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Flexible ferroelectric film containing defect dipole and manufacturing method

A defect dipole, ferroelectric thin film technology, applied in thermoelectric devices, circuits, thermoelectric devices with thermal changes in dielectric constant, etc., can solve the problem of ferroelectric materials losing giant electric card effect, etc., and achieve a wide range of application prospects and markets. Effects of changing values ​​of development space, surface flatness, high polarization

Pending Publication Date: 2022-06-24
XIANGTAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, most ferroelectric materials can only have the giant electric card effect when they are above the Curie temperature. At the same time, a high-voltage electric field must be applied to the ferroelectric material, which may cause the ferroelectric material to be destroyed and lose the giant electric card effect.

Method used

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  • Flexible ferroelectric film containing defect dipole and manufacturing method
  • Flexible ferroelectric film containing defect dipole and manufacturing method
  • Flexible ferroelectric film containing defect dipole and manufacturing method

Examples

Experimental program
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Effect test

Embodiment 1

[0044]This embodiment discloses a flexible ferroelectric film containing defective dipoles, such as the attached figure 1 As shown, it includes: a mica substrate 1 , and a buffer layer 2 , a bottom electrode layer 3 and a ferroelectric functional layer 4 sequentially grown on the mica substrate 1 .

[0045] In order to further optimize the above technical solution, the material of the buffer layer 2 is CoFe 2 O 4 thin film with a thickness of 8 nm.

[0046] In order to further optimize the above technical solution, the material of the bottom electrode layer 3 is SrRuO 3 thin film with a thickness of 25 nm.

[0047] In order to further optimize the above technical solution, the material of the ferroelectric functional layer 4 is Pb (Zr 0.2 Ti 0.8 )O 3 thin film with a thickness of 240 nm.

Embodiment 2

[0049] On the basis of Embodiment 1, this embodiment discloses a method for manufacturing a flexible ferroelectric film containing defective dipoles, which specifically includes:

[0050] 1) A buffer layer is grown on a mica substrate by a pulsed laser deposition process;

[0051] Wherein, the smooth and flat mica substrate is selected; and the material of the buffer layer is CoFe 2 O 4 film;

[0052] 2) growing a bottom electrode layer on the buffer layer by a pulsed laser deposition process;

[0053] Among them, the material of the bottom electrode layer is SrRuO 3 film;

[0054] 3) growing a ferroelectric functional layer on the bottom electrode layer by a pulsed laser deposition process;

[0055] The material of the ferroelectric functional layer 4 is Pb (Zr 0.2 Ti 0.8 )O 3 film.

[0056] In order to further optimize the above-mentioned technical scheme, the laser in the pulsed laser deposition process used in the step 1) growing the buffer layer on the mica subst...

Embodiment 3

[0060] like figure 1 As shown, this embodiment discloses a flexible ferroelectric film containing defective dipoles, and the flexible ferroelectric thin film containing defective dipoles includes from bottom to top:

[0061] mica substrate 1; buffer layer 2 grown on mica substrate 1; bottom electrode layer 3 grown on buffer layer 2; ferroelectric functional layer 4 grown on bottom electrode layer 3.

[0062] In order to further optimize the above technical solution, the material of the buffer layer 2 is CoFe 2 O 4 thin film with a thickness of 12 nm.

[0063] In order to further optimize the above technical solution, the material of the bottom electrode layer 3 is SrRuO 3 thin film with a thickness of 35 nm.

[0064] In order to further optimize the above technical solution, the material of the ferroelectric functional layer 4 is Pb (Zr 0.2 Ti 0.8 )O 3 thin film with a thickness of 280 nm.

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Abstract

The invention discloses a flexible ferroelectric film containing a defect dipole and a manufacturing method. The film mainly comprises a mica substrate, a buffer layer CoFe2O4 film, a bottom electrode layer SrRuO3 film and a ferroelectric functional layer Pb (Zr0. 2Ti0. 8) O3 film, wherein the buffer layer CoFe2O4 film, the bottom electrode layer SrRuO3 film and the ferroelectric functional layer Pb (Zr0. 2Ti0. 8) O3 film sequentially grow on the mica substrate. In the manufacturing method, a pulse laser deposition process is adopted, and volatilization of Pb ions in the Pb (Zr0. 2Ti0. 8) O3 ferroelectric film is controlled by using different process parameters, so that Pb ion vacancies are introduced into the ferroelectric film to be combined with O vacancies to form defect dipoles. A ferroelectric domain overturning process can be effectively regulated and controlled by introducing a defect dipole into the ferroelectric functional layer, so that the change quantity of a polarization state is improved, a giant electrocaloric effect is generated near the room temperature, and the change quantity of polarization intensity before and after an external electric field is applied and removed can reach 50 [mu] C / cm < 2 >; wide application prospects are realized in the field of solid-state refrigeration.

Description

technical field [0001] The invention relates to the technical field of electronic materials, and more particularly to a flexible ferroelectric thin film containing defective dipoles and a manufacturing method. Background technique [0002] Ferroelectric materials have the characteristics of spontaneous polarization within a certain temperature range, and the spontaneous polarization can be changed under the action of an electric field, which has attracted attention in functional materials in recent decades. Ferroelectric materials have broad application prospects in non-volatile random access memory, sensors, capacitors and transducers due to their very good dielectric, piezoelectric and pyroelectric properties. . [0003] The electric card effect of ferroelectric materials refers to the phenomenon that under adiabatic conditions, the application or removal of an external electric field can cause changes in the polarization of ferroelectrics, resulting in changes in materia...

Claims

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Application Information

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IPC IPC(8): H01L37/02C23C14/28C23C14/08H10N15/10
CPCC23C14/28C23C14/088C23C14/085C23C14/08H10N15/15H10N15/10
Inventor 王金斌唐铭锴任传来钟高阔戴李雨芬钟向丽谭丛兵张园安峰
Owner XIANGTAN UNIV
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