Cu-doped beta-Ga2O3 thin film is uniform in distribution and controllable in film thickness, the preparation method is easy to operate, and high in process controllability, and the obtained film is compact in surface, stable and uniform in thickness, capable of being prepared on a large area and good in repeatability.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronic materials, in particular to a Cu-doped β-Ga 2 o 3 The preparation method of the thin film and the corresponding structure. Background technique [0002] Bandgap width E g Gallium oxide (Ga 2 o 3 ) is a new type of highly transparent semiconductor material in the wide bandgap direct bandgap deep ultraviolet region. It has the characteristics of high UV-visible light transmittance, strong breakdown field (~8MV / cm), and low energy loss. It is a kind of multifunctional optoelectronic material with great application potential. Ga 2 o 3 Has five isomers, namely α-Ga 2 o 3 ,β-Ga 2 o 3 ,γ-Ga 2 o 3 ,δ-Ga 2 o 3 and ε-Ga 2 o 3 , at normal temperature and pressure with β-Ga 2 o 3 The most stable, the current research reports are mostly β phase. But β-Ga 2 o 3 The conductivity is relatively poor, which seriously restricts its application range. Choosing the right do...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/18C23C14/08C23C14/35C23C14/58
CPCC23C14/08C23C14/185C23C14/352C23C14/5806
Inventor 郭道友吴超贺晨冉王顺利李培刚唐为华
Owner 北京镓族科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com