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A preparation method of perovskite thin film and a preparation method of solar cell thereof

A solar cell and perovskite technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of complex evaporation control, and achieve the effect of solving complex control, easy control, and simple operation

Active Publication Date: 2019-01-15
XI AN JIAOTONG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The invention provides a method for preparing a perovskite thin film and a method for preparing a solar cell; adopting a continuous vacuum deposition method, first evaporating BX 2 , and then flash the excess AX, and finally wash off the excess AX to obtain a uniform and dense perovskite film. Technology in ABX 3 Evaporation controls complex issues to facilitate large-scale production of perovskite thin films

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  • A preparation method of perovskite thin film and a preparation method of solar cell thereof
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  • A preparation method of perovskite thin film and a preparation method of solar cell thereof

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preparation example Construction

[0029] The invention provides a method for preparing a perovskite thin film, wherein the perovskite ABX 3 The raw materials are composed of metal halides, and organic or inorganic salts; the metal halides are BX 2 , B is the cationic Pb 2+ , Sn 2+ or Ge 2+; The organic salt or inorganic salt is AX, and A is methylamine cation, formamidine cation or cesium Cs + ; X is anion Cl - , Br - or I - one or a combination of more. Specifically, the following steps are included:

[0030] In step S1, firstly, the evaporation boat is pretreated, including cleaning and drying the evaporation boat; then, the evaporation boat is subjected to ultraviolet-ozone or plasma treatment for at least 2 minutes.

[0031] Optionally, the evaporation boat is cleaned with deionized water, acetone, ethanol, and deionized water in sequence, and the cleaning time is 15 minutes each time; then, the evaporation boat is dried with nitrogen or infrared.

[0032] Optionally, evenly spread the AX salt sol...

Embodiment 1

[0059] Perovskite raw material ABX in the present embodiment 3 In AX select MAI; BX 2 for PbI 2 ; The evaporation boat is made of molybdenum sheet.

[0060] The specific process is as follows: first, use deionized water, acetone, ethanol and deionized water to clean the evaporation boat in sequence, and the cleaning time is 15 minutes each time, then use nitrogen to dry the evaporation boat, and then use ultraviolet-ozone to treat the evaporation boat. 5min; then spread the prepared MAI solution evenly on the surface of the evaporating boat, the concentration of MAI is 3M, and the solvent is DMF; then dry the evaporating boat, the drying process is, drying at 80°C for 5min, Then, it was dried at 120° C. for 5 minutes, and a layer of MAI solid was uniformly and densely distributed on the surface of the obtained evaporation boat.

[0061] Then fix the evaporation boat in the chamber of the evaporation machine, put the substrate, and the distance between the substrate and the ...

Embodiment 2

[0064] Perovskite raw material ABX in the present embodiment 3 In AX select CsCl,; BX 2 for GeCl 2 ; The evaporation boat is made of tungsten sheet.

[0065] The specific process is as follows: first, use deionized water, acetone, ethanol and deionized water to clean the evaporation boat in sequence, each cleaning time is 16 minutes, then use infrared to dry the evaporation boat, and use ultraviolet-ozone to dry the evaporation boat Treat for 4 minutes; then apply the prepared CsCl solution evenly on the surface of the evaporating boat, where the concentration of CsCl is 0.1M, and the solvent is butanol; then dry the evaporating boat at 80°C After drying for 5 minutes, and then drying at 120° C. for 5 minutes, a layer of CsCl solid is uniformly and densely distributed on the surface of the obtained evaporation boat; 0.1 wt % cetyltrimethylammonium bromide is added to the CsCl solution.

[0066] Then fix the evaporation boat in the chamber of the evaporation machine, set the...

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Abstract

The invention discloses a preparation method of a perovskite thin film and a preparation method of a solar cell thereof. Includes depositing BX2 in perovskite ABX3 raw material on substrate by vacuumthermal evaporation, and forming BX2 thin film on substrate; Flashing the AX salt in the perovskite ABX3 raw material on the BX2 film to obtain a perovskite film covered with excessive AX salt on thesurface; The excess AX salt was washed to give a thickness of 80- 500nm perovskite film. BX2 is evaporate first, Then the excess AX is flashed, and finally the excess AX is washed away to obtain uniform and compact perovskite thin film. The method makes the preparation of perovskite thin film layer more controllable, simple in operation and good in repeatability, solves the problem of complex control of ABX3 vapor deposition in the prior art, thereby facilitating the large-scale production of perovskite thin film.

Description

technical field [0001] The invention belongs to the technical field of perovskite solar cells; in particular, it relates to a preparation method of a perovskite thin film, and also relates to a preparation method based on a perovskite solar cell. Background technique [0002] In recent years, energy issues have been accompanied by human development, and the research on photovoltaic cells based on clean energy solar energy has always attracted people's attention. Among many solar cells, perovskite cells have been in a period of rapid development in recent years. As early as 2013, perovskite solar cells were selected as one of the top ten scientific breakthroughs of the year by Science magazine. The organic-inorganic composite perovskite light absorbing layer has the following advantages: high light absorption coefficient, high carrier mobility, long carrier lifetime, and long carrier diffusion distance. After 9 years of development, the current photoelectric conversion effi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/00H01L51/42H01L51/48H10K99/00
CPCH10K71/164H10K30/50H10K30/40Y02E10/549Y02P70/50H10K85/50
Inventor 吴朝新雷霆董化焦博牛永徐洁侯洵
Owner XI AN JIAOTONG UNIV
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