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77results about How to "Good radiation resistance" patented technology
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Full transparent AlGaN/GaN high electron mobility transistor and manufacturing method thereof
ActiveCN101771076ARealize full transparencyImprove conductivitySemiconductor/solid-state device manufacturingSemiconductor devicesOhmic contactSource area
The invention discloses an AlGaN / GaN high electron mobility transistor taking transparent low-resistivity ZnO as a grate electrode, a source electrode and a drain electrode and a manufacturing method thereof, which relate to the field of microelectronic technology and mainly solve the problems that the conventional AlGaN / GaN high electron mobility transistor cannot be used in the field of full transparence and the conventional full transparent transistor has poor characteristics. The transistor sequentially comprises a GaN buffer layer, an intrinsic GaN layer, an Al0.3Ga0.7N layer, a GaN cap layer, the source electrode, the drain electrode and the gate electrode according to the growth sequence, wherein all the source electrode, the drain electrode and the gate electrode are made of a transparent ZnO material doped with Al2O3; an underlay is made of a sapphire with two polished sides; the source electrode, the drain electrode and the gate electrode are deposited on the GaN cap layer by a megnetron sputtering method; and Si+ ions are implanted into a source area and a drain area to assist an ohmic contact formation between the source area and the drain area. The full transparent AlGaN / GaN high electron mobility transistor has the advantages of full transparence and high characteristics, and can be used for electronic elements in an anti-radioactive circuit in the field of transparence.
Owner:云南凝慧电子科技有限公司
AlGaN/GaN high-electron-mobility transistor and manufacturing method thereof
ActiveCN101853880AImprove frequency characteristicsGood radiation resistanceSemiconductor/solid-state device manufacturingSemiconductor devicesEpitaxial materialEngineering
The invention discloses an AlGaN / GaN high-electron-mobility transistor and a manufacturing method thereof, which relate to the technical field of microelectronics and mainly solve the problems of low working frequency and poor anti-irradiation performance of the transistor. The transistor sequentially comprises a GaN buffer layer, an intrinsic GaN layer, an Al0.3Ga0.7N layer, a GaN capping layer, a source electrode, a drain electrode and a grid electrode according to a growth sequence, wherein transparent ZnO is adopted by the grid electrode, an Ni metal bonding layer is evaporated below the ZnO grid electrode, and SiN protection layers are arranged at both sides. Al2O3 is doped in the ZnO grid electrode, and the length of the ZnO grid electrode is equal to the distance between the source electrode and the drain electrode. The manufacturing process of the transistor sequentially comprises the following steps of: firstly, growing an epitaxial material; then manufacturing the ZnO grid electrode; and finally, manufacturing the source electrode and the drain electrode at both sides of the ZnO grid electrode by utilizing a self-aligning method. The AlGaN / GaN high-electron-mobility transistor has the advantages of high frequency characteristic and good anti-irradiation characteristic and can be used as an electronic component in high-frequency and high-speed circuits.
Owner:云南凝慧电子科技有限公司
Anti-radiation wide spectrum fiber light source
ActiveCN102386553AGood radiation resistanceImprove stabilityActive medium shape and constructionLoop controlClosed loop
The invention discloses an anti-radiation wide spectrum fiber light source. 980nm pump light can be coupled in an Er-doped fiber by a wavelength division multiplexer (WDM), and mixed light is output after the light is amplified through spontaneous emission (ASE) of erbium ions; the mixed light can generate reflected light after being processed by a second WDM and a reflecting mirror; the remnant 980nm pump light output from the second WDM can be converted to a voltage signal by a 980nm monitoring detector, and the voltage signal can act on a 980nm pump light source after being processed by a microprocessor and a digital constant current source; and an automatic temperature control circuit can ensure the 980nm pump light source to work at the temperature of 25 DEG C. The wide spectrum fiber light source provided by the invention utilizes the electrical signal output by the 980nm monitoring detector as a basis of feedback regulation and regulates drive current to control the stability of power and average wavelength of the output ASE light by using the negative feedback closed loop control principle, and thus the anti-radiation problem of the wide spectrum fiber light source can be well solved by using an active protective technology under the condition of not increasing the weight of the light source system.
Owner:BEIHANG UNIV
Ionization-irradiation-resistant active optical fiber for space
InactiveCN102147496AGood radiation resistanceWork around limited usageOptical fibre with multilayer core/claddingOptical waveguide light guideRare-earth elementFiber
The invention relates to an ionization-irradiation-resistant active optical fiber for space. The ionization-irradiation-resistant active optical fiber comprises an active fiber core, an inner cladding layer, an outer cladding layer and a coating layer; the materials of the active fiber core comprise active reactive ions and silicon dioxide of a co-doping agent, wherein the active reactive ions are one or more of halides or oxides of rare-earth elements of which the atomic number is from 57 to 71, and the co-doping agent is one or more of germanium compounds, phosphorus compounds, aluminum compounds and fluorine compounds; cerium compounds are doped in the material of the active fiber core and the dosage concentration of the cerium compounds is between 2,000 and 10,000ppm; and cerium or fluorine can be also doped in the material of the inner cladding layer, wherein the dosage concentration of cerium ions is between 0 and 8,000ppm, and the dosage concentration of fluorine ions is between 0 and 1,000ppm. In the invention, the ionization-irradiation-resistant characteristics of the active optical fiber can be greatly improved according to test verification because the cerium is doped in the fiber core of the ionization-irradiation-resistant active optical fiber, and the problem of application restriction of the current active optical fiber in an irradiation environment is solved.
Owner:HUAZHONG UNIV OF SCI & TECH
Single event upset resistant SRAM (Static Random Access Memory) type FPGA (Field Programmable Gate Array) refresh circuit and refresh method
ActiveCN104051002AReduce complexityReduce power consumptionDigital storageCircuit complexityInstability
The invention relates to the field of spatial single event upset resistance of an FPGA (Field Programmable Gate Array), and particularly relates to a single event upset resistant SRAM (Static Random Access Memory) type FPGA refresh circuit and a refresh method, aiming at solving the problems such as high circuit complexity and controller instability as an existing SRAM type FPGA refresh circuit and a method utilize an external controller for achieving the reloading of a configuration command and configuration data. Two same memories are adopted, a complete configuration file is stored in a BOOT, the configuration file contains a functional module to be realized by a user and a refresh module for realizing refresh of the FGPA, an edited configuration file is stored in an SCRUB, after the FPGA loads the first memory, the refresh module is started to enter a refresh mode, and periodical refresh of the FPGA under normal working is achieved by periodically reading the configuration file in the SCRUB memory. The single event upset resistant SRAM type FPGA refresh circuit and the refresh method provided by the invention have the advantages that the power consumption for FPGA refresh and the circuit complexity are effectively reduced.
Owner:CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
High-quality four-junction space solar cell and preparation method thereof
ActiveCN112447868AEffective BandgapImprove material qualityFinal product manufactureSemiconductor devicesBandgap gradingParticle physics
The invention discloses a high-quality four-junction space solar cell and a preparation method thereof. The high-quality four-junction space solar cell comprises a Ge substrate, and a Ge sub-cell, a GaInP nucleating layer, a GaInAs buffer layer, a first tunneling junction, a component gradient buffer layer, a DBR reflection layer, a GaInAs sub-cell, a second tunneling junction, an AlGaInAs sub-cell, a third tunneling junction and an AlGaInP sub-cell are sequentially arranged on the Ge substrate. Depletion layers are formed between base regions and emitter regions of the AlGaInAs sub-cell and the AlGaInP sub-cell, the base regions and the emitter regions are of band gap gradual change structures, and the band gap gradual change structures are introduced into the Al-containing sub-cell, so that the material quality of the depletion layers is improved, the minority carrier recombination rate of a main photon-generated carrier generation region is reduced, and the photon-generated carriercollection efficiency is improved. The gradual change band gap has the effect of an auxiliary back field, so that photon-generated carriers far away from the depletion layer drift towards the depletion layer, the Al component far away from the depletion layer enables the effective band gap of the Al-containing sub-cell to be wider, and higher open-circuit voltage can be obtained.
Owner:ZHONGSHAN DEHUA CHIP TECH CO LTD
CMOS rear end technology-embedded ferroelectric random memory and preparation method thereof
InactiveCN108520878AReduce manufacturing costImprove storage densitySolid-state devicesCapacitorsCapacitanceRandom access memory
The invention provides a CMOS rear end technology-embedded ferroelectric random access memory with high storage density and low process cost and a preparation method thereof. The characteristics of the low-temperature annealing process of the new ferroelectric material hafnium oxide or zirconia are used and the appropriate upper and lower metal electrodes are combined, so that a capacitor is integrated into the CMOS rear end process line to realize information storage and reading. In addition, the present invention also discloses a preparation method for preparing a ferroelectric memory whichis fully compatible with a 0.13 [mu]m CMOS process line, does not require a special barrier layer and packaging technology, and has good radiation resistance.
Owner:XIANGTAN UNIV
High temperature radiation resistant magnetostriction alloy
ActiveCN103556071AHigh curie temperatureGood radiation resistanceMagnetostrictive device manufacture/assemblyMagnetostrictive material selectionHigh dosesChemical composition
The invention discloses a high temperature radiation resistant magnetostriction alloy as well as a preparation method thereof. The alloy comprises the following chemical components in percent by weight: 43.0-66.0% of Ni, 0-5.0% of Cr, 1.0-3.5% of Mo, 1.0-3.0% of Ti, 0-1.0% of Al and the balance of Fe. The high temperature radiation resistant magnetostriction alloy disclosed by the invention has higher Curie temperature, good magnetostriction performance in a wider temperature range and great saturated magnetostriction coefficient, is excellent in resistance to radiation in a reactor and free from irradiation activation or disintegration caused by high dose of neutrons or gamma rays, and can satisfy the using demands of great irradiation dose at high temperatures of a reactor core of the reactor.
Owner:CHONGQING MATERIALS RES INST
65nm technology-based super-steep reverse-doping radiation-proof MOS field-effect tube
ActiveCN105514169AImprove radiation resistanceDoes not affect integrationSemiconductor/solid-state device detailsSolid-state devicesSubthreshold oscillationsThreshold voltage
The invention discloses a 65nm technology-based super-steep reverse-doping radiation-proof MOS field-effect tube, mainly solving the problems of increased OFF leakage current, threshold voltage drift and subthreshold oscillation amplitude degradation of a conventional 65nm MOS field-effect tube under a total dose radiation environment. The MOS field-effect tube comprises a P-type substrate (1) and an epitaxial layer (2) located on the substrate, wherein an isolation groove (3) is formed around a place above the epitaxial layer, a grid electrode (4) is arranged at the middle above the epitaxial layer, a source region (5) and a drain region (6) are arranged in the epitaxial layer between two side boundaries of the grid electrode and the inner boundary of the isolation groove, light-doping source-drain regions (7) are arranged in the epitaxial layer below the two side boundaries of the grid electrode, a channel is formed in an area between the two light-doping source-drain regions and right below the grid electrode, and a heavy-doping super-steep reverse-doping region (8) is arranged below the channel between the two light-doping source-drain regions. The 65nm technology-based super-steep reverse-doping radiation-proof MOS field-effect tube improves the total dose irradiation resistance of a device, and can be used for the preparation of large scale integrated circuits.
Owner:XIDIAN UNIV
Preparation method of MAX-phase-imitating accident fault-tolerant nuclear fuel pellet
ActiveCN106927832ALow costImprove processing stabilityFuel elementsNuclear energy generationNuclear reactorIrradiation
The invention discloses a preparation method of a MAX-phase-imitating accident fault-tolerant nuclear fuel (U3Si2C2) pellet. U3Si2C2 is obtained by carrying out reactive sintering on uranium dioxide, a silicon-containing phase, carbon powder, a bonding agent and a sintering aid at a high temperature. Compared with U3Si2C2 prepared through traditional electric arc melting, U3Si2C2 prepared through the method has the advantages of low cost and good process stability. The nuclear fuel combines the excellent irradiation resistance, thermal conductance and oxidation resistance of the MAX phase and can be applied to traditional water reactors and a new generation of nuclear reactors.
Owner:MATERIAL INST OF CHINA ACADEMY OF ENG PHYSICS
Chinese angelica acidic polysaccharide component, and preparation method and application thereof
InactiveCN105985451AEnhance immunityGood radiation resistanceOrganic active ingredientsAntinoxious agentsDrugChemistry
The invention relates to a Chinese angelica acidic polysaccharide component, a preparation method thereof, and an application thereof in the preparation of drugs and health products for preventing cancers, enhancing immunity and preventing radiation damages, and belongs to the field of traditional Chinese medicine modernization. The method comprises the following steps: degreasing Chinese angelica roots, carrying out refluxing extraction with alkaline water, precipitating polysaccharides with alcohol, removing proteins, carrying out dialysis, carrying out anion exchange column DEAE serial column grading, eluting a part size exclusion chromatograph with 0.5mol / L of NaCl, further purifying, carrying out reduced pressure concentration on the above obtained 50kD or above component, and freeze-drying the obtained concentrate to obtain the Chinese angelica acidic polysaccharide component. The Chinese angelica acidic polysaccharide component has substantial cancer prevention, immunity enhancement and radiation damage prevention effects.
Owner:FOURTH MILITARY MEDICAL UNIVERSITY
Low-thermal-resistance radiation-resistant nano multilayer film material and preparation method thereof
ActiveCN106350771AReduced thermal performanceImprove thermal conductivityVacuum evaporation coatingSputtering coatingHeat conductingSingle layer graphene
The invention discloses a low-thermal-resistance radiation-resistant nano multilayer film material. The material has a multilayer composite structure formed by cross stacking of metal tungsten nano films and single-layer graphene. A preparation method of the material comprises the following steps: depositing a metal tungsten nano film on a silicon dioxide substrate; transferring single-layer graphene onto the surface of the metal tungsten nano film; and alternately depositing a metal tungsten nano film and transferring single-layer graphene to obtain the low-thermal-resistance radiation-resistant nano multilayer film material. Aiming at the problem that the present bimetal multilayer film structure can greatly lower the thermal property of the material, the material provided by the invention integrates excellent heat-conducting property and radiation resistance and has the multilayer composite structure formed by cross stacking of metal tungsten nano films and single-layer graphene, so that the thermal conductivity lowering caused by the presence of a multilayer film structural interface can be reduced, and the excellent radiation resistance of the material can be kept.
Owner:WUHAN UNIV
Weather-resistant fadeproof organic paint for colored steel plates
ActiveCN103992711AHigh mechanical strengthGood radiation resistanceCoatingsPolyvinylidene fluorideSolvent
The invention provides a weather-resistant fadeproof organic paint for colored steel plates, which is characterized by comprising the following raw materials in parts by weight: 20-35 parts of polyacrylic resin, 20-30 parts of polyvinylidene fluoride resin, 3-5 parts of polymethyl siloxane, 5-8 parts of titanium white, 5-8 parts of aluminum powder, 2-3 parts of graphite powder, 2-3 parts of leveling agent, 4-6 parts of Ti2AlC / TiAl composite material, 0.5-2 parts of organobentonite, 0.5-1 part of stabilizer, 0.2-1 part of dispersing agent, 0.5-1 part of defoaming agent and 30-40 parts of solvent. The paint has the advantages of high coating adhesion firmness, high flexibility, high binding force, high impact resistance, high acid / alkali resistance, high aging resistance, high glossiness, high curing rate, high water resistance, high durability, high compatibility, favorable weather resistance, small influence of film thickness difference on color difference, and the like, and thus, is a weather-resistant fadeproof organic paint for colored steel plates with excellent comprehensive properties.
Owner:SHANDONG HUIJIN COLOR STEEL
Low-voltage power cable for nuclear power station
InactiveCN102956324AImprove conductivityNot easy to damagePower cables with screens/conductive layersInsulated cablesNuclear radiationElectrical conductor
The invention relates to a low-voltage power cable, in particular to a low-voltage power cable for a nuclear power station. The low-voltage power cable comprises at least two conductors (1), an insulation layer (2) is extruded outside each conductor (1), each conductor (1) and the corresponding insulation layer (2) form a core (3), each core (3) and packing (4) are stranded into a cable core (5), a wrapping layer (6), a shielding layer (7) and a sheath (8) are arranged outside the cable cores (5) sequentially, the shielding layer (7) is a combination of a copper-plastic composite belt and a copper wire braided layer, the wrapping layer (6) wraps the cable cores (5), and the sheath (8) is extruded outside the shielding layer (7). Therefore, the low-voltage power cable for the nuclear power station is high in long-term thermal aging resistance, nuclear radiation resistance, DBA (design basis accident) resistance and immersion performance after DBA.
Owner:JIANGSUSNGSHANG CABLE GROUP
Film bulk acoustic resonator and manufacturing method thereof
PendingCN110957989ALow costReduce power consumptionImpedence networksThin-film bulk acoustic resonatorCommunications system
The invention discloses a film bulk acoustic resonator and a manufacturing method thereof. The manufacturing method comprises the steps of manufacturing a lower electrode on a first surface of an SOIsubstrate; forming a piezoelectric layer on the first surface of the SOI substrate and the lower electrode; forming a top electrode on the piezoelectric layer; and processing the second surface of theSOI substrate to form an air cavity, wherein the second surface and the first surface are arranged back to back. According to the manufacturing method provided by the invention, the preparation process of the FBAR is simplified, the AlN film crystal grown by the method is high in quality, the performance of the device is improved, and the frequency of the resonator is adjusted by controlling thethickness of top silicon through the position of silicon oxygen injection isolation; and the SOI material has the characteristics of low power consumption, high integration density, radiation resistance and the like, so that the complexity of a device preparation process is reduced, and the film bulk acoustic resonator is applicable to a radio frequency front end of a future 5G communication system.
Owner:SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
High-elasticity anti-radiation nanofiber aerogel material and preparation method thereof
ActiveCN113831581AExcellent radiation resistanceAvoid reunionMonocomponent synthetic polymer artificial filamentNon-woven fabricsPolyvinyl alcoholTitanium oxide
The invention relates to a high-elasticity anti-radiation nanofiber aerogel material and a preparation method thereof. The method comprises the steps of mixing and stirring tetraethoxysilane, phosphoric acid and water evenly for 1-24 h, then adding titanium dioxide nano powder, continuing stirring for 1-12 h, and conducting ultrasonic treatment to obtain composite hydrolysate; uniformly mixing a polyvinyl alcohol aqueous solution and the composite hydrolysate with water, conducting stirring for 1-12 hours, and then carrying out electrostatic spinning on the precursor solution to obtain a hybrid nanofiber membrane; carrying out heat treatment on the hybrid nanofiber membrane; adding the hybrid nanofiber membrane subjected to heat treatment, tetraethoxysilane, boric acid and aluminum chloride into water, adding a graphene oxide solution, and conducting stirring at a high speed to obtain a homogeneous dispersion liquid; and then sequentially subjecting the homogeneous dispersion liquid to freezing, freeze drying and post-treatment processes, so as to prepare the high-elasticity anti-radiation nanofiber aerogel material. The material prepared by the invention has high elasticity and also has excellent radiation resistance, temperature resistance and high-temperature heat insulation performance.
Owner:AEROSPACE INST OF ADVANCED MATERIALS & PROCESSING TECH
Radiation-resistant ABS (acrylonitrile-butadiene-styrene)-based composite shoe material and preparation method thereof
The invention provides a radiation-resistant ABS (acrylonitrile-butadiene-styrene)-based composite shoe material and a preparation method thereof. The radiation-resistant ABS-based composite shoe material is prepared from, by weight, 40-52 parts of ABS, 0.5-1 part of stabilizing agent, 1-2 parts of lubricating agent, 2-3 parts of plasticizing agent, 0.5-1 part of anti-ageing agent, 14-18 parts of fillers, 5-6 parts of compatilizer, 1-2 parts of antioxidant, 3-5 parts of fire retardant, 12-15 parts of stainless steel fibers and 8-10 parts of methylvinyl phenyl silicone rubber. The radiation-resistant ABS-based composite shoe material is excellent in radiation resistance and capable of well protecting feet from radiation.
Owner:SUZHOU JINGRO TECH
Nuclear power plant equipment monitoring system based on optical fiber Bragg grating sensing
InactiveCN103151083AGood radiation resistanceSimple resultNuclear energy generationNuclear monitoringCarbon coatingPhysics
A nuclear power plant equipment monitoring system based on optical fiber Bragg grating sensing comprises a light source, optical fiber Bragg gratings and copper / carbon coating optical fiber, wherein the optical fiber Bragg gratings are written on the copper / carbon coating optical fiber at intervals, or the optical fiber Bragg gratings are connected with the copper / carbon coating optical fiber, and the optical fiber Bragg gratings are attached on the surfaces of devices of pipelines, high-temperature and high-pressure containers and the like in a nuclear power plant and connected with an optical circulator through communication optical fiber. Light emitted from the light source is transmitted to the nuclear power plant through the optical circulator and the communication optical fiber, the light reflected by the optical fiber Bragg gratings reaches a photoelectric detector through the optical circulator and processed, then strain size generated by the optical fiber Bragg gratings can be confirmed, and accordingly the health conditions of nuclear power plant equipment are mastered. According to the nuclear power plant equipment monitoring system based on optical fiber Bragg grating sensing, wavelength division multiplexing or time division multiplexing can be adopted as the multiplexing mode, a distributed optical fiber Bragg grating sensor array is established, and the healthy monitoring of high-temperature and high-pressure equipment of the nuclear power plant is achieved.
Owner:XIAN UNIV OF TECH
MOSFET device and preparation method thereof
PendingCN111446287AImprove breakdown voltageImprove reliabilitySemiconductor/solid-state device manufacturingSemiconductor devicesMOSFETSemiconductor
The invention provides an MOSFET device and a preparation method thereof. The MOSFET device comprises a substrate; a first n-type semiconductor layer, a p-type semiconductor layer and a second n-typesemiconductor layer are sequentially stacked on the substrate; the p-type semiconductor layer comprises a first p-type doped region and a second p-type doped region; the first p-type doped region is located on the two sides of the second p-type doped region, and the doping concentration of the second p-type doped region is higher than that of the first p-type doped region; the MOSFET device further comprises a source electrode which is arranged on the side, deviating from the p-type semiconductor layer, of the second n-type semiconductor layer and makes contact with the second n-type semiconductor layer and the second p-type doped region, a gate insulating layer and a gate; the gate insulating layer and the gate are sequentially stacked on the exposed surfaces of the second n-type semiconductor layer, the p-type semiconductor layer and the first n-type semiconductor layer; the MOSFET device further comprises a drain electrode which is arranged on one side, deviating from the first n-type semiconductor layer, of the substrate. A step-doped p region is formed on the p-type semiconductor layer, so that the breakdown voltage of the device is improved. The process is simple, and preparation is convenient.
Owner:SHENZHEN UNIV
Sandwiched parallel-connection PIN-type beta irradiation battery and preparation method thereof
InactiveCN104134480AAvoid damageIncrease working voltageRadiation electrical energyHigh energyElectrical battery
The invention discloses a sandwiched parallel-connection PIN-type beta irradiation battery and a preparation method thereof. The invention mainly aims at solving problems of low energy conversion rate and low output power of current nuclear batteries. The battery comprises two PIN junctions connected in parallel and a beta radioactive source layer, wherein one PIN junction is positioned above the other. The lower PIN junction comprises, from bottom to top, an N-type ohmic contact electrode, an N-type highly doped 4H-SiC substrate, an N-type lowly doped epitaxial layer, a P-type highly doped epitaxial layer and a P-type ohmic contact electrode. The structural distribution of the upper PIN junction is opposite to that of the lower PIN junction. The beta radioactive source layer is sandwiched between the P-type ohmic contact electrodes of the upper and lower PIN junctions, such that full utilization upon high-energy beta particles can be realized. The irradiation battery provided by the invention has the advantages of large contact area between a radioactive source and a semiconductor, high nuclear raw material utilization rate, high energy collection rate, and large battery output voltage. The irradiation battery can perform long-lasting power supply for a small circuit, and can be used in power supply for occasions which need unmanned long-term powering, such as polar regions and deserts.
Owner:XIDIAN UNIV
Autonomous fault tolerance and fault recovery method for on-orbit processing system
PendingCN113918386AAutonomous fault-tolerant implementationGuaranteed uptimeRead-only memoriesRedundant data error correctionChecksumApplication procedure
According to the autonomous fault tolerance and fault recovery method for the on-orbit processing system, the on-orbit processing system can be verified and corrected based on FPGA internal software, and normal operation of a satellite is guaranteed. Checking and correcting are carried out based on FPGA internal software so as to solve the influence of single event upset, including TMR (triple modular redundancy), EDAC (single bit error correction) and program reloading, and the TMR is mainly used for ensuring that system loading can still be realized after single event upset is carried out on a satellite stand-alone burning application file; the EDAC mainly ensures that error correction can still be realized after key data such as all configuration variables are subjected to single event upset in application program loading operation of a single machine, and normal operation is ensured. The method further comprises a program reloading process which mainly ensures that ground on-orbit uploading can still be realized after three application files burnt by a single satellite machine are all subjected to single event upset, and normal operation of the satellite is ensured.
Owner:北京理工雷科电子信息技术有限公司
Diamond semiconductor recoil proton telescope
InactiveCN107015262AStrong radiation resistanceGood radiation resistanceRadiation intensity measurementDiamond detectorNeutron source
The present invention discloses a diamond semiconductor recoil proton telescope. The diamond semiconductor recoil proton telescope comprises a penetrating type detector and a full-depletion type detector; a diamond detector is adopted as the full-depletion type detector; since the diamond detector has strong anti-radiation capacity, when the intensity of neutron flow is high, the diamond detector can have good anti-radiation capacity; and when the energy of neutrons is high, the energy of generated recoil protons is high, and after the recoil protons are deposited on the diamond detector, the energy of the recoil protons can be separated from the energy of backgrounds or other particles, and therefore, the recoil protons can be identified, and thus, background subtraction can be realized, the background subtraction is more thorough, and the accuracy of the measurement of a neutron source can be improved. The diamond semiconductor recoil proton telescope has strong anti-radiation capacity, so that a shielding body is not needed to shield radiation, and therefore, the recoil proton telescope provided by the present invention is of greater structural simplicity compared with a recoil proton telescope with poor anti-radiation performance in the prior art.
Owner:HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
3D type PIN structure alpha irradiation battery and manufacturing method thereof
ActiveCN104051043AReduce lossIncrease collection rateRadiation electrical energyElectrical batteryOhmic contact
The invention discloses a 3D type PIN structure alpha irradiation battery and a manufacturing method of the 3D type PIN structure alpha irradiation battery. The 3D type PIN structure alpha irradiation battery and the manufacturing method mainly solve the problems that an existing alpha irradiation battery is low in energy conversion rate and output power. The manufacturing method includes the implementation steps of sequentially growing an N type lightly-doped 4H-SiC epitaxial layer and a P type highly-doped 4H-SiC epitaxial layer on a washed 4H-SiC substrate in an epitaxial mode, forming ohmic contact electrodes on the non-epitaxial back face of the P type highly-doped epitaxial layer and the non-epitaxial back face of the SiC substrate through deposition, conducting photoetching on the P type ohmic contact electrodes to obtain groove windows, conducting etching to obtain grooves, and placing alpha irradiation sources in the grooves to obtain the 3D type PIN structure alpha irradiation battery. The 3D type PIN structure alpha irradiation battery manufactured according to the method has the advantages that the contact area between the alpha irradiation battery and the alpha irradiation sources is large, the nuclear raw material utilization rate and the energy collection rate are high, and the battery output current and the battery output voltage are large; the 3D type PIN structure alpha irradiation battery can unceasingly supply power for miniature circuits or can supply power on the occasions where long-time power supply is needed but not unmanned.
Owner:XIDIAN UNIV
Light-heat-electricity combination device based on laser energy supply technology
ActiveCN104617864AImprove conversion efficiencyGood radiation resistancePhotovoltaicsPhotovoltaic energy generationElectricityElectromagnetic interference
The invention discloses a light-heat-electricity combination device based on the laser energy supply technology. The device comprises a generating unit, a heat collecting unit and a photoelectric conversion device. The device is characterized in that the generating unit is connected with the heat collecting unit through the photoelectric conversion device. The light-heat-electricity combination device based on the laser energy supply technology solves the problem that a power supply on a high voltage power line cannot continuously work, is low in stability and suffers from electromagnetic interference; a photovoltaic battery is high in conversion efficiency (up to be more than 40%), so that the device is relatively high in temperature characteristic, anti-radiation characteristic and relatively low in generation cost, and as a result, the device can continuously and stably work.
Owner:NANJING UNIV OF POSTS & TELECOMM +1
Parallel type PIN type beta irradiation battery and preparing method thereof
ActiveCN104051042AReduce energy lossIncrease output currentRadiation electrical energyElectrical batteryEngineering
The invention discloses a parallel type PIN type beta irradiation battery and a preparing method thereof to mainly solve the problems that a current nuclear battery is low in energy converting ratio and output power. The parallel type PIN type beta irradiation battery comprises an upper PIN junction, a lower PIN junction and beta irradiation sources, wherein the upper PIN junction and the lower PIN junction are connected in parallel. The lower PIN junction comprises an N type ohmic contact electrode, an N type highly-doped 4H-SiC substrate, an N type lightly-doped epitaxial layer, a P type highly-doped epitaxial layer and a P type ohmic contact electrode from bottom to top in sequence, the top-to-bottom structural distribution of the PIN junction is the same as the bottom-to-top structural distribution of the lower PIN junction, a plurality of grooves are formed in each PIN junction, and the beta irradiation sources are placed in the grooves respectively. The two PIN junctions make contact with each other through the P type ohmic contact electrode, and the upper groove and the lower groove are in mirror symmetry and are communicated with each other. The parallel type PIN type beta irradiation battery has the advantages that the contact area between the irradiation sources and a semiconductor is large, the nuclear raw material utilization rate and the energy collection rate are high, and the output voltage of the battery is large, and the battery can provide power for a miniature circuit continuously or can provide power for polar regions, deserts and other areas.
Owner:XIDIAN UNIV
Moisturizing breathable and anti-radiation hollow mesh fabric
InactiveCN103029336AEnhance layeringGood radiation resistanceTextile decorationMetal layered productsBiomedical engineeringRadiation
The invention relates to a moisturizing breathable and anti-radiation hollow mesh fabric and belongs to the field of textile fabrics. The moisturizing breathable and anti-radiation hollow mesh fabric comprises a fabric body (1), wherein the fabric body (1) is in a mesh shape; the upper surface of the fabric body (1) is provided with an outer layer (2) and an adhesive layer (3); a plurality of bulges (21) are arranged on the outer layer (2); the outer layer (2) and the bulges (21) are connected into a whole; the outer layer (2) is in a fluffy state and is provided with hollow patterns; the outer layer (2) is partially fixed on the fabric body (1) through the adhesive layer (3); the back of the fabric body (1) is provided with a breathable layer (4); an air hole is formed in the breathable layer (4); and a metal coating (5) is adhered between the breathable layer (4) and the fabric body (1). The meshed fabric body is matched with an outer layer provided with the hollow pattern and bulges, and the hierarchy of the hollow meshed fabric is enhanced.
Owner:黄文平
Sandwich parallel epitaxial gan pin type α irradiation cell and preparation method
ActiveCN104051041BAvoid damageIncrease working voltageRadiation electrical energyHigh energyEngineering
Owner:XIDIAN UNIV
High-temperature-resistant and corrosion-resistant rubber tube and preparing method thereof
The invention discloses a high-temperature-resistant and corrosion-resistant rubber tube and a preparing method thereof. Low-density polyethylene, ultra-high molecular weight polyethylene and macromolecular crosslinked polyethylene are used as raw materials, a lining film is prepared from chemical substances which have excellent bonding performance and are obtained after scientific compounding and vulcanization of a rubber pipe, and corona treatment is conducted on the bonding surface of the lining film and the bonding surface of the rubber pipe at the same time; glass fiber reinforced plastic reinforced fibers having the radiation protection performance are combined on the surface layer, so that the surface of the rubber pipe has the excellent radiation protection performance, and potential safety hazards caused by ionization radiation of a delivery pipeline are avoided; and finally the high-temperature-resistant and corrosion-resistant rubber tube which is provided with the firmly-bonded lining film, has the good radiation protection performance and can be used for delivering liquefied petroleum gas (LPG), liquefied natural gas (LNG) and extremely corrosive chemical solvent is prepared. The absorptivity to X rays and gamma rays in nuclear radiation and various neutrons of the hose can reach 97.5%-99.5%, and the binding force of the lining film and the rubber layer reaches 160-180 N / 25mm.
Owner:ZHEJIANG HONGSHENG INTPROP OPERATION CO LTD
High-density fireproof silicone adhesive and preparation process thereof
The invention discloses high-density fireproof silicone adhesive and a preparation process thereof. The silicone adhesive is prepared from the following raw materials in parts by weight: 95-108 partsof base adhesive, 0-30 parts of plasticizer, 50-300 parts of scale-like powder, 0-150 parts of unreinforced powder, 0-100 parts of reinforced filler, 0.01-20 parts of crosslinker, 0-5 parts of couplerand 0.0001-10 parts of catalyst. The high-density fireproof silicone adhesive uses the scale-like powder which has the characteristics of high temperature resistance, acid and alkali resistance and low vapor transmittance and can form a laminated state by different flakes after proper addition amount is achieved, and the aim of retarding flame can be achieved by stopping transmittance of high temperature or flame; under the combined effect of the scale-like powder and other raw materials, the high-density fireproof silicone adhesive has excellent radiation resistance and fireproofing performance without flame-retardant powder or metal powder, and has low production cost and wide application prospect.
Owner:深圳市东信硅材料有限公司
Steel having excellent irradiation resistance and used for steel lining of nuclear power plant, and manufacturing method thereof
The invention relates to steel having excellent irradiation resistance and used for a steel lining of a nuclear power plant. The steel comprises the following components by weight: 0.10 to 0.20% of C,0.20 to 0.45% of Si, 0. 80 to 1.50% of Mn, no more than 0.01% of P, no more than 0.008% of S, 0.02 to 0.05% of Alt, 0.01 to 0.03% of V, no more than 0.006% of N, no less than 2 of Alt / N, no more than1.5 ppm of [H], no more 30 ppm of [O], no more than 0.005% of Cu, no more than 0.005% of As, no more than 0.001% of B, no more than 0.002% of Sb and no more than 0.002% of Sn. A steel plate manufactured by using a method provided by the invention has the advantages of low cost, excellent irradiation resistance, uniform structure, fine crystal grains, few and small inclusions, stable mechanical properties, excellent process performances, and performances meeting the technical requirements of the steel used for the steel lining of the nuclear power plant; and no precious elements like Ni, Cr, Mo, Nb and Ti are added, so production cost is reduced, and excellent resistance to irradiation embrittlement of the steel plate is guaranteed.
Owner:ANGANG STEEL CO LTD
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