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Preparation method of diluted magnetic semiconductor film

A technology of dilute magnetic semiconductor and thin film, applied in ion implantation plating, metal material coating process, coating and other directions, can solve problems in the research stage, etc., and achieve the effect of simple preparation process, good repeatability and less variables

Inactive Publication Date: 2018-10-26
(CNBM) BENGBU DESIGN & RES INST FOR GLASS IND CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, its research is getting more and more in-depth. Recent studies have shown that dilute magnetic semiconductors have received great attention due to their physical connotation and their wide application in spintronic components, but they are still in the research stage.

Method used

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Embodiment Construction

[0010] The invention provides a method for preparing a dilute magnetic semiconductor thin film, comprising the following steps:

[0011] S1. Clean the substrate to remove oil and impurities on the surface of the substrate; ordinary glass substrates can be used;

[0012] S2. Using magnetron sputtering equipment, using Cu target and Al target as sputtering targets, the substrate is placed in the vacuum chamber of the magnetron sputtering equipment, and the sputtering gas Ar and the reaction gas N are introduced. 2 , Cu target power 30W, Al target power 150W, total working pressure 0.7Pa, total flow of Ar 30sccm, N 2 The flow rate is 7 sccm, and the sputtering time is 25 min, and a Cu-doped AlN dilute magnetic semiconductor thin film is obtained by sputtering on the substrate surface.

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Abstract

The invention discloses a preparation method of a diluted magnetic semiconductor film. The preparation method comprises the following steps that S1, a substrate is cleaned, and oil contamination and impurities on the surface of the substrate are removed; and S2, magnetron sputtering equipment is adopted, a Cu target and an Al target serve as spluttering target materials, the substrate is placed ina vacuum cavity of the magnetron sputtering equipment, spluttering gas Ar and reacting gas N2 are filled, and sputtering coating is carried out on the surface of the substrate to obtain a Cu doped AlN diluted magnetic semiconductor film. The two target materials are mutually independent, technological parameters can be independently set according to the requirement, and the preparation on the diluted magnetic semiconductor film in any doped concentration can be carried out; coating on a Cu film and an AlN film is simply carried out in the whole film coating process, the process is simple, andvariables are less; and a preparation technology is simple, the repeatability is good, and a lot of cost of the target materials can be reduced.

Description

technical field [0001] The invention relates to the technical field of functional thin films, in particular to a preparation method of a dilute magnetic semiconductor thin film. Background technique [0002] In recent years, as a new type of spintronics materials, dilute magnetic semiconductors have introduced the concept of spin on the basis of traditional semiconductors, which may produce a new concept of electronic devices. At present, its research is getting more and more in-depth. Recent studies have shown that dilute magnetic semiconductors have received great attention due to their physical connotation and their wide application in spintronic components, but they are still in the research stage. Contents of the invention [0003] The object of the present invention is to provide a method for preparing a dilute magnetic semiconductor thin film, which can be used to prepare dilute magnetic semiconductor thin films with any doping concentration, and the process is simp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/06C23C14/35
CPCC23C14/0036C23C14/0641C23C14/352
Inventor 彭寿沈洪雪姚婷婷杨勇李刚
Owner (CNBM) BENGBU DESIGN & RES INST FOR GLASS IND CO LTD
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