Method for preparing Cu doped dilute magnetic semiconductor thin film

Abstract

The invention discloses a method for preparing a Cu doped dilute magnetic semiconductor thin film. The method comprises the following steps of 1, a substrate is cleaned, oil stains and impurities on the surface of the substrate are removed; 2, an ion beam deposition equipment and a magnetron sputtering equipment are adopted, the substrate is placed in a vacuum chamber of the ion beam deposition equipment, and a Cu layer is deposited on the surface of the substrate through the ion beam; 3, the substrate deposited with the Cu layer is transferred into a vacuum chamber of the magnetron sputteringequipment, an Al target is adopted as a sputtering target material, a working gas Ar, a reaction gas N2, and an AlN layer on the surface of the Cu layer is sputtered to obtain a composite thin film;4, a sample table for heating magnetron sputtering equipment to place substrate to 500 DEG c, and annealing treatment on the composite thin film obtained in the step s3 to finally obtain the Cu dopeddilute magnetic semiconductor thin film. The method is simple in process, controllable and high in operability, the sample table heating system is used for heating the sample, so that the effect of re-uniformly distributing the doped cu in the thin film is achieved, meanwhile, the crystallization quality of the whole thin film can be improved.

Description

technical field [0001] The invention relates to the technical field of functional thin films, in particular to a method for preparing Cu-doped dilute magnetic semiconductor thin films. Background technique [0002] Diluted magnetic semiconductors (DMS) refer to magnetic semiconductors formed by replacing some atoms in non-magnetic semiconductors with transition metals (TM). Because the doped impurity concentration is generally not high, the magnetism is relatively weak, so it is called a dilute magnetic semiconductor, or a semi-magnetic semiconductor. Because it has both semiconductor and magnetic properties, that is, the two degrees of freedom of electronic charge and spin are applied in one material at the same time, which has attracted widespread attention of scientific researchers and is still in the research stage. Contents of the invention [0003] The object of the present invention is to provide a method for preparing Cu-doped dilute magnetic semiconductor thin fi...

AI Technical Summary

Problems solved by technology

Because it has both semiconductor and magnetic properties, that is, the application of two degrees of freedom of electronic charge and spin in one material at the same time, it has attracted widespread attention from scientific researchers and is still in the research stage.