163 results about "Ion beam deposition" patented technology

A method for producing single layer or multilayer films with high thickness uniformity or thickness gradients. The method utilizes a moving mask which blocks some of the flux from a sputter target or evaporation source before it deposits on a substrate. The velocity and position of the mask is computer controlled to precisely tailor the film thickness distribution. The method is applicable to any type of vapor deposition system, but is particularly useful for ion beam sputter deposition and evaporation deposition; and enables a high degree of uniformity for ion beam deposition, even for near-normal incidence of deposition species, which may be critical for producing low-defect multilayer coatings, such as required for masks for extreme ultraviolet lithography (EUVL). The mask can have a variety of shapes, from a simple solid paddle shape to a larger mask with a shaped hole through which the flux passes. The motion of the mask can be linear or rotational, and the mask can be moved to make single or multiple passes in front of the substrate per layer, and can pass completely or partially across the substrate.

The fabrication of the overcoat layer starts with a low energy ion beam to avoid magnetic layer implantation problems, followed by higher deposition energies where the higher energy atoms are implanted into the previously formed lower energy overcoat layer, rather than the magnetic layer. The energy gradient ion beam deposition process therefore results in a thin overcoat layer that is denser than a comparable layer formed by low energy magnetron sputtering, and which overcoat layer provides good mechanical and corrosion protection to the magnetic layer, without degrading the magnetic properties of the magnetic layer.

A method of making a magnetic head assembly wherein the magnetic head assembly has a write head with a pole tip includes the steps of forming a shaping layer on an underlying layer wherein the shaping layer has a side surface and a top surface, ion beam sputter depositing a ferromagnetic material layer on the underlying layer and on the side and top surfaces of the shaping layer and removing first and second portions of the ferromagnetic material layer from the underlying layer and the top surface of the shaping layer, respectively, leaving a remaining portion of the ferromagnetic material layer on the side surface of the shaping layer which is the aforementioned pole tip.

Ion sources and methods of operating an electromagnet of an ion source for generating an ion beam with a controllable ion current density distribution. The ion source (10) includes a discharge chamber (16) and an electromagnet (42; 42a-d) adapted to generate a magnetic field (75) for changing a plasma density distribution inside the discharge chamber (16). The methods may include generating plasma (17) in the discharge space (24), generating and shaping a magnetic field (75) in the discharge space (24) by applying a current to an electromagnet (42; 42a-d) that is effective to define the plasma density distribution, extracting an ion beam (15) from the plasma (17), measuring a distribution profile for the ion beam density, and comparing the actual distribution profile with a desired distribution profile for the ion beam density. Based upon the comparison, the current applied to the electromagnet (42; 42a-d) may be adjusted to modify magnetic field (75) the magnetic field in the discharge space and, thereby, alter the plasma density distribution.

Thin films of single crystal-like materials are made by using flow-through ion beam deposition during specific substrate rotation around an axis in a clocking action. The substrate is quickly rotated to a selected deposition position, paused in the deposition position for ionized material to be deposited, then quickly rotated to the next selected deposition position. The clocking motion can be achieved by use of a lobed cam on the spindle with which the substrate is rotated or by stopping and starting a stepper motor at long and short intervals. Other symmetries can be programmed into the process, allowing virtually any oriented inorganic crystal to be grown on the substrate surface.

A focused ion beam apparatus and a focused ion beam irradiation method are disclosed. Even in the case where a magnetic field exists on the optical axis of an ion beam and the particular magnetic field undergoes a change, the ion beam is focused without separating the isotopes on the sample at the same ion beam spot position as if the magnetic field is not existent. A canceling magnetic field is generated on the optical axis of the ion beam from a canceling magnetic field generator thereby to offset the deflection of the ion beam due to the external magnetic field.

The invention relates to the field of direct controllable preparation of metallic single-walled carbon nanotubes, and particularly discloses a method for preferentially growing a metallic single-walled carbon nanotube by using non-metallic silicon oxide as a catalyst. A silicon oxide film is deposited on a silicon substrate with nano silicon oxide thermal oxidization layer by an Ar ion beam deposition method, nucleation and precipitation of nano particles are realized by control on pretreatment conditions, and regulation on particle size and distribution is also realized, finally, the metallic single-walled carbon nanotube with the diameter about 1.2nm is obtained under proper growth conditions, and the content of the metallic single-walled carbon nanotube is more than 80% of the amount of the single-walled carbon nanotubes. In the method provided by the invention, starting from controlling the catalyst on which the single-walled carbon nanotube depends in the nucleation phase, based on the property of high melting point of the non-metallic catalyst, the direct growth of the single-walled carbon nanotube with narrower diameter distribution is realized, the bottleneck of metallic single-walled carbon nanotube control preparation in the present stage is broken, and new knowledge is provided for the nucleation mechanism of the single-walled carbon nanotube with special structure.