Preparation method of diluted magnetic semiconductor film
A technology of dilute magnetic semiconductor and thin film, applied in ion implantation plating, metal material coating process, coating and other directions, can solve problems in the research stage, etc., and achieve the effect of simple preparation process, good repeatability and less variables
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[0010] The invention provides a method for preparing a dilute magnetic semiconductor thin film, comprising the following steps:
[0011] S1. Clean the substrate to remove oil and impurities on the surface of the substrate; ordinary glass substrates can be used;
[0012] S2. Using magnetron sputtering equipment, using Cu target and Al target as sputtering targets, the substrate is placed in the vacuum chamber of the magnetron sputtering equipment, and the sputtering gas Ar and the reaction gas N are introduced. 2 , Cu target power 30W, Al target power 150W, total working pressure 0.7Pa, total flow of Ar 30sccm, N 2 The flow rate is 7 sccm, and the sputtering time is 25 min, and a Cu-doped AlN dilute magnetic semiconductor thin film is obtained by sputtering on the substrate surface.
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