37results about How to "Achieve epitaxial growth" patented technology

The invention relates to a method for preparing polytetrafluoroethylene (PTFE) ordered template based on temperature-controllable, pressure-controllable and friction film forming device. The device consists of a numerical control motor, a temperature control module and a pressure control module. Due to the adoption of the device, ordered PTFE templates are prepared on various rigid substrate materials such as glass, ITO and a silicon wafer, and the PTFE templates with different film thicknesses are acquired by controlling the parameters such as temperature, pressure and friction film forming speed; the templates have ordered heights, and can be used for epitaxial growth of various organic semiconductors and ferroelectric polymer films.

The application provides an InAs / GaSb buffer layer, a silicon-based antimonide semiconductor material, a preparation method and components thereof. The InAs / GaSb buffer layer includes one or more basic buffer units, each basic buffer unit includes one or more basic unit layers, and each basic unit layer includes one or more sets of alternately arranged GaSb parts and InAs parts. The silicon-based antimonide semiconductor material includes a silicon substrate and a pure gallium antimony layer, and an InAs / GaSb buffer layer is arranged between the silicon substrate and the pure gallium antimony layer. The preparation method includes: growing GaSb part and InAs part on the silicon substrate to obtain multiple basic unit layers; and then growing pure gallium antimony layer. Components, whose raw materials include InAs / GaSb buffer layer or silicon-based antimonide semiconductor material. The InAs / GaSb buffer layer provided by the application can reduce the lattice mismatch between silicon and GaSb, thereby realizing high-quality antimonide epitaxial growth.

The invention provides a nano doping structure and a preparation method thereof. The preparation method comprises the following steps of: 1) placing a nano material into a reaction chamber of an atom layer depositing system; 2) utilizing an atom layer depositing method to deposit a dopant material with the thickness of 1-2 cycles; 3) depositing a base material of a nano material with the thickness of X cycles; and 4) alternatively and circularly depositing dopants and substrate material layers obtained in the steps 2) and 3) with the thickness of Y cycles, wherein the selection of the X is determined according to an actual doping ratio; when the X is smaller, a doping ratio is larger; and the selection of the Y is determined according to the thickness of an actually-needed doping layer, and the doping layer is thicker when the Y is greater. According to the nano doping structure and the preparation method thereof, an in-situ atom layer depositing technology is adopted, a process is simple and is easy to realize, a reaction temperature is low and an applicable material range is wide.

The invention relates to a preparation method of a zinc oxide based diluted magnetic semiconductor thin film and an in-situ regulation and control method of charge concentration of the zinc oxide based diluted magnetic semiconductor thin film. A composition chemical formula of the zinc oxide based diluted magnetic semiconductor thin film is Zn1-xMnxO, wherein x is more than or equal to 0 and is less than or equal to 0.75. The preparation method comprises the following step: by taking a Zn1-xMnxO ceramic block as a target material, depositing Zn1-xMnxO on a ferroelectric single crystal substrate by adopting a pulsed laser deposition technique to obtain the zinc oxide based diluted magnetic semiconductor thin film.

The invention discloses a high-temperature large area silicon carbide epitaxial growth device and a treatment method. The high-temperature large area silicon carbide epitaxial growth device comprises a closed working chamber made of stainless steels, a graphite reaction cavity chamber arranged in the working chamber and a heating component arranged at the periphery of the reaction cavity chamber, wherein a tray groove is arranged in the reaction cavity chamber, a tray which bears a silicon carbide substrate is arranged in the tray groove, the reaction cavity chamber is provided with a penetrating channel, and a gas inlet device and a gas outlet device are respectively arranged at two ends of the channel. During treatment, the silicon carbide substrate is put into the reaction cavity chamber and then vacuumized and heated, reaction gas is introduced into the reaction cavity chamber so as to allow epitaxial growth of the silicon carbide, and then the silicon carbide taken out. Compared with the traditional quartz tube structure, the high-temperature large area silicon carbide epitaxial growth device has a simple structure, is relatively easy to manufacture, is convenient to process and can be used for treating the silicon carbide with a larger area. In addition, according to the high-temperature large area silicon carbide epitaxial growth device disclosed by the invention, the working chamber is in a water-cooling stainless steel structure, has higher strength and is not easy to damage.