Ta-Al-N diffusion blocking layer thin film for copper wiring and preparation thereof
A technology of copper interconnection and barrier layer, which is applied in the direction of metal material coating process, coating, semiconductor/solid-state device manufacturing, etc., can solve the problems of less grain boundaries and defects, and barrier performance needs to be further improved, so as to achieve low contact resistance , The effect of improving the diffusion barrier ability
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Embodiment 1
[0025] Ta-Al-N diffusion barrier film for copper interconnection, its composition is 1.5%-7.8% Al by mass percentage, 8.4%-11.5% N, the balance is Ta, used for copper interconnection The Ta-Al-N diffusion barrier film is prepared by multi-target magnetron sputtering. The sheet resistance of the Ta-Al-N diffusion barrier film used for copper interconnection is 120-500Ω / □. The Ta-Al-N diffusion barrier film used for copper interconnection is amorphous.
Embodiment 2
[0027] A Ta-Al-N diffusion barrier film for copper interconnection is prepared by magnetron sputtering, comprising the following steps:
[0028] (1) Ta target, Cu target and Al target are installed in the multi-target magnetron sputtering apparatus at the same time. Among them, the Ta target and Cu target are at the DC sputtering position, and the Al target is at the RF sputtering position; the raw materials and components are controlled as follows: 1.5% to 7.8% of Al, 8.4% to 11.5% of N and the balance of Raw materials for Ta; clean and dry silicon wafers with deionized water, ultrasonic waves, absolute ethanol, and acetone; control the sputtering atmosphere, that is, fill the airflow into the multi-target magnetron sputtering instrument, and control the total flow of nitrogen in the airflow 5-10% of the air pressure is stable at 0.9-1.2Pa;
[0029] (2) Ta-Al-N thin films were prepared in situ by magnetron sputtering; the substrate was rotated to improve the uniformity of fi...
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