The invention discloses a method for low-cost preparation of large-size monocrystal
graphene, relates to a preparation method of monocrystal
graphene, and is used for solving the technical problems that in the
chemical vapor deposition (CVD) method for preparing the large-size monocrystal
graphene material, the common monocrystal
substrate surface treatment process is complex, and the monocrystal substrate is difficult to reuse and high in cost. The method disclosed by the invention comprises the following steps of: I, evaporating a monocrystal
metal thin film on a monocrystal
mica substrate; II, placing the monocrystal
metal thin film obtained from the step I into
chemical vapor deposition equipment, vacuumizing and filling H2 and Ar, increasing temperature and implementing heat treatment; III, continuing to fill a CH4 gas, and depositing; and IV, closing a
heating power supply, stopping filling the CH4 gas, rapidly cooling to
room temperature by taking Ar and H2 as protective gases, and promoting uniform growth of high-quality monocrystal graphene on the surface of the monocrystal
metal substrate. The monocrystal graphene prepared by the invention is large in size, high in quality and few in defect; and the method disclosed by the invention is applicable to monocrystal graphene material manufacturing field.