134results about How to "Few grain boundaries" patented technology

The invention relates to the technical field of polysilicon ingot furnace designing and manufacturing, and aims to provide a follow-up heat insulation ring thermal field structure for the vertical oriented growth of polysilicon. The thermal field structure comprises a furnace chamber with a side surface enclosed heat insulation cage body, a crucible and a thermal field are arranged in the heat insulation cage body, and the upper end of the heat insulation cage body is connected with a lifting device; the upper part and the lower part of the heat insulation cage body are respectively provided with a top heat insulation board and a lower heat insulation body, wherein the top heat insulation board is fixedly suspended on an electrode, the lower heat insulation board and a heat exchange are fixed on a support column, the top heat insulation board and the upper end of the heat insulation cage body are movably connected, and the lower heat insulation board and the lower end of the heat insulation cage body are movably connected; and a circular follow-up heat insulation ring is fixed in the heat insulation cage body through a plurality of connecting devices. The follow-up heat insulation ring thermal field structure for the vertical oriented growth of polysilicon has reasonable design, can increase the grain size of polysilicon, reduce grain boundary and improve the verticality of the growing direction of polysilicon so as to improve the quality of polysilicon ingots, and simultaneously the follow-up heat insulation ring also plays the role of energy consumption reduction.

The invention discloses a metal-ion-doped perovskite thin film, a preparation method and an application therefor. The preparation method for the metal-ion-doped perovskite thin film comprises the specific steps of dissolving metal powder into an HX solution to form the HX solution containing metal ions, wherein X is Cl, Br or I; enabling the HX solution containing metal ions to be mixed with an methylamine solution, and drying to prepare metal-ion-doped MAX powder; enabling the metal-ion-doped MAX powder to be mixed with the a lead salt, and dissolving the mixture into dimethylformamide to prepare a perovskite precursor liquid, wherein the lead salt is PbBr<2>, PbI<2> or PbCl<2>; and preparing the metal-ion-doped perovskite thin film from the perovskite precursor liquid through a rotary coating process. The metal-ion-doped perovskite thin film is prepared through a liquid phase one-step method; the cover degree of the prepared perovskite thin film is greatly improved; and the requirement of a perovskite solar cell on the high quality of the perovskite thin film can be fully satisfied.

The invention discloses a preparation method of a three-dimensional dendritic TiO2 array with rapid electronic transmission performance. The preparation method comprises the steps as follows: 1), a one-dimensional nanometer TiO2 rod array with rapid electronic transmission performance is grown on the surface of a conductive substrate deposited with a TiO2 crystal seed layer with a hydrothermal method; 2), the one-dimensional nanometer TiO2 rod array obtained in the step 1) is subjected to surface treatment, and a three-dimensional dendritic structure is grown on a no-seed layer in an epitaxial manner with a water-bath method; and 3), an obtained sample with the three-dimensional dendritic structure is subjected to oxygen plasma cleaning and oxygen atmosphere sintering treatment, so that a three-dimensional dendritic TiO2 array nano-structure is obtained. According to the preparation method, the technological operation is simple, the cost is low, the controllability is high, grain boundaries and defects of the obtained TiO2 array are few, high electrical transmission rate and large specific surface area are provided, the TiO2 array can be used for a photo-anode of an photoelectric device, the device performance is improved greatly, and a good application prospect is provided.

The invention relates to the field of microelectronic packaging material or ceramic material, in particular to a method for continuous low temperature sintering of high thermal coefficient AIN ceramics and a product thereof; the AIN ceramics is prepared from AIN powder and additive by sintering; the AIN powder has an average grain diameter of 1.0-2.0mum and an oxygen content of being equal to or less than 1.0%, the additive is composed of nano AIN powder, sintering auxiliary agent and rare earth metal oxide; wherein the sintering auxiliary agent is selected from CaCO3 and LiCO3, the rare earth metal oxide is selected from Y2O3, Sm2O3, Dy2O3, Nd2O3, Ho2O3 and Er2O3, wherein the content of the sintering auxiliary agent is 1-2wt%, the use amount of the nano AIN powder accounts for 5-10% of the total weight, the content of the rare earth oxide is 1-3wt%. The invention has the beneficial effects that superfine aluminum nitride powder and sintering aid are used to improve sintering property of the aluminium nitride ceramics, lower sintering temperature of the AIN ceramics, so that densification sintering can be carried out with the range of 1450-1600 DEG C and thermal conductivity of the AIN ceramics can reach 170-220W / m.K; in addition, the invention has the advantages of capability of sintering in a continuous hydrogen and nitrogen atmosphere furnace, improved production efficiency, low energy consumption, large output and low cost.

The invention provides a preparation method of lithium yttrium halide and application thereof in a solid electrolyte and a battery. The preparation method of the lithium yttrium halide comprises the following steps: (1) supplying yttrium halide salt and lithium salt to a ball mill tank for mechanical synthesis; (2) annealing a mechanically synthesized product under the protection of inert gas to obtain the lithium yttrium halide with a chemical formula of Li3YAxB6-x, wherein A is Cl<-> and / or Br<->, and B is selected from at least one of I<->, F<->, BF<4->, PF<6->, BOB<->, TFSI<-> and FSI<->;x is more than 0 and less than or equal to 6. The method can be carried out under normal pressure, and the raw materials are low in cost; the prepared Li3YCl6 is high in thermal stability and high incrystallinity, and has relatively high electrical conductivity at normal temperature.

The invention discloses a method for using a chemical vapor deposition method to prepare a perovskite film solar cell. The method comprises the following steps of: (1) pre-processing a substrate; (2) coating a TiO2 compact layer on the surface of the substrate after the pre-processing; (3) using a one-step method to prepare a perovskite material layer; (4) carrying out spin coating on the perovskite material layer so as to prepare a Spiro-OMeTAD solar cell cavity transmission layer; and (5) drying a device prepared by the steps (1)-(4), completing cathode metal electrode deposition, and obtaining the perovskite film solar cell. According to the invention, a simple gas phase transmission method is utilized, the simple one-step chemical vapor deposition (CVD) method is developed, the halide perovskite solar cell is prepared without depending on high vacuum equipment, and the energy conversion efficiency exceeds 11%.

The invention provides a solid electrolyte membrane and a preparation method and a secondary cell and a preparation method thereof, which relate to the technical field of the secondary cell. The preparation method of the solid electrolyte membrane comprises the following steps: laser is used for heating a dry powder layer of a solid electrolyte substance, after the dry powder layer of the solid electrolyte substance is fusion and solidified, the solid electrolyte membrane is obtained. The method can alleviate the technical problem that a binder is added while the solid electrolyte is prepared,the apertures are multiple, and the electrical property of the cell is decreased in the prior art, and a purpose of increasing the electricity performance of the cell can be achieved.

The invention discloses a high-performance perovskite solar cell which comprises a substrate, an electronic transmission layer, an interface modification layer, a perovskite absorption layer, a hole transport layer and an counter electrode, wherein the interface modification layer is made of the modification material of cesium salt; and the perovskite light absorption layer is prepared by a gas phase auxiliary solution method. The invention also discloses a preparation method for the high-performance perovskite solar cell. The solar cell has the advantages that photoelectric conversion efficiency is high; stability is high; the preparation method is simple; cost is low; and large-scale production can be carried out.

The invention discloses an efficient and stable perovskite solar battery, which is formed by transparent conductive glass, an electron transfer layer, a mesoporous layer, a perovskite layer, a hole transfer layer and a back electrode which are laminated in sequence. During preparation of the perovskite layer, a certain quantity of terephthalic acid (TPA) additives are added to a precursor liquid of a traditional organic and inorganic metal halide perovskite, so that growth kinetics of a perovskite crystal changes, an obtained perovskite crystal boundary is filled up, and thus joined large-sized perovskite crystal particles are formed. According to the perovskite solar battery prepared by the method, compared with an additive-free perovskite solar battery, annihilation of photoproduction excitons at the crystal boundary is reduced, so that the photoelectric conversion efficiency is obviously increased. In addition, the perovskite crystal boundary is reduced, moisture, oxygen and the like are difficult to enter from the crystal boundary to corrode the perovskite layer, thereby enabling the stability of the whole battery to be obviously better.

A fully inorganic perovskite solar cell and a preparation method thereof are provided. The method comprises the steps of: 1. adding CsI into DMSO, dissolving completely, adding isopropanol, precipitating, filtering, and vacuum drying to obtain treated CsI; 2, dissolving PbI2 (DMSO), PbBr2 (DMSO) and treated CsI, according to the molar ratio of the corresponding elements of CsPbI2Br, to prepare a precursor solution; 3, preparing an electron transport layer on the substrate; spin-coating the solution on the surface of the electron transport layer, and performing annealing at the temperature of 30-40 DEG C and 120-200 DEG C for 2-5 min, so that thin film is crystallized to obtain a fully inorganic perovskite light absorbing lay; 4, sequentially preparing a hole transport layer and a gold electrode layer on the surface of the absorption layer to obtain a fully inorganic perovskite solar cell. The perovskite battery has good stability of water and oxygen, good film-forming property, simplemethod and strong repeatability.

The invention provides a quaternary positive electrode material precursor. The quaternary positive electrode material precursor is of a core-shell structure, the material formula of a core is Ni<1-x-y-z>Co<x>Al<y>Mn<z>CO3, the material formula of the core is Ni<1-r-s-t>Co<r>Al<s>Mn<t>(OH)2, wherein (1-x-y-z) is a numeral value between 0.80 and 0.96, x is larger than 0, y is a numeral value between0.01 and 0.10, z is a numeral value between 0.01 and 0.10, (1-r-s-t) is a numeral value between 0.34 and 0.70, r is larger than 0, s is a numeral value between 0.20 and 0.40, and t a numeral value between 0.20 and 0.40. The quaternary positive electrode material is stable in structure, high in safety, long in cycle lifetime and good in thermal stability.

The invention discloses a low-temperature polycrystalline silicon film, a preparation method thereof, a thin film transistor and a display panel. The preparation method of the low-temperature polycrystalline silicon film comprises the steps that multiple non-crystalline silicon layers having different membranous parameters deposit, wherein the membranous parameters include refractive index parameters and / or heat conductivity coefficient parameters; dehydrogenation treatment is conducted on the multiple non-crystalline silicon layers having different membranous parameters; crystallization treatment is conducted on the non-crystalline silicon layers subjected to the dehydrogenation treatment to form the low-temperature polycrystalline silicon film. According to the embodiment, by depositing the multiple non-crystalline silicon layers having different membranous parameters different in non-crystalline silicon refraction index and heat conductivity coefficient, formation of large-sized crystalline grains in the crystallization process is promoted, active layer low-temperature polycrystalline silicon has fewer crystal boundaries, leaked current during connection of the thin film transistor can be decreased, and the electrical performance of the thin film transistor is improved.

The invention provides a method for preparing a molybdenum disulfide film with consistent grain orientation height on a sapphire substrate. The method comprises the following steps of: adopting c-plane sapphire as the substrate, and carrying out high-temperature annealing treatment on the substrate before growth; putting the sapphire substrate into a first quartz boat, mixing and grinding MoO3 and NaCl, weighing a mixture and putting the mixture into a second quartz boat, and putting S powder into a third quartz boat; and putting the three quartz boats into a chemical vapor deposition system cavity, introducing carrier gas, controlling the temperature in the cavity and carrying out a chemical vapor deposition process, and thus obtaining the molybdenum disulfide film with the consistent grain orientation height on the sapphire substrate. The method solves the problem of random grain orientation of molybdenum disulfide prepared by a chemical vapor deposition method, realizes preparation of the molybdenum disulfide film with the consistent grain orientation height, has the advantages of simple process, low cost and the like, and is suitable for industrial batch production.

The invention discloses a molybdenum carbide modified tubular carbon nitride photocatalytic material and a preparation method and application thereof. The molybdenum carbide modified tubular carbon nitride photocatalytic material comprises molybdenum carbide and tubular carbon nitride, wherein the surface of the tubular carbon nitride is modified with the molybdenum carbide. The preparation methodcomprises the steps: suspending the tubular carbon nitride in methanol, so as to obtain a suspension; dispersing the molybdenum carbide in the suspension, carrying out intensive mixing, and carryingout drying, thereby obtaining the molybdenum carbide modified tubular carbon nitride photocatalytic material. According to the molybdenum carbide modified tubular carbon nitride photocatalytic material disclosed by the invention, an energy band structure of the carbon nitride is improved to form molybdenum carbide / carbon nitride heterojunction, so that the effective separation of photoproduction electron-hole pairs is achieved, the utilization efficiency of photoproduction electron-holes is increased, and the effect of photocatalytic degradation is promoted; the molybdenum carbide modified tubular carbon nitride photocatalytic material can be applied to degradation of antibiotics or dyes in wastewater.

The invention discloses a preparation method of a perovskite thin film and a preparation method of a solar cell thereof. Includes depositing BX2 in perovskite ABX3 raw material on substrate by vacuumthermal evaporation, and forming BX2 thin film on substrate; Flashing the AX salt in the perovskite ABX3 raw material on the BX2 film to obtain a perovskite film covered with excessive AX salt on thesurface; The excess AX salt was washed to give a thickness of 80- 500nm perovskite film. BX2 is evaporate first, Then the excess AX is flashed, and finally the excess AX is washed away to obtain uniform and compact perovskite thin film. The method makes the preparation of perovskite thin film layer more controllable, simple in operation and good in repeatability, solves the problem of complex control of ABX3 vapor deposition in the prior art, thereby facilitating the large-scale production of perovskite thin film.

The present invention provides a positive electrode material precursor which is a core-shell structure. The material chemical formula of the core is Ni1-x-yCoxAly(OH)2. The material chemical formula of the shell is Ni1-r-s-tCorAlsMntCO3, wherein 1-x-y is a value in a range of 0.80 to 0.96, x is greater than 0, y is a value in a range of 0.01 to 0.10, 1-r-s-t is a value in a range of 0.34 to 0.70,r is greater than 0, s is a value in a range of 0.20 to 0.40, and t is a value in a range of 0.20 to 0.40. The positive electrode material of the invention is stable in structure, high in safety performance, long in cycle life and good in thermal stability.

The invention discloses a corrosion-resistant ceramic roller. The ceramic roller is mainly prepared from kaolin, refractory clay, alumina, a sintering aid and other raw materials. The invention also discloses a preparation method of the corrosion-resistant ceramic roller. The prepared corrosion-resistant ceramic roller is resistant to rapid cooling and rapid heating and does not crack after beingcycled at 1350 DEG C-room temperature 2 times or more, has normal temperature bending strength being higher than or equal to 80 MPa, high temperature bending strength being higher than or equal to 80MPa at 1350 DEG C, water absorption being lower than or equal to 0.5% and roller mass erosion rate being lower than or equal to 1% , has significant corrosion resistance, and can be widely used in production of ceramic products and magnetic materials.

The invention relates to the technical field of lithium ion battery materials, in particular to a ternary precursor and a preparation method and application thereof. The ternary precursor is of a core-shell structure, the inner core is of a loose and porous compact orange slice type structure, the shell is of a center epitaxial amplification shape, and the fan-shaped central angle of the orange slice type structure is 10-30 degrees; the core of the obtained ternary precursor particle has a loose and porous structure, so that the internal stress is reduced in the charging and discharging process of a lithium battery, and microcracks of the particle are avoided; the shell is compact and is of an orange slice structure, lithium salt can permeate into the core of the ternary precursor more easily in the sintering process of preparing the positive electrode material, the diffusion mass transfer resistance is smaller, the sintering temperature is lower, the dynamic performance is better, and use is more facilitated; the material is large in tap density, good in sphericity degree, uniform in primary particle distribution and narrow in particle size distribution, and a good premise and foundation are provided for subsequent preparation of high-quality positive electrode materials.

The invention discloses a film for a Ta-Al-N dispersing obstructing layer used for interconnection of copper, which is characterized in that the weight percentage of the film is 1.5 to 7.8 percent of Al, 8.4 to 11.5 percent of N and the rest is Ta; the film is manufactured by using a multi-target magnetic control sputtering method. The invention also discloses a technique for preparing the film for the Ta-Al-N dispersing obstructing layer, in particular preparation by adopting the magnetic control sputtering method. The obstructing characteristics of the Ta-Al-N film can not lose effect until being annealed for 5 minutes under the temperature of 900 DEG C. compared with the traditional Ta-N or Ta / Ta-N obstructing layer, the Ta-Al-N film of the invention can effectively improve the obstructing property thereof simultaneously when maintaining the excellent adhesive property and low resistance rate of the traditional material of the obstructing layer as a few amount of Al is added; simultaneously as the existence of the few amount of Al, an ultra-thin alumina layer is easy to be formed on the film surface, thus effectively avoiding the obstructing layer from being oxidized.

The invention belongs to the field of solar cells, and particularly discloses a non-halogen lead-doped perovskite thin film and a preparation method and application thereof. The perovskite thin film is prepared by adding lead oxalate into a perovskite precursor solution. According to the preparation method, a trace amount of lead oxalate is added into a perovskite precursor solution, and a perovskite thin film layer in a solar cell is obtained through spin coating by a low-temperature solution treatment method, so that the crystallization process of the perovskite material is slowed down, anda thin film with larger crystal grains and fewer crystal boundaries is obtained. The preparation process is simple, and the production cost is saved. The crystallization condition of the perovskite thin film can be well improved, defects are reduced, carrier recombination is inhibited, and the performance of the device is improved. Meanwhile, an indoor perovskite solar cell obtained by the methodhas a great prospect in the aspect of indoor low-illumination power supply in the future.

The invention discloses a perovskite solar cell. The structure of the perovskite solar cell comprises glass, a positive electrode ITO, a positive electrode modification layer nickel oxide, an active layer FAPb<0.75>Sn<0.25>I<3>, a first negative electrode modification layer PC60BM, a second negative electrode modification layer BCP and negative electrode silver from bottom to top. The grain of perovskite on the nickel oxide is larger than that of traditional PEDOT:PSS, the charge mobility is higher, higher short-circuit current and external quantum efficiency can be generated, and larger photoelectric conversion efficiency is further obtained.

The invention provides a linear hierarchy lithium titanate material, as well as preparation and application thereof. The lithium titanate material has a spinel crystal phase, or a monoclinic crystal phase or a composite crystal phase of spinel and monoclinic crystal phases, wherein the lithium titanate material is mainly formed by a linear hierarchy structure which has a draw ratio of more than 10; and the surface of the lithium titanate material with the linear hierarchy structure is formed by nanosheets. According to the linear hierarchy lithium titanate material, the long axis of the linearstructure is favorable to effective mobility of electrons, the flaky hierarchy structure is favorable to the process of quickly embedding in and out lithium ions, sodium ions or potassium ions, a large specific surface area is favorable to the contact area of electrolyte and electrode, the current density is reduced, and the material has relatively good battery quick charge and discharge performance.

The invention relates to the field of solar cells, specifically, relates to an inorganic perovskite solar cell based on an ordered SnO2 nanorod array and a preparation method of inorganic perovskite solar cell. The inorganic perovskite solar cell comprises a conductive substrate, a SnO2 seed crystal layer deposited on the surface of the conductive substrate, a SnO2 seed crystal layer, a SnO2 nanorod array growing on the surface of the SnO2 seed crystal layer, an inorganic perovskite layer deposited in gaps of SnO2 nanorods and on the surfaces of the SnO2 nanorods, a hole transport layer deposited on the surface of the inorganic perovskite layer, and an Au electrode layer deposited on the surface of the hole transport layer. The inorganic perovskite solar cell provided by the invention hasthe advantages of fast charge transmission, high charge extraction efficiency, high photoelectric conversion efficiency, good device stability and the like. The preparation method is simple and convenient to operate, is low in cost and wide in application range, and the prepared solar cell is stable and efficient.

The invention provides an organic field effect transistor which uses a compound shown in a formula I as described in the specifications as an organic semiconductor layer, and a manufacturing method thereof and applications thereof. In the formula I, R1 and R2 can be the same or different and selected from at least one of hydrogen, substituted or unsubstituted C1-C50 alkyl, and substituted or unsubstituted C6-C50 aryl, and X is C=C or C-C triple bond. The organic field effect transistor has excellent device stability, the sensing response difference for incident lights of different wavelengths is significant, an extremely sensitive sensing response to an UVA with the light intensity to be only 37muWcm<-2> and the wavelength to be 365 to 420nm, light responsibility (R) exceeds 6000A / W, photosensitivity (P) can maximally reach 6.75*105, and thus the organic field effect transistor can be used for manufacturing an ultraviolet sensor, photosensitivity of the manufactured ultraviolet sensor in UVA is basically not changed along with changes of the light intensity, and great advantages are provided in the aspect of incident light distribution region reverse detection.

The invention relates to a lithium battery electrolyte, and especially relates to a dry preparation process of a solid electrolyte. The dry preparation process comprises the following steps: mixing lanthanum oxide, zirconium oxide, a lithium source and a doping raw material, and uniformly grinding to obtain a mixture; presintering the mixture, and cooling to room temperature; carrying out secondary grinding on the pre-sintered mixture to obtain mother powder; tabletting the mother powder to obtain a biscuit; and carrying out secondary sintering on the biscuit to obtain the solid electrolyte. Compared with the prior art, the process has the advantages that the magnesium oxide crucible is adopted for secondary sintering, and short-time sintering is carried out at high temperature, so that the volatilization of lithium in the high-temperature process can be effectively reduced, and the formation of secondary phases such as lanthanum zirconate and the like is avoided. The LLZO prepared by the process has the characteristics of higher density, almost no grain boundary and the like, and almost no lithium oxide is enriched at the grain boundary, so that the LLZO prepared by the process has higher air stability.

The invention provides a linear porous lithium titanate material and preparation and product thereof. The linear porous lithium titanate material is characterized in that the crystal phase is spinel lithium titanate; the lithium titanate material is of a linear structure; the length to diameter ratio of the linear structure is greater than 10; the linear lithium titanate material is of a porous structure; the structure of the linear porous lithium titanate material consists of a plurality of particles; each particle has the fixed growth direction. The linear porous lithium titanate material has the advantages that the long axis of the structure is suitable for the effective transfer of electrons; the porous structure is suitable for the quick embedding-in and embedding-out process of lithium ions, sodium ions or potassium ions; the large specific surface area is suitable for the contact area between an electrolyte and an electrode, so that the current density is reduced, and the betterbattery quick charge and discharge property is realized.

The invention discloses a composite ceramic material and a rice cooker liner prepared from the same. The composite ceramic material is prepared from the following raw materials in parts by weight: 50-70 parts of aluminum nitride, 1-2 parts of Y2O3, 2-3 parts of La2O3, 10-15 parts of SiO2, 10-20 parts of B2O3 and 1-1.5 parts of nanometer TiO2. The rice cooker liner is prepared by the following steps: 1) weighing all the raw materials according to the weight in a formula; and 2) uniformly mixing the raw materials by a mixer, filling a model with the mixture, melting the mixture in a high-temperature frit furnace with the temperature of 1400-1500 DEG C, and pouring the mixture into a die for molding to obtain a ceramic liner. By using the composite ceramic material, the heat conductivity of the aluminum nitride ceramic liner can be remarkably improved, and the energy consumption can be greatly reduced.