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Diamond semiconductor recoil proton telescope

A technology for recoil protons and semiconductors, which is used in measurement devices, instruments, scientific instruments, etc., can solve the problems of poor radiation resistance and poor background deduction ability, and achieve good radiation resistance, good deduction effect, and improved The effect of precision

Inactive Publication Date: 2017-08-04
HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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  • Abstract
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  • Claims
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Problems solved by technology

[0004] In view of this, the present invention provides a diamond semiconductor recoil proton telescope to solve the problems of poor radiation resistance and poor background subtraction ability of semiconductor recoil proton telescopes in the prior art

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Embodiment Construction

[0023] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0024] The semiconductor recoil proton telescope in the prior art is mainly used for the measurement of neutrons with energy less than 5 MeV, but when it is used for the measurement of neutrons with energy above 5 MeV, it will produce charged particles due to the reaction with Si nuclei, resulting in a strong background that limits its For the measurement of neutrons above 5MeV. In the prior art, silicon semiconductor double-coincidence recoil proton telescope...

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Abstract

The present invention discloses a diamond semiconductor recoil proton telescope. The diamond semiconductor recoil proton telescope comprises a penetrating type detector and a full-depletion type detector; a diamond detector is adopted as the full-depletion type detector; since the diamond detector has strong anti-radiation capacity, when the intensity of neutron flow is high, the diamond detector can have good anti-radiation capacity; and when the energy of neutrons is high, the energy of generated recoil protons is high, and after the recoil protons are deposited on the diamond detector, the energy of the recoil protons can be separated from the energy of backgrounds or other particles, and therefore, the recoil protons can be identified, and thus, background subtraction can be realized, the background subtraction is more thorough, and the accuracy of the measurement of a neutron source can be improved. The diamond semiconductor recoil proton telescope has strong anti-radiation capacity, so that a shielding body is not needed to shield radiation, and therefore, the recoil proton telescope provided by the present invention is of greater structural simplicity compared with a recoil proton telescope with poor anti-radiation performance in the prior art.

Description

technical field [0001] The invention relates to the technical field of neutron source intensity monitoring, in particular to a diamond semiconductor recoil proton telescope. Background technique [0002] By measuring the number of recoil protons is the most widely used method to measure the neutron fluence rate, because 1 H(n,n') 1 The H cross-section calculation and experimental data are quite accurate, and the recoil proton telescope method is the main method for measuring the neutron injection rate of 1MeV-20MeV or even higher energy. [0003] The recoil proton telescopes in the prior art mainly include semiconductor recoil proton telescopes and CsI scintillator recoil proton telescopes. The CsI scintillator recoil proton telescope is suitable for the measurement of the neutron fluence rate above 5MeV. When the neutron flux intensity is high, n and γ screening is required, and the radiation damage is serious. Semiconductor recoil proton telescopes generally include pen...

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Application Information

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IPC IPC(8): G01T1/16G01T1/17G01T1/24
CPCG01T1/1603G01T1/1606G01T1/17G01T1/24
Inventor 吴宜灿刘超李雅男李桃生蒋洁琼
Owner HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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