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Molybdenum disulfide film with consistent grain orientation height and preparation method thereof

A technology of molybdenum disulfide and crystal orientation, applied in the field of two-dimensional materials, can solve the problems of reducing carrier mobility, negative impact on electrical and optical properties, etc., and achieve less strain and defects, less grain boundaries, and high electron mobility Effect

Pending Publication Date: 2022-01-21
NANJING UNIV OF POSTS & TELECOMM
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

For example, grain boundaries can significantly reduce their carrier mobility and negatively affect their electrical and optical properties

Method used

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  • Molybdenum disulfide film with consistent grain orientation height and preparation method thereof
  • Molybdenum disulfide film with consistent grain orientation height and preparation method thereof
  • Molybdenum disulfide film with consistent grain orientation height and preparation method thereof

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Embodiment 1

[0033] (1) Place the sapphire substrate in acetone, ethanol, and deionized water for 10 minutes for ultrasonic cleaning, and then dry it with dry nitrogen. Clean the quartz boat with the same cleaning method, place it in acetone, ethanol, and deionized water for 10 minutes, and then blow it dry with dry nitrogen.

[0034] (2) The c-plane sapphire substrate is annealed at high temperature (1000°C) for 1 hour in air to obtain atomically flat steps along the specific crystal direction.

[0035] (3) Weigh the precursor with a weighing balance. Weigh 6mg of MoO 3 The powder and the NaCl powder of 3mg were mixed evenly, and the two were ground for 10 minutes and then placed in the second temperature zone. The annealed sapphire is also placed in the second temperature zone, downstream of the carrier gas at a distance of 5 cm from the Mo source. Weigh 138 mg of S powder and place it in the first temperature zone.

[0036] (4) Before heating up the tube furnace, vacuumize the quar...

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Abstract

The invention provides a method for preparing a molybdenum disulfide film with consistent grain orientation height on a sapphire substrate. The method comprises the following steps of: adopting c-plane sapphire as the substrate, and carrying out high-temperature annealing treatment on the substrate before growth; putting the sapphire substrate into a first quartz boat, mixing and grinding MoO3 and NaCl, weighing a mixture and putting the mixture into a second quartz boat, and putting S powder into a third quartz boat; and putting the three quartz boats into a chemical vapor deposition system cavity, introducing carrier gas, controlling the temperature in the cavity and carrying out a chemical vapor deposition process, and thus obtaining the molybdenum disulfide film with the consistent grain orientation height on the sapphire substrate. The method solves the problem of random grain orientation of molybdenum disulfide prepared by a chemical vapor deposition method, realizes preparation of the molybdenum disulfide film with the consistent grain orientation height, has the advantages of simple process, low cost and the like, and is suitable for industrial batch production.

Description

technical field [0001] The invention belongs to the technical field of two-dimensional materials, and relates to a molybdenum disulfide film with highly uniform grain orientation and a preparation method thereof, in particular to a preparation method for growing molybdenum disulfide with a specific crystal orientation on a sapphire substrate. Background technique [0002] Transition metal dichalcogenides (TMDCs) are international research hotspots in recent years. They have a honeycomb structure similar to graphene and have a general chemical coordination formula MX 2 (Here M represents a transition metal atom, X is a chalcogen atom), such as a combination of molybdenum or tungsten and sulfur, selenium or tellurium, typically such as molybdenum disulfide (MoS 2 ). Since the adjacent positions in the lattice of single-layer TMDCs are occupied by different atoms, the lattice inversion symmetry is broken, and a new quantum state-the energy valley quantum state is introduced, w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/30C23C16/455C23C16/52
CPCC23C16/305C23C16/455C23C16/52
Inventor 闫巍康璐璐孟岚李兴鳌
Owner NANJING UNIV OF POSTS & TELECOMM
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