Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Sandwiched parallel-connection PIN-type beta irradiation battery and preparation method thereof

A parallel battery technology, applied in the field of microelectronics, can solve the problems of large device leakage current, low energy conversion rate, and easy introduction of surface defects, etc., to achieve the effect of increasing the working voltage, increasing the energy conversion rate, and improving the energy utilization rate

Inactive Publication Date: 2014-11-05
XIDIAN UNIV
View PDF6 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The substrate used in this structure is a P-type highly doped substrate, and the existing process of growing an epitaxial layer on the substrate is immature, so it is easy to introduce surface defects, the leakage current of the device is large, and the energy conversion rate is low.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Sandwiched parallel-connection PIN-type beta irradiation battery and preparation method thereof
  • Sandwiched parallel-connection PIN-type beta irradiation battery and preparation method thereof
  • Sandwiched parallel-connection PIN-type beta irradiation battery and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] Embodiment 1, preparation β radiation source is Ni 63 , A sandwich parallel PIN type β-irradiated cell with a β-radiation source layer thickness of 7 μm.

[0039] Step 1: Make the lower PIN knot.

[0040] (1a) Clean the 4H-SiC sample to remove surface contaminants, such as image 3 (a) shown.

[0041] (1a.1) Set the doping concentration to lx10 18 cm -3 Highly doped n-type 4H-SiC substrate sample in NH 4 OH+H 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove the organic residue on the surface of the sample;

[0042] (1a.2) Use HCl+H to remove the 4H-SiC sample after removing the surface organic residues 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove ionic pollutants.

[0043] (1b) Epitaxial growth of N-type low-doped epitaxial layer, such as image 3 (b) shown.

[0044] A nitrogen-doped N-type doped epitaxial layer is epitaxially grown on the cleaned SiC sample by chemical vapor depos...

Embodiment 2

[0055] Embodiment 2, preparation β radiation source is Ni 63 , Sandwich parallel PIN type β-irradiated cells with a β-radiation source layer thickness of 6 μm.

[0056] Step 1: Make the lower PIN knot.

[0057] 1a) Clean the 4H-SiC sample to remove surface contaminants such as image 3 (a).

[0058] This step is the same as step (1a) of Example 1.

[0059] 1b) Epitaxial growth of N-type low-doped epitaxial layer, such as image 3 (b).

[0060] A nitrogen-doped N-type doped epitaxial layer is epitaxially grown on the cleaned SiC sample by chemical vapor deposition CVD. The process conditions are: epitaxy temperature is 1570°C, pressure is 100mbar, reaction gas is silane and propane, carrier gas is pure hydrogen, magazine source is liquid nitrogen, and the concentration of nitrogen doping is 1.5x10 15 cm -3 , the growth of an N-type low-doped epitaxial layer with a thickness of 25 μm.

[0061] 1c) Epitaxial growth of P-type highly doped epitaxial layer, such as image 3...

Embodiment 3

[0069] Embodiment 3, preparation β radiation source is Pm 147 , Sandwich parallel PIN-type β-irradiated cells with a thickness of β-radiation source layer of 3.5 μm.

[0070] Step A: Make the upper PIN knot.

[0071] (A1) Clean the 4H-SiC sample to remove surface contaminants, such as image 3 (a).

[0072] This step is the same as step (1a) of Example 1.

[0073] (A2) Epitaxially grow a nitrogen-doped N-type low-doped epitaxial layer on the cleaned SiC sample by chemical vapor deposition CVD. The process conditions are as follows: the epitaxy temperature is 1570°C, the pressure is 100mbar, the reaction gas is silane and propane, the carrier gas is pure hydrogen, and the magazine source is liquid nitrogen. A nitrogen doping concentration of 2x10 15 cm -3 , the N-type low-doped epitaxial layer with a thickness of 30 μm such as image 3 (b).

[0074] (A3) A P-type highly doped epitaxial layer doped with aluminum ions is epitaxially grown on the grown N-type low-doped epi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a sandwiched parallel-connection PIN-type beta irradiation battery and a preparation method thereof. The invention mainly aims at solving problems of low energy conversion rate and low output power of current nuclear batteries. The battery comprises two PIN junctions connected in parallel and a beta radioactive source layer, wherein one PIN junction is positioned above the other. The lower PIN junction comprises, from bottom to top, an N-type ohmic contact electrode, an N-type highly doped 4H-SiC substrate, an N-type lowly doped epitaxial layer, a P-type highly doped epitaxial layer and a P-type ohmic contact electrode. The structural distribution of the upper PIN junction is opposite to that of the lower PIN junction. The beta radioactive source layer is sandwiched between the P-type ohmic contact electrodes of the upper and lower PIN junctions, such that full utilization upon high-energy beta particles can be realized. The irradiation battery provided by the invention has the advantages of large contact area between a radioactive source and a semiconductor, high nuclear raw material utilization rate, high energy collection rate, and large battery output voltage. The irradiation battery can perform long-lasting power supply for a small circuit, and can be used in power supply for occasions which need unmanned long-term powering, such as polar regions and deserts.

Description

technical field [0001] The invention belongs to the field of microelectronics, and relates to the structure and preparation method of semiconductor devices, specifically a silicon carbide-based sandwich parallel PIN type β irradiation battery and its preparation method, which can be used in micro-circuits such as micro-nano electromechanical systems and aviation Aerospace, deep sea, polar regions and other occasions that require long-term power supply and are unattended. technical background [0002] With people's demand for low power consumption, long life, high reliability and small size power supply equipment, as well as concerns about nuclear waste disposal, micronuclear batteries have become more and more popular. Due to its outstanding characteristics, micronuclear batteries can be used to solve the long-term power supply problems of micropipe robots, implanted microsystems, wireless sensor node networks, artificial cardiac pacemakers, and portable mobile electronics. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G21H1/06
Inventor 郭辉黄海栗宋庆文张艺蒙张玉明
Owner XIDIAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com