186 results about "Crystalline oxide" patented technology

A process for the preparation of pentafluoroethane is disclosed which involves contacting a mixture comprising hydrogen fluoride and at least one starting material selected from haloethanes of the formula CX3CHX2 and haloethanes of the formula CX2═CX2, where each X is independently selected from the group consisting of F and Cl (provided that no more than four of X are F), with a fluorination catalyst in a reaction zone to produce a product mixture comprising HF, HCl, pentafluoroethane, underfluorinated halogenated hydrocarbon intermediates and less than 0.2 mole percent chloropentafluoroethane based on the total moles of halogenated hydrocarbons in the product mixture. The process is characterized by the fluorination catalyst comprising (i) a crystalline cobalt-substituted alpha-chromium oxide where from about 0.05 atom % to about 6 atom % of the chromium atoms in the alpha-chromium oxide lattice are replaced by trivalent cobalt (Co+3) and / or (ii) a fluorinated crystalline oxide of (i).

To provide a field-effect transistor improved in transparency, electrical properties, stability, uniformity, reproducibility, heat resistance and durability, and as a reduced overlap capacity between electrodes.A field-effect thin film transistor 1001 includes a gate electrode 1025, an active layer, a source electrode 1022 and a drain electrode 1023, wherein a crystalline oxide 1021 containing indium and having an electron carrier concentration of less than 1018 / cm3 is used as the active layer, and the gate electrode 1025 is in self-alignment with the source electrode 1022 and the drain electrode 1023. The crystalline oxide 1021 contains a positive trivalent element different from a positive divalent element or indium.

An object is to manufacture a semiconductor device including an oxide semiconductor film, which has stable electric characteristics and high reliability. A crystalline oxide semiconductor film is formed, without performing a plurality of steps, as follows: by utilizing a difference in atomic weight of plural kinds of atoms included in an oxide semiconductor target, zinc with low atomic weight is preferentially deposited on an oxide insulating film to form a seed crystal including zinc; and tin, indium, or the like with high atomic weight is deposited on the seed crystal while causing crystal growth. Further, a crystalline oxide semiconductor film is formed by causing crystal growth using a seed crystal with a hexagonal crystal structure including zinc as a nucleus, whereby a single crystal oxide semiconductor film or a substantially single crystal oxide semiconductor film is formed.

A field effect transistor including a source electrode 107a, a drain electrode 107b, a gate electrode 103, an insulating film 105 and a semiconductor layer 109 containing a crystalline oxide, wherein the source electrode 107a and the drain electrode 107b are self-aligned with the gate electrode 103 with the insulating film 105 therebetween.

A process for the preparation of 2-chloro-1,1,1,3,3,3-heptafluoropropane is disclosed which involves (a) contacting a mixture comprising hydrogen fluoride, chlorine, and at least one starting material selected from the group consisting of halopropenes of the formula CX3CCI═CX2 and halopropanes of the formula the CX3CCIYCX3, wherein each X is independently F or Cl, and Y is H, Cl or F (provided that the number of X and Y which are F totals no more than six) with a chlorofluorination catalyst in a reaction zone to produce a product mixture comprising CF3CCIFCF3, HCI, HF. and underfluorinated halogenated hydrocarbon intermediates. The process is characterized by said chlorofluorination catalyst comprising at least one chromium-containing component selected from (i) a crystalline alpha-chromium oxide where at least 0.05 atom % of the chromium atoms in the alpha-chromium oxide lattice are replaced by nickel, trivalent cobalt or both nickel and trivalent cobalt, provided that no more than 2 atom % of the chromium atoms in the alpha-chromium oxide lattice are replaced by nickel and that the total amount of chromium atoms in the alpha-chromium oxide lattice that are replaced by nickel and trivalent cobalt is no more than 6 atom %, and (ii) a fluorinated crystalline oxide of (i). Also disclosed is a process for the manufacture of a mixture of HFC-227ea and hexafluoropropene by reacting a starting mixture comprising CFC-217ba and hydrogen in the vapor phase at an elevated temperature, optionally in the presence of a hydrogenation catalyst. This process involves preparing the CFC-217ba by the process described above.