Method for using chemical vapor deposition method to prepare perovskite film solar cell

A vapor deposition method and a technology for solar cells, applied in the field of solar cells, can solve the problem of high cost and achieve the effects of less grain boundaries, large grains and good uniformity

Inactive Publication Date: 2016-02-24
PKU HKUST SHENZHEN HONGKONG INSTITUTION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although the solution method is relatively simple, it requires spin coating, and it is more challenging to prepare large-scale devices.
The gas phase method generally requires a high vacuum environment, and the cost is relatively high.

Method used

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  • Method for using chemical vapor deposition method to prepare perovskite film solar cell
  • Method for using chemical vapor deposition method to prepare perovskite film solar cell
  • Method for using chemical vapor deposition method to prepare perovskite film solar cell

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Embodiment Construction

[0028] The present invention will be further elaborated below through specific examples.

[0029] The present invention prepares perovskite thin-film solar cells through the following steps:

[0030] (1) Pretreating the substrate;

[0031] The substrate is FTO conductive glass. In this embodiment, the FTO conductive glass is produced by HARTFORD GLASS, USA, and has a sheet resistance of 8 ohms.

[0032] First, use an argon ion thinner to work for 10 minutes at 1KV (kilovolt) voltage and 75° incident angle to reduce the surface roughness of the FTO bottom; secondly, immerse the substrate in acetone in sequence, including Three percent polyethylene glycol monooctylphenyl ether (TritonX-100) in deionized water (Milipore, 18 MΩ-cm), and sonicated for 30 minutes in each of the above solutions; Rinse with deionized water and sonicate in isopropanol for 30 minutes; finally wash the substrate with deionized water, sonicate in deionized water for 30 minutes, and finally dry it with a...

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Abstract

The invention discloses a method for using a chemical vapor deposition method to prepare a perovskite film solar cell. The method comprises the following steps of: (1) pre-processing a substrate; (2) coating a TiO2 compact layer on the surface of the substrate after the pre-processing; (3) using a one-step method to prepare a perovskite material layer; (4) carrying out spin coating on the perovskite material layer so as to prepare a Spiro-OMeTAD solar cell cavity transmission layer; and (5) drying a device prepared by the steps (1)-(4), completing cathode metal electrode deposition, and obtaining the perovskite film solar cell. According to the invention, a simple gas phase transmission method is utilized, the simple one-step chemical vapor deposition (CVD) method is developed, the halide perovskite solar cell is prepared without depending on high vacuum equipment, and the energy conversion efficiency exceeds 11%.

Description

technical field [0001] The invention relates to a solar cell, in particular to a method for preparing a perovskite thin-film solar cell by using a chemical vapor deposition method. Background technique [0002] In the past few years, the rapid development of low-cost and high-efficiency lead halide perovskite thin-film solar cells has aroused great interest in perovskite solar cells. In just four years, the power conversion efficiency (PCE) of this type of solar cell increased from 3.8 percent to 19.3 percent, making it comparable in efficiency to commercial crystalline silicon solar cells. while CH 3 NH 3 PB 3 and CH 3 NH 3 PB 3-x Cl x Lead halide perovskite materials have become the preferred materials for the preparation of low-cost and high-efficiency solar cells due to their excellent optical and electrical properties. It is well known that perovskite materials can have many different compositions and structures according to different metal halide frameworks and...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/48H01L51/44C23C16/44H01L21/205
CPCC23C16/44H10K30/80H10K30/00Y02E10/549
Inventor 范智勇何进
Owner PKU HKUST SHENZHEN HONGKONG INSTITUTION
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