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High-performance perovskite solar cell and preparation method for same

A solar cell, perovskite technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as affecting current density, restricting visible light absorption, etc., to achieve the effect of improving quality, high photoelectric conversion efficiency, and few grain boundaries

Active Publication Date: 2016-08-03
ANHUI HUASUN ENERGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the limitation of film thickness, material characteristics and preparation process of perovskite thin-film solar cells, its thickness is usually about several hundred nanometers, which restricts its absorption of visible light to a certain extent and affects the improvement of its current density.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] A preparation method of a high-performance perovskite solar cell, comprising the following steps:

[0026] (1) Use acetone, ethanol, and deionized water to ultrasonically sonicate the FTO substrate for 10 minutes, and then dry it for later use;

[0027] (2) spin-coating (6,6)-phenyl-C61-butyric acid methyl ester onto a clean FTO substrate to obtain an electron transport layer with a thickness of 30 nm;

[0028] (3) spin-coating a cesium carbonate solution on the electron transport layer at a rotational speed of 1000 rpm, and then heating at 50-60° C. for 10 min to obtain an interface modification layer;

[0029] (4) PbI with a concentration of 400 mg / mL 2 The solution of N,N-dimethylformamide was spin-coated on the interface modification layer, then heated at 70°C for 10min, and placed in a vacuum drying oven together with the iodide powder after natural cooling. The pressure was 10-20KPa and the temperature 150 °C, heating the iodide powder, evaporated with PbI 2 Th...

Embodiment 2

[0033] A preparation method of a high-performance perovskite solar cell, comprising the following steps:

[0034] (1) Use acetone, ethanol, and deionized water to ultrasonically sonicate the FTO substrate for 15 minutes, and then dry it for use;

[0035] (2) spin-coating (6,6)-phenyl-C61-butyric acid methyl ester onto a clean FTO substrate to obtain an electron transport layer with a thickness of 50 nm;

[0036] (3) spin-coating a cesium acetate solution on the electron transport layer at a rotational speed of 3000 rpm, and then heating at 50-60° C. for 20 min to obtain an interface modification layer;

[0037] (4) PbI with a concentration of 500 mg / mL 2 The dimethyl sulfoxide solution was spin-coated on the interface modification layer, then heated at 100 °C for 25 min, and placed in a vacuum drying oven together with the iodide powder after natural cooling, under the pressure of 10-20KPa and the temperature of 170 °C , heated iodide powder, evaporated with PbI 2 The film ...

Embodiment 3

[0041] A preparation method of a high-performance perovskite solar cell, comprising the following steps:

[0042] (1) Use acetone, ethanol, and deionized water to ultrasonically sonicate the FTO substrate for 11 minutes, and then dry it for later use;

[0043] (2) spin-coating (6,6)-phenyl-C61-butyric acid methyl ester onto a clean FTO substrate to obtain an electron transport layer with a thickness of 35 nm;

[0044] (3) spin-coating a cesium acetate solution on the electron transport layer at a rotational speed of 1500 rpm, and then heating at 50-60° C. for 12 min to obtain an interface modification layer;

[0045] (4) PbBr with a concentration of 420 mg / mL 2 The solution of N,N-dimethylformamide was spin-coated on the interface modification layer, then heated at 80°C for 15min, and placed in a vacuum drying oven together with the iodide powder after natural cooling. The pressure was 10-20KPa and the temperature At 155 °C, the iodide powder is heated and evaporated with Pb...

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Abstract

The invention discloses a high-performance perovskite solar cell which comprises a substrate, an electronic transmission layer, an interface modification layer, a perovskite absorption layer, a hole transport layer and an counter electrode, wherein the interface modification layer is made of the modification material of cesium salt; and the perovskite light absorption layer is prepared by a gas phase auxiliary solution method. The invention also discloses a preparation method for the high-performance perovskite solar cell. The solar cell has the advantages that photoelectric conversion efficiency is high; stability is high; the preparation method is simple; cost is low; and large-scale production can be carried out.

Description

Technical field: [0001] The invention relates to the technical field of batteries, in particular to a high-performance perovskite solar battery. Background technique: [0002] With the substantial growth of human demand for energy, the serious environmental pollution caused by fossil energy, and the continuous depletion of fossil energy, the energy problem has become a problem faced by all mankind. Solar energy is a clean, safe and inexhaustible energy source. The effective use of solar energy is of great significance to alleviate the energy crisis, protect the environment and promote economic development. [0003] Perovskite solar cells have attracted widespread attention from scientific researchers all over the world due to their low cost and simple preparation process, and have become one of the most potential renewable energy sources. However, due to the limitations of the film thickness, material properties and preparation process of perovskite thin film solar cells, t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/48H01L51/42H01L51/44
CPCH10K30/00H10K30/80Y02E10/549Y02P70/50
Inventor 王文庆
Owner ANHUI HUASUN ENERGY CO LTD
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