460results about "Cathode sputtering application" patented technology

A fabrication process for a tunneling magnetoresistance (TMR) sensor is disclosed. In particular, a unique method of forming a barrier layer of the TMR sensor is utilized so that the TMR sensor exhibits good magnetic and TMR properties. In one particular example, the barrier layer is formed by depositing a metallic film in an argon gas in a DC magnetron sputtering module, depositing an oxygen-doped metallic film in mixed xenon and oxygen gases in an ion-beam sputtering module, and oxidizing these films in an oxygen gas in an oxygen treatment module. This three-step barrier layer formation process minimizes oxygen penetration into ferromagnetic (FM) sense and pinned layers of the TMR sensor and optimally controls oxygen doping into the barrier layer. As a result, the FM sense and pinned layers exhibit controlled magnetic properties, the barrier layer provides a low junction resistance-area product, and the TMR sensor exhibits a high TMR coefficient.

An electromagnetic noise suppressor of the present invention includes a base material 2 containing a binding agent and a composite layer 3 formed by integrating the binding agent that is a part of the base material 2 and the magnetic material. This electromagnetic noise suppressor has high electromagnetic noise suppressing effect in the sub-microwave band, and enables it to reduce the space requirement and weight. The electromagnetic noise suppressor can be manufactured by forming the composite layer 3 on the surface of the base material 2 by physical vapor deposition of the magnetic material onto the surface of the base material 2. The article with an electromagnetic noise suppressing function of the present invention is an electronic component, a printed wiring board, a semiconductor integrated circuit or other article of which at least a part of the surface is covered by the electromagnetic noise suppressor of the present invention.

A magneto-resistance device is composed of an anti-ferromagnetic layer (5), a pinned ferromagnetic layer (20), a tunnel insulating layer (9) and a free ferromagnetic layer (21). The pinned ferromagnetic layer (20) is connected to the anti-ferromagnetic layer (5) and has a fixed spontaneous magnetization. The tunnel insulating layer (9) is connected to the pinned ferromagnetic layer (20) and is non-magnetic. The free ferromagnetic layer (21) is connected to the tunnel insulating layer (9) and has a reversible free spontaneous magnetization. The pinned ferromagnetic layer (20) has a first composite magnetic layer (6) to prevent at lest one component of the anti-ferromagnetic layer (5) from diffusing into tunnel insulating layer (9).

This magnetic multilayer device comprises, on a substrate, an alternating sequence of magnetic metallic layers M and oxide, hydride or nitride layers O. The number of layers M equals at least two. The layers M are continuous. There is interfacial magnetic anisotropy perpendicular to the plane of the layers at the level of the M / O interfaces.

A magnetic disk 10 for use in perpendicular magnetic recording has at least a magnetic recording layer on a substrate 1. The magnetic recording layer is composed of a ferromagnetic layer 5 of a granular structure containing silicon (Si) or an oxide of silicon (Si) between crystal grains containing cobalt (Co), a stacked layer 7 having a first layer containing cobalt (Co) or a Co alloy and a second layer containing palladium (Pd) or platinum (Pt), and a spacer layer 6 interposed between the ferromagnetic layer 5 and the stacked layer 7. After forming the ferromagnetic layer 5 on the substrate 1 by sputtering in an argon gas atmosphere, the stacked layer 7 is formed by sputtering in the argon gas atmosphere at a gas pressure lower than that used when forming the ferromagnetic layer 5.

In the present inventive process for producing an R-Fe-B rare earth sintered magnet, first, there is prepared an R-Fe-B sintered magnet whose main phase consists of R2Fe14B compound crystal grains containing light rare earth element RL (at least one of Nd and Pr) as main rare earth element R. Subsequently, the sintered magnet body on its surface is coated with an RHM alloy layer composed of RH (wherein RH is one or two or more rare earth elements selected from among Dy, Ho and Tb) and metal M (wherein M is one or two or more metal elements selected from among Al, Cu, Co, Fe and Ag), the metal M forming RHM so as to induce a melting point lowering. Thereafter, heat treatment is carried out at 500 DEG to 1000 DEG C in vacuum or Ar atmosphere so as to cause the metal element M to diffuse from the surface into the internal portion of the sintered magnet and to cause the heavy rare earth element RH to diffuse from the surface into the internal portion of the rare earth sintered magnet body.

A cobalt-chromium-boron-platinum sputtering target alloy having multiple phases. The alloy can include Cr, B, Ta, Nb, C, Mo, Ti, V, W, Zr, Zn, Cu, Hf, O, Si or N. The alloy is prepared by mixing Pt powder with a cobalt-chromium-boron master alloy, ball milling the powders and HIP'ing to densify the powder into the alloy.

A CPP-GMR spin value sensor structure with an improved MR ratio and increased resistance is disclosed. All layers except certain pinned layers, copper spacers, and a Ta capping layer are oxygen doped by adding a partial O2 pressure to the Ar sputtering gas during deposition. Oxygen doped CoFe free and pinned layers are made slightly thicker to offset a small decrease in magnetic moment caused by the oxygen dopant. Incorporating oxygen in the MnPt AFM layer enhances the exchange bias strength. An insertion layer such as a nano-oxide layer is included in one or more of the free, pinned, and spacer layers to increase interfacial scattering. The thickness of all layers except the copper spacer may be increased to enhance bulk scattering. A CPP-GMR single or dual spin valve of the present invention has up to a threefold increase in resistance and a 2 to 3% increase in MR ratio.

A thin-film magnetic device comprises, on a substrate, a composite assembly deposited by cathode sputtering and consists of a first layer made of a ferromagnetic material with a high rate of spin polarization, the magnetization of which is in plane in the absence of any electric or magnetic interaction, a second layer made of a magnetic material with high perpendicular anisotropy, the magnetization of which is outside the plane of said layer in the absence of any electric or magnetic interaction, and coupling of which with said first layer induces a decrease in the effective demagnetizing field of the entire device, a third layer that is in contact with the first layer via its interface opposite to that which is common to the second layer and made of a material that is not magnetic and not polarizing for electrons passing through the device.

A magnetoresistance effect device including a multilayer structure having a pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least one ferromagnetic layer has at least the part contacting the barrier layer made amorphous and the barrier layer is an MgO layer having a highly oriented texture structure.

The invention discloses a coating method, a coating system and a method for preparing rare-earth magnets. In the method and the system disclosed by the invention, magnets are arranged on a conveying device in a plurality of rows in a horizontal direction; the magnets which are arranged in the plurality of rows sequentially pass through a sputtering area of sputter coating equipment to complete coating; a vertical distance between the sputter coating equipment and the upper surface of the magnets is 10mm to 200mm. The method and the system disclosed by the invention adopt continuous pass type magnetron sputtering equipment to sputter heavy rare earth such as Dy and Tb onto the surfaces of the magnets, the thickness of the sputtering layer is effectively controlled, the uniformity of the sputtering layer is guaranteed, thereby the uniformity of the magnetic property of magnetic sheets obtained by performing grain boundary diffusion to the sputtered magnets is guaranteed, and the rapid and continuous production of magnets by adopting the grain boundary diffusion technique can be realized.

The present invention provides a vertical current-type magneto-resistive element. The element includes an intermediate layer and a pair of magnetic layers sandwiching the intermediate layer, and at least one of a free magnetic layer and a pinned magnetic layer is a multilayer film including at least one non-magnetic layer and magnetic layers sandwiching the non-magnetic layer. The element area defined by the area of the intermediate layer through which current flows perpendicular to the film is not larger than 1000 μm2.

A CPP-GMR spin valve having a CoFe / NiFe composite free layer is disclosed in which Fe content of the CoFe layer ranges from 20 to 70 atomic % and Ni content in the NiFe layer varies from 85 to 100 atomic % to maintain low Hc and λS values. A higher than normal Fe content in the CoFe layer improves the MR ratio by ≧16% compared with conventional CoFe / NiFe free layers in which the Fe content in CoFe is typically <20 atomic % and the Ni content in NiFe is <85 atomic %. The CPP-GMR performance may also be optimized by incorporating a confining current path layer in the copper spacer between the pinned layer and free layer. For a pinned layer with an AP2 / Ru / AP1 configuration, the spin valve performance is further improved by an AP1 layer comprised of a lamination of CoFe and Cu layers as in [CoFe / Cu]2 / CoFe.

First, an R—Fe—B based rare-earth sintered magnet body including, as a main phase, crystal grains of an R2Fe14B type compound that includes a light rare-earth element RL, which is at least one of Nd and Pr, as a major rare-earth element R is provided. Next, an M layer, including a metallic element M that is at least one element selected from the group consisting of Al, Ga, In, Sn, Pb, Bi, Zn and Ag, is deposited on the surface of the sintered magnet body and then an RH layer, including a heavy rare-earth element RH that is at least one element selected from the group consisting of Dy, Ho and Tb, is deposited on the M layer. Thereafter, the sintered magnet body is heated, thereby diffusing the metallic element M and the heavy rare-earth element RH from the surface of the magnet body deeper inside the magnet.