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AlGaN/GaN high-electron-mobility transistor and manufacturing method thereof

A technology with high electron mobility and fabrication method, which is applied in the structural fields of high-speed devices and high-frequency devices, semiconductor devices, and short-channel AlGaN/GaN high electron mobility transistors, and can solve problems affecting Schottky gate characteristics, etc. Achieve the effect of improving radiation resistance, increasing electrical conductivity, and reducing the length of the channel

Active Publication Date: 2010-10-06
云南凝慧电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, many of its researchers found that the high-temperature annealing of the ohmic contact would seriously affect the characteristics of the Schottky gate, and even cause the gate metal to eventually form an ohmic contact, resulting in a complete failure of the device process.

Method used

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  • AlGaN/GaN high-electron-mobility transistor and manufacturing method thereof
  • AlGaN/GaN high-electron-mobility transistor and manufacturing method thereof
  • AlGaN/GaN high-electron-mobility transistor and manufacturing method thereof

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Experimental program
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Effect test

Embodiment 1

[0030] Embodiment 1, the making of device of the present invention, comprises the following steps:

[0031] Step 1. Epitaxial material growth.

[0032] refer to figure 1 and figure 2 , the specific implementation of this step is as follows:

[0033] (101) On the sapphire substrate substrate, utilize the MOCVD process to grow a GaN buffer layer;

[0034] (102) growing an intrinsic GaN layer on the GaN buffer layer;

[0035] (103) On the intrinsic GaN layer, a 20nm thick Al 0.3 Ga 0.7 N layer;

[0036] (104) in Al 0.3 Ga 0.7 On the N layer, a 2nm thick GaN capping layer is grown.

[0037] Step 2. Gate electrode fabrication.

[0038] refer to figure 1 and image 3 , the specific implementation of this step is as follows:

[0039] (201) Photoetching a gate electrode pattern on the surface of the grown GaN material. In order to peel off the metal better, firstly, the adhesive is shaken on the sample at a speed of 8000 rpm for 30 seconds, and baked in a high-temperature...

Embodiment 2

[0054] Embodiment 2, the making of device of the present invention, comprises the following steps:

[0055] Step 1. Epitaxial material growth.

[0056] refer to figure 1 and figure 2 , the specific implementation of this step is as follows:

[0057] (101) On the sapphire substrate substrate, utilize the MOCVD process to grow a GaN buffer layer;

[0058] (102) growing an intrinsic GaN layer on the GaN buffer layer;

[0059] (103) On the intrinsic GaN layer, a 20nm thick Al 0.3 Ga 0.7 N layer;

[0060] (104) in Al 0.3 Ga 0.7 On the N layer, a 2nm thick GaN capping layer is grown.

[0061] Step 2. Make the gate electrode.

[0062] refer to figure 1 and image 3 , the specific implementation of this step is as follows:

[0063] (201) Photoetching a gate electrode pattern on the surface of the grown GaN material. In order to peel off the metal better, firstly, the adhesive is shaken on the sample at a speed of 8000 rpm for 30 seconds, and baked in a high-temperature ...

Embodiment 3

[0078] Embodiment 3, the making of device of the present invention, comprises the following steps:

[0079] Step 1. Epitaxial material growth.

[0080] refer to figure 1 and figure 2 , the specific implementation of this step is as follows:

[0081] (101) On the sapphire substrate substrate, utilize the MOCVD process to grow a GaN buffer layer;

[0082] (102) growing an intrinsic GaN layer on the GaN buffer layer;

[0083] (103) On the intrinsic GaN layer, a 20nm thick Al 0.3 Ga 0.7 N layer;

[0084] (104) in Al 0.3 Ga 0.7 On the N layer, a 2nm thick GaN capping layer is grown.

[0085] Step 2. Gate electrode fabrication.

[0086] refer to figure 1 and image 3 , the specific implementation of this step is as follows:

[0087] (201) Photoetching a gate electrode pattern on the surface of the grown GaN material. In order to peel off the metal better, firstly, the adhesive is shaken on the sample at a speed of 8000 rpm for 30 seconds, and baked in a high-temperatu...

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Abstract

The invention discloses an AlGaN / GaN high-electron-mobility transistor and a manufacturing method thereof, which relate to the technical field of microelectronics and mainly solve the problems of low working frequency and poor anti-irradiation performance of the transistor. The transistor sequentially comprises a GaN buffer layer, an intrinsic GaN layer, an Al0.3Ga0.7N layer, a GaN capping layer, a source electrode, a drain electrode and a grid electrode according to a growth sequence, wherein transparent ZnO is adopted by the grid electrode, an Ni metal bonding layer is evaporated below the ZnO grid electrode, and SiN protection layers are arranged at both sides. Al2O3 is doped in the ZnO grid electrode, and the length of the ZnO grid electrode is equal to the distance between the source electrode and the drain electrode. The manufacturing process of the transistor sequentially comprises the following steps of: firstly, growing an epitaxial material; then manufacturing the ZnO grid electrode; and finally, manufacturing the source electrode and the drain electrode at both sides of the ZnO grid electrode by utilizing a self-aligning method. The AlGaN / GaN high-electron-mobility transistor has the advantages of high frequency characteristic and good anti-irradiation characteristic and can be used as an electronic component in high-frequency and high-speed circuits.

Description

technical field [0001] The invention belongs to the field of microelectronics technology, and relates to semiconductor devices, specifically a structure and a realization method of a short-channel AlGaN / GaN high electron mobility transistor using transparent material ZnO as a gate and source-drain self-alignment technology, mainly Used as high-speed devices and high-frequency devices. Background technique [0002] Compared with the parameters of other semiconductor materials, GaN material has obvious advantages. Its forbidden band width is the widest, its saturation electron velocity is also better than other semiconductor materials, and it has a large breakdown field strength and high thermal conductivity. The characteristics of charge carrier velocity field are the basis of device operation. High saturation velocity leads to large current and high frequency. High breakdown field strength is crucial for high-power applications of devices. At the same time, due to the inhere...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/778H01L29/423H01L21/335H01L21/28
Inventor 马晓华曹艳荣郝跃高海霞王冲杨凌
Owner 云南凝慧电子科技有限公司
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