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3D type PIN structure alpha irradiation battery and manufacturing method thereof

A battery and 3D technology, applied in the field of microelectronics, can solve the problems of large battery leakage current, easy introduction of surface defects, low energy conversion rate, etc., to achieve large band gap, improve energy collection rate, and good radiation resistance Effect

Active Publication Date: 2014-09-17
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The substrate used in this structure is a P-type highly doped SiC substrate, and the existing process of growing an epitaxial layer on the substrate is immature, so it is easy to introduce surface defects, the battery leakage current is large, and the energy conversion rate is low.

Method used

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  • 3D type PIN structure alpha irradiation battery and manufacturing method thereof
  • 3D type PIN structure alpha irradiation battery and manufacturing method thereof
  • 3D type PIN structure alpha irradiation battery and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Embodiment 1, preparation α radiation source is Am 241 , a 3D-type PIN structure α-irradiated battery with two grooves.

[0035] Step 1: Wash the 4H-SiC sample to remove surface contaminants such as image 3 (a) shown.

[0036] (1.1) Set the doping concentration to lx10 18 cm -3 Highly doped n-type 4H-SiC substrate sample in NH 4 OH+H 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove the organic residue on the surface of the sample;

[0037] (1.2) Use HCl+H to remove the 4H-SiC sample after removing the surface organic residue 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove ionic pollutants.

[0038] Step 2: Epitaxial growth of N-type low-doped epitaxial layer, such as image 3 (b) shown.

[0039] A nitrogen-doped N-type doped epitaxial layer is epitaxially grown on the cleaned SiC sample by chemical vapor deposition CVD. The process conditions are as follows: the epitaxy temperature i...

Embodiment 2

[0054] Embodiment 2, preparation α radiation source is Am 241 , a 3D-style PIN-structured α-irradiated battery with five grooves.

[0055] Step 1: Clean the 4H-SiC sample to remove surface contaminants such as image 3 (a).

[0056] This step is the same as Step 1 of Example 1.

[0057] Step 2: Epitaxial growth of N-type low-doped epitaxial layer, such as image 3 (b).

[0058] A nitrogen-doped N-type low-doped epitaxial layer was epitaxially grown on the cleaned SiC sample by chemical vapor deposition CVD. The process conditions are: epitaxy temperature is 1570°C, pressure is 100mbar, reaction gas is silane and propane, carrier gas is pure hydrogen, magazine source is liquid nitrogen, and the concentration of nitrogen doping is 1.5x10 15 cm -3 , the growth of an N-type low-doped epitaxial layer with a thickness of 8 μm.

[0059] Step 3: Epitaxial growth of P-type highly doped epitaxial layer, such as image 3 (c) shown.

[0060] On the grown N-type low-doped epitaxia...

Embodiment 3

[0070] Embodiment 3, preparation α radiation source is Pu 238 , a 3D PIN structure alpha-irradiated cell with 10 grooves.

[0071] Step A: Wash the 4H-SiC sample to remove surface contaminants such as image 3 (a).

[0072] This step is the same as Step 1 of Example 1.

[0073] Step B: epitaxially growing a nitrogen-doped N-type doped epitaxial layer on the cleaned SiC sample by chemical vapor deposition CVD. The process conditions are as follows: the epitaxy temperature is 1570°C, the pressure is 100mbar, the reaction gas is silane and propane, the carrier gas is pure hydrogen, and the magazine source is liquid nitrogen. A nitrogen doping concentration of 2x10 15 cm -3 , the N-type low-doped epitaxial layer with a thickness of 10 μm such as image 3 (b).

[0074] Step C: epitaxially grow a P-type highly doped epitaxial layer doped with aluminum ions by chemical vapor deposition CVD on the epitaxially grown N-type low-doped epitaxial layer, and the process conditions ar...

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Abstract

The invention discloses a 3D type PIN structure alpha irradiation battery and a manufacturing method of the 3D type PIN structure alpha irradiation battery. The 3D type PIN structure alpha irradiation battery and the manufacturing method mainly solve the problems that an existing alpha irradiation battery is low in energy conversion rate and output power. The manufacturing method includes the implementation steps of sequentially growing an N type lightly-doped 4H-SiC epitaxial layer and a P type highly-doped 4H-SiC epitaxial layer on a washed 4H-SiC substrate in an epitaxial mode, forming ohmic contact electrodes on the non-epitaxial back face of the P type highly-doped epitaxial layer and the non-epitaxial back face of the SiC substrate through deposition, conducting photoetching on the P type ohmic contact electrodes to obtain groove windows, conducting etching to obtain grooves, and placing alpha irradiation sources in the grooves to obtain the 3D type PIN structure alpha irradiation battery. The 3D type PIN structure alpha irradiation battery manufactured according to the method has the advantages that the contact area between the alpha irradiation battery and the alpha irradiation sources is large, the nuclear raw material utilization rate and the energy collection rate are high, and the battery output current and the battery output voltage are large; the 3D type PIN structure alpha irradiation battery can unceasingly supply power for miniature circuits or can supply power on the occasions where long-time power supply is needed but not unmanned.

Description

technical field [0001] The invention belongs to the field of microelectronics, and relates to a semiconductor device structure and a preparation method, in particular to a silicon carbide-based PIN type α irradiation battery and a preparation method thereof, which can be used in micro-circuits such as micro-nano electromechanical systems and aerospace, deep-sea, etc. , polar regions and other occasions that require long-term power supply and are unattended. technical background [0002] With people's demand for low power consumption, long life, high reliability and small size power supply equipment, as well as concerns about nuclear waste disposal, micronuclear batteries have become more and more popular. Due to its outstanding characteristics, micronuclear batteries can be used to solve the long-term power supply problems of micropipe robots, implanted microsystems, wireless sensor node networks, artificial cardiac pacemakers, and portable mobile electronics. And it is exp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G21H1/06
Inventor 郭辉赵亚秋王悦湖宋庆文张玉明
Owner XIDIAN UNIV
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