Patents
Literature
Hiro is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
Hiro

134results about How to "Few grain boundaries" patented technology

Follow-up heat insulation ring thermal field structure for vertical oriented growth of polysilicon

InactiveCN101775641ACrystal solidification process controlImprove temperature gradient distributionBy pulling from meltManufacturing technologyThermal insulation
The invention relates to the technical field of polysilicon ingot furnace designing and manufacturing, and aims to provide a follow-up heat insulation ring thermal field structure for the vertical oriented growth of polysilicon. The thermal field structure comprises a furnace chamber with a side surface enclosed heat insulation cage body, a crucible and a thermal field are arranged in the heat insulation cage body, and the upper end of the heat insulation cage body is connected with a lifting device; the upper part and the lower part of the heat insulation cage body are respectively provided with a top heat insulation board and a lower heat insulation body, wherein the top heat insulation board is fixedly suspended on an electrode, the lower heat insulation board and a heat exchange are fixed on a support column, the top heat insulation board and the upper end of the heat insulation cage body are movably connected, and the lower heat insulation board and the lower end of the heat insulation cage body are movably connected; and a circular follow-up heat insulation ring is fixed in the heat insulation cage body through a plurality of connecting devices. The follow-up heat insulation ring thermal field structure for the vertical oriented growth of polysilicon has reasonable design, can increase the grain size of polysilicon, reduce grain boundary and improve the verticality of the growing direction of polysilicon so as to improve the quality of polysilicon ingots, and simultaneously the follow-up heat insulation ring also plays the role of energy consumption reduction.
Owner:NINGBO JINGYUAN SOLAR ENERGY +1

Metal-ion-doped perovskite thin film, preparation method and application therefor

The invention discloses a metal-ion-doped perovskite thin film, a preparation method and an application therefor. The preparation method for the metal-ion-doped perovskite thin film comprises the specific steps of dissolving metal powder into an HX solution to form the HX solution containing metal ions, wherein X is Cl, Br or I; enabling the HX solution containing metal ions to be mixed with an methylamine solution, and drying to prepare metal-ion-doped MAX powder; enabling the metal-ion-doped MAX powder to be mixed with the a lead salt, and dissolving the mixture into dimethylformamide to prepare a perovskite precursor liquid, wherein the lead salt is PbBr<2>, PbI<2> or PbCl<2>; and preparing the metal-ion-doped perovskite thin film from the perovskite precursor liquid through a rotary coating process. The metal-ion-doped perovskite thin film is prepared through a liquid phase one-step method; the cover degree of the prepared perovskite thin film is greatly improved; and the requirement of a perovskite solar cell on the high quality of the perovskite thin film can be fully satisfied.
Owner:HEBEI UNIVERSITY

Preparation method of three-dimensional dendritic TiO2 (titanium dioxide) array with rapid electronic transmission performance

The invention discloses a preparation method of a three-dimensional dendritic TiO2 array with rapid electronic transmission performance. The preparation method comprises the steps as follows: 1), a one-dimensional nanometer TiO2 rod array with rapid electronic transmission performance is grown on the surface of a conductive substrate deposited with a TiO2 crystal seed layer with a hydrothermal method; 2), the one-dimensional nanometer TiO2 rod array obtained in the step 1) is subjected to surface treatment, and a three-dimensional dendritic structure is grown on a no-seed layer in an epitaxial manner with a water-bath method; and 3), an obtained sample with the three-dimensional dendritic structure is subjected to oxygen plasma cleaning and oxygen atmosphere sintering treatment, so that a three-dimensional dendritic TiO2 array nano-structure is obtained. According to the preparation method, the technological operation is simple, the cost is low, the controllability is high, grain boundaries and defects of the obtained TiO2 array are few, high electrical transmission rate and large specific surface area are provided, the TiO2 array can be used for a photo-anode of an photoelectric device, the device performance is improved greatly, and a good application prospect is provided.
Owner:SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI

Method for continuous low temperature sintering of high thermal coefficient AIN ceramics and product thereof

The invention relates to the field of microelectronic packaging material or ceramic material, in particular to a method for continuous low temperature sintering of high thermal coefficient AIN ceramics and a product thereof; the AIN ceramics is prepared from AIN powder and additive by sintering; the AIN powder has an average grain diameter of 1.0-2.0mum and an oxygen content of being equal to or less than 1.0%, the additive is composed of nano AIN powder, sintering auxiliary agent and rare earth metal oxide; wherein the sintering auxiliary agent is selected from CaCO3 and LiCO3, the rare earth metal oxide is selected from Y2O3, Sm2O3, Dy2O3, Nd2O3, Ho2O3 and Er2O3, wherein the content of the sintering auxiliary agent is 1-2wt%, the use amount of the nano AIN powder accounts for 5-10% of the total weight, the content of the rare earth oxide is 1-3wt%. The invention has the beneficial effects that superfine aluminum nitride powder and sintering aid are used to improve sintering property of the aluminium nitride ceramics, lower sintering temperature of the AIN ceramics, so that densification sintering can be carried out with the range of 1450-1600 DEG C and thermal conductivity of the AIN ceramics can reach 170-220W/m.K; in addition, the invention has the advantages of capability of sintering in a continuous hydrogen and nitrogen atmosphere furnace, improved production efficiency, low energy consumption, large output and low cost.
Owner:CHAOZHOU THREE CIRCLE GRP

Efficient and stable perovskite solar battery and preparation method thereof

ActiveCN107275487AFew grain boundariesImprove photoelectric conversion efficiency and stabilitySolid-state devicesSemiconductor/solid-state device manufacturingChemistryOrganic inorganic
The invention discloses an efficient and stable perovskite solar battery, which is formed by transparent conductive glass, an electron transfer layer, a mesoporous layer, a perovskite layer, a hole transfer layer and a back electrode which are laminated in sequence. During preparation of the perovskite layer, a certain quantity of terephthalic acid (TPA) additives are added to a precursor liquid of a traditional organic and inorganic metal halide perovskite, so that growth kinetics of a perovskite crystal changes, an obtained perovskite crystal boundary is filled up, and thus joined large-sized perovskite crystal particles are formed. According to the perovskite solar battery prepared by the method, compared with an additive-free perovskite solar battery, annihilation of photoproduction excitons at the crystal boundary is reduced, so that the photoelectric conversion efficiency is obviously increased. In addition, the perovskite crystal boundary is reduced, moisture, oxygen and the like are difficult to enter from the crystal boundary to corrode the perovskite layer, thereby enabling the stability of the whole battery to be obviously better.
Owner:EAST CHINA NORMAL UNIVERSITY

A fully inorganic perovskite solar cell and a preparation method thereof

A fully inorganic perovskite solar cell and a preparation method thereof are provided. The method comprises the steps of: 1. adding CsI into DMSO, dissolving completely, adding isopropanol, precipitating, filtering, and vacuum drying to obtain treated CsI; 2, dissolving PbI2 (DMSO), PbBr2 (DMSO) and treated CsI, according to the molar ratio of the corresponding elements of CsPbI2Br, to prepare a precursor solution; 3, preparing an electron transport layer on the substrate; spin-coating the solution on the surface of the electron transport layer, and performing annealing at the temperature of 30-40 DEG C and 120-200 DEG C for 2-5 min, so that thin film is crystallized to obtain a fully inorganic perovskite light absorbing lay; 4, sequentially preparing a hole transport layer and a gold electrode layer on the surface of the absorption layer to obtain a fully inorganic perovskite solar cell. The perovskite battery has good stability of water and oxygen, good film-forming property, simplemethod and strong repeatability.
Owner:SHAANXI NORMAL UNIV

Low-temperature polycrystalline silicon film, preparation method thereof, thin film transistor and display panel

The invention discloses a low-temperature polycrystalline silicon film, a preparation method thereof, a thin film transistor and a display panel. The preparation method of the low-temperature polycrystalline silicon film comprises the steps that multiple non-crystalline silicon layers having different membranous parameters deposit, wherein the membranous parameters include refractive index parameters and / or heat conductivity coefficient parameters; dehydrogenation treatment is conducted on the multiple non-crystalline silicon layers having different membranous parameters; crystallization treatment is conducted on the non-crystalline silicon layers subjected to the dehydrogenation treatment to form the low-temperature polycrystalline silicon film. According to the embodiment, by depositing the multiple non-crystalline silicon layers having different membranous parameters different in non-crystalline silicon refraction index and heat conductivity coefficient, formation of large-sized crystalline grains in the crystallization process is promoted, active layer low-temperature polycrystalline silicon has fewer crystal boundaries, leaked current during connection of the thin film transistor can be decreased, and the electrical performance of the thin film transistor is improved.
Owner:BOE TECH GRP CO LTD

Molybdenum carbide modified tubular carbon nitride photocatalytic material and preparation method and application thereof

The invention discloses a molybdenum carbide modified tubular carbon nitride photocatalytic material and a preparation method and application thereof. The molybdenum carbide modified tubular carbon nitride photocatalytic material comprises molybdenum carbide and tubular carbon nitride, wherein the surface of the tubular carbon nitride is modified with the molybdenum carbide. The preparation methodcomprises the steps: suspending the tubular carbon nitride in methanol, so as to obtain a suspension; dispersing the molybdenum carbide in the suspension, carrying out intensive mixing, and carryingout drying, thereby obtaining the molybdenum carbide modified tubular carbon nitride photocatalytic material. According to the molybdenum carbide modified tubular carbon nitride photocatalytic material disclosed by the invention, an energy band structure of the carbon nitride is improved to form molybdenum carbide / carbon nitride heterojunction, so that the effective separation of photoproduction electron-hole pairs is achieved, the utilization efficiency of photoproduction electron-holes is increased, and the effect of photocatalytic degradation is promoted; the molybdenum carbide modified tubular carbon nitride photocatalytic material can be applied to degradation of antibiotics or dyes in wastewater.
Owner:HUNAN UNIV

Ternary precursor and preparation method and application thereof

The invention relates to the technical field of lithium ion battery materials, in particular to a ternary precursor and a preparation method and application thereof. The ternary precursor is of a core-shell structure, the inner core is of a loose and porous compact orange slice type structure, the shell is of a center epitaxial amplification shape, and the fan-shaped central angle of the orange slice type structure is 10-30 degrees; the core of the obtained ternary precursor particle has a loose and porous structure, so that the internal stress is reduced in the charging and discharging process of a lithium battery, and microcracks of the particle are avoided; the shell is compact and is of an orange slice structure, lithium salt can permeate into the core of the ternary precursor more easily in the sintering process of preparing the positive electrode material, the diffusion mass transfer resistance is smaller, the sintering temperature is lower, the dynamic performance is better, and use is more facilitated; the material is large in tap density, good in sphericity degree, uniform in primary particle distribution and narrow in particle size distribution, and a good premise and foundation are provided for subsequent preparation of high-quality positive electrode materials.
Owner:GUANGDONG JIANA ENERGY TECH CO LTD +1
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products