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Cu-doped Type-II core-shell structure white light quantum dot material and preparation method thereof

A technology of quantum dot material and core-shell structure, applied in the field of semiconductor nanomaterial preparation, can solve the problems of reducing the luminous efficiency and luminous stability of LEDs, the technology needs to be innovated and improved, and the fluorescence quantum efficiency is low, etc., and achieves strong chemical stability and Antioxidative ability, reduction of light reflection and scattering, effect of uniform spatial distribution

Inactive Publication Date: 2014-07-30
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, each material has its own limitations: multi-size quantum dot hybrid materials have very close absorption and have obvious self-absorption phenomenon, which seriously reduces the luminous efficiency and luminous stability of LEDs; while doped materials And quantum well materials have less self-absorption phenomenon, but the luminous range is limited, and the color rendering index is low; infinitely small CdSe has a high color rendering index, but the fluorescence quantum efficiency is not high
[0006] To sum up, the existing quantum dot white light materials have certain limitations, there are problems and defects that are difficult to solve, and the technology needs to be innovated and improved

Method used

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  • Cu-doped Type-II core-shell structure white light quantum dot material and preparation method thereof
  • Cu-doped Type-II core-shell structure white light quantum dot material and preparation method thereof
  • Cu-doped Type-II core-shell structure white light quantum dot material and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0035] First, add 0.02mmol copper acetate, 0.2mmol cadmium acetate, 1mmol oleic acid, and 1mmol oleylamine to 5ml octadecene. The temperature is increased to 80°C, vacuum is applied, and then 1mmol dodecyl mercaptan is added; the temperature is increased under nitrogen protection To 120℃, inject 0.2ml of sulfur octadecene solution with a concentration of 1mol / L, keep it for 10 minutes and then cool to room temperature to obtain a 2nm Cu-doped CdS quantum dot core solution, and the amount of Cu doped is molar ratio Cu:Cd =10:100, the fluorescence quantum efficiency is 7%.

Embodiment 2

[0037] First, add 0.02mmol copper acetate, 0.2mmol cadmium acetate, 1mmol oleic acid, and 1mmol oleylamine to 5ml octadecene. The temperature is increased to 80°C, vacuum is applied, and then 1mmol dodecyl mercaptan is added; the temperature is increased under nitrogen protection At 150℃, inject 0.2ml of sulfur octadecene solution with a concentration of 1mol / L, keep it for 10 minutes and then cool to room temperature to obtain a 3nm Cu-doped CdS quantum dot core solution, and the amount of Cu doped is molar ratio Cu:Cd =10:100, the fluorescence quantum efficiency is 7%.

Embodiment 3

[0039] First, add 0.02mmol copper acetate, 0.2mmol cadmium acetate, 1mmol oleic acid, and 1mmol oleylamine to 5ml octadecene. The temperature is increased to 80°C, vacuum is applied, and then 1mmol dodecyl mercaptan is added; the temperature is increased under nitrogen protection At 180℃, inject 0.2ml of sulfur octadecene solution with a concentration of 1mol / L, keep it for 10 minutes and then cool to room temperature to obtain a 4nm Cu-doped CdS quantum dot core solution, and the amount of Cu doped is molar ratio Cu:Cd =10:100, the fluorescence quantum efficiency is 7%.

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Abstract

The invention discloses a Cu-doped Type-II core-shell structure white light quantum dot material and a preparation method thereof, which belong to the technical field of semiconductor nanometer material preparation. The core in a quantum dot structure is a Cu-doped CdS quantum dot, the core is coated with a ZnSe quantum wall to form a type-II core-shell structure which is then coated with a broad-band gap ZnS passivation protective layer, and the final quantum dot is a Cu:CdS / ZnSe / ZnS structure. The quantum dot material has continuous spectrum white light, large Stokes shift, a low self-absorption factor, high fluorescence quantum efficiency and a high color rendering index; the distribution of light colors in space is uniform; different chromaticity coordinates and color temperature can be adjusted by means of adjusting the size of the inner core CdS, the thickness of the water outer ZnSe and the doping concentration of Cu. The quantum dot material does not have light color distortion within a certain temperature range; besides, the quantum dot still has excellent light stability after being excited for a long time by blue light.

Description

Technical field [0001] The invention belongs to the technical field of semiconductor nano material preparation. It relates to a high-display white light quantum dot material suitable for blue LEDs and a synthesis method thereof. Background technique [0002] When the size of a semiconductor crystal is small to a certain extent (1-20 nanometers), the electronic energy level near its Fermi level changes from the original quasi-continuous state to discontinuous. This phenomenon is called the quantum size effect. The corresponding properties mainly depend on the size of the crystal. Typical semiconductor nanocrystals or quantum dots mainly include II-VI, III-V and IV-VI groups. These quantum dots all exhibit obvious quantum size effects, and their properties are significantly different from their bulk materials. For example, the optical properties of quantum dots depend on the size of the particles, and their absorption and emission wavelengths vary with the size. Based on these ...

Claims

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Application Information

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IPC IPC(8): C09K11/02C09K11/88C09K11/56H01L33/50
CPCY02B20/00
Inventor 解仁国张卓磊张颖杨文胜
Owner JILIN UNIV
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