92 results about "Band offset" patented technology

Three configurations of double barrier resonant tunneling diodes (RTD) are provided along with methods of their fabrication. The tunneling barrier layers of the diode are formed of low band offset dielectric materials and produce a diode with good I-V characteristics including negative differential resistance (NDR) with good peak-to-valley ratios (PVR). Fabrication methods of the RTD start with silicon-on-insulator substrates (SOI), producing silicon quantum wells, and are, therefore, compatible with main stream CMOS technologies such as those applied to SOI double gate transistor fabrication. Alternatively, Ge-on-insulator or SiGe-on-insulator substrates can be used if the quantum well is to be formed of Ge or SiGe. The fabrication methods include the formation of both vertical and horizontal silicon quantum well layers. The vertically formed layer may be oriented so that its vertical sides are in any preferred crystallographic plane, such as the 100 or 110 planes.

In one embodiment, a method for encoding sample adaptive offset (SAO) values in a video encoding process is provided, the method comprising: selecting a band offset type; determining a range of values associated with the selected band offset type, the range of values not being transmitted during encoding; generating one or more offset values for the selected band offset type; and optionally applying an offset value to at least a current pixel value to form an SAO compensated value.

A photovoltaic device and method include a substrate coupled to an emitter side structure on a first side of the substrate and a back side structure on a side opposite the first side of the substrate. The emitter side structure or the back side structure include layers alternating between wide band gap layers and narrow band gap layers to provide a multilayer contact with an effectively increased band offset with the substrate and / or an effectively higher doping level over a single material contact. An emitter contact is coupled to the emitter side structure on a light collecting end portion of the device. A back contact is coupled to the back side structure opposite the light collecting end portion.

In one embodiment, method for decoding a video bitstream comprises: (a) receiving a video bitstream; (b) deriving processed video data from the bitstream; (c) partitioning the processed video data into blocks, wherein each of the blocks is equal to or smaller than a picture; (d) deriving an SAO type from the video bitstream for each of the blocks, wherein the SAO type is selected from the group consisting of one or more edge offset (EO) types and a single merged band offset (BO) type; (e) determining an SAO sub-class associated with the SAO type for each of the pixels in each of the blocks; (f) deriving intensity offset from the video bitstream for the sub-class associated with the SAO type; and (g) applying SAO compensation to each of the pixels in a processed video block, wherein the SAO compensation is based on the intensity offset of step (f).

Methods and apparatus for reducing transmit emissions are described herein. The transmit out of band emissions in an adjacent band can be reduced while complying with existing wireless communication standards through utilization of one or more of reduced transmit bandwidth, transmit operating band offset, and channel index remapping. The transceiver can support a receive operating band that is substantially adjacent to a band edge. The transmit operating band can be offset from an adjacent frequency band, and can use a narrower operating band than is supported by the receiver. The transmit baseband signal can have a reduced bandwidth to reduce the amount of noise. The frequency offset can introduce a larger transition band between the transmit operating band edges and the adjacent frequency band of interest. The transceiver can remap channel assignments to compensate for the frequency offset such that the frequency offset introduced in the transmitter is transparent to channel allocation.

The present invention relates to a method for encoding and decoding image information and to an apparatus using same, and the method for encoding the image information, according to the present invention, comprises the steps of: generating a recovery block; applying a deblocking filter to the recovery block; applying a sample adaptive offset (SAO) to the recovery block to which the deblocking filter is applied; and transmitting the image information including information on the SAO which is applied, wherein in the step of transmitting, information for specifying bands that cover a scope of a pixel value, to which a band off set is applied, is transmitted when the band offset is applied during the step of applying the SAO.

A SONOS type memory includes a semiconductor substrate, first and second impurity regions in the semiconductor substrate doped with impurity ions of a predetermined conductivity, separated a predetermined distance from each other, a channel region between the first and second impurity regions, and a data storage type stack on the semiconductor substrate between the first and second impurity regions. The data storage type stack includes a tunneling oxide layer, a memory node layer for storing data, a blocking oxide layer, and an electrode layer, which are sequentially formed. A dielectric constant of the memory node layer is higher than dielectric constants of the tunneling and the blocking oxide layers, and a band offset of the memory node layer is lower than band offsets of the tunneling and the blocking oxide layers. The tunneling oxide layer and the blocking oxide layer are high dielectric insulating layers.

A method and / or device (285) for determining first and second band offsets (100, 110) at a semiconductor / dielectric heterointerface (115), which includes the semiconductor / dielectric heterointerface (115) exposed to incident photons (205) from a light source (200); a detector (275, 280) for generating a signal by detecting emitted photons (260, 265) from the semiconductor / dielectric heterointerface (115); and an element (310) for changing the energy of incident photons (205) to monitor the first and second band offsets (100, 110).

A multi-layer semiconductor structure is disclosed for use in III-Nitride semiconductor devices, including a channel layer, a band-offset layer having a wider bandgap than the channel layer, a spacer layer having a narrower bandgap than the band-offset layer, and a cap layer comprising at least two sublayers. Each sublayer is selectively etchable with respect to sublayers immediately below and above, each sublayer comprises a III-N material AlxInyGazN in which 0≦x≦1, 0≦y≦1, and 0≦z≦1, at least one sublayer has a non-zero Ga content, and a sublayer immediately above the spacer layer has a wider bandgap than the spacer layer. Also described are methods for fabricating such semiconductor structures, with gate and / or ohmic recesses formed by selectively removing adjacent layers or sublayers. The performance of resulting devices is improved, while providing design flexibility to reduce production cost and circuit footprint.

A method and apparatus for image coding using hierarchical sample adaptive band offset. The method includes decoding a signal of a portion of an image, determining a band offset type and offset of a portion of the image, utilizing the band offset type and offset to determine a sub-band, and reconstructing a pixel value according to the determined offset value.

A triple-band offset hybrid antenna having a shaped reflector is disclosed. The triple-band offset hybrid antenna includes: a shaped reflector reflecting a K / Ku bands RF signals received from a satellite to focus an energy of the K / Ku band RF signals on a focal line and reflecting a Ka band RF transmitting signal; and a triple-band active phased feed array receiving the reflected K / Ku bands RF signals from the shaped reflector and radiating the Ka band RF transmitting signal to the shaped reflector, wherein the triple-active feed array including Ka / K bands feed array for transceiving Ka / K bands RF signal and a Ku band feed array for receiving a Ku band RF signal.

Sample adaptive offset (SAO) in accordance with video coding. SAO filtering may be performed before e-blocking processing (e.g., in accordance with video signal decoding and / or encoding). For example, a receiver and / or decoder communication device may receive signaling from a transmitter and / or encoder communication device that includes various band offsets. Corresponding band indices may be determined via analysis of the received video signal (e.g., received from the transmitter and / or encoder communication device), inferentially without requiring signaling of such band indices from the transmitter and / or encoder communication device. Upon appropriate analysis of one or more largest coding units (LCUs) generated from the video signal to determine a pixel value distribution (e.g., which may be using a histogram in one instance), then based on that pixel value distribution, the band indices are identified and the band offsets applied thereto.

A photoelectrochemical regenerative photovoltaic cell is provided that includes an electrode structure having a semiconductor photoelectrode layer, and a pinhole-free metal oxide layer disposed on the semiconductor photoelectrode layer forming the electrode structure, where the pinhole-free metal oxide layer is less than 10 nm in thickness, where the thickness of the pinhole-free metal oxide layer protects the semiconductor photoelectrode layer from i) oxidation, ii) dissolution, or i) and ii) when in contact with an electrolyte solution, where the pinhole-free metal oxide layer has a band gap that is transparent to solar radiation and provides band offsets that permit facile electron or hole transport between the electrolyte solution and the semiconducting photoelectrode.

A method for signaling sample adaptive offset (SAO) band offset syntax elements in a video encoder is provided that includes receiving a plurality of band offset syntax elements, entropy encoding an absolute value of a magnitude of each band offset syntax element in a compressed video bit stream, and entropy encoding a sign of each non-zero band offset syntax element in the compressed video bit stream following the absolute values of the magnitudes.

The invention discloses a light emitting diode with an electronic barrier layer structure. The forbidden band width and lattice constant of a quaternary nitride InxAlyGa1-x-yN can be independently adjusted, the In and Al ingredients in p-InxAlyGa1-x-yN are adjusted to match with the lattice between GaN in a binary nitride or a ternary nitride or a InGaN / GaN multi-quantum well and the GaN in a p type GaN epitaxial layer so as to obtain high energy band gap value and energy band offset ratio, effectively reduce the electron leakage rate and improve the injection efficiency of holes, thereby greatly improving the light emission efficiency and ESD yield of LED devices.

The invention discloses an atomic layer deposition Al2O3 / HfO2 method for regulating an energy band offset between a GaAs semiconductor and a gate dielectric. The method comprises the following steps of: firstly, cleaning a GaAs substrate to remove oil stains and oxide layers; secondly, immersing the cleaned GaAs substrate in aqueous solution of (NH4)2S to form Ga-S and As-S bonds on the surface of the GaAs substrate and further remove an unnecessary As elementary substance and As oxides; and finally, placing the passivated GaAs substrate into an ALD reaction chamber immediately to perform deposition of a HfO2 / Al2O3 nano laminated film. The method optimizes and improves the interface property between the gate dielectric and the GaAs substrate, regulates the energy band offset between n-GaAs and a gate dielectric film, and improves the electrical properties of the gate dielectric film by changing the Al / Hf proportion, and has the advantages of simple process and important application prospect in preparation of GaAs-based MOSFETs.

A method and apparatus for encoding or decoding SAO (sample adaptive offset) parameters in a video encoder or decoder are disclosed. Embodiments according to the present invention encode or decode signs and magnitudes of SAO offset values separately for a region using band offset, where the signs are coded using bypass mode coding or fixed length coding. In one embodiment, the magnitudes of the SAO offset values for a region are grouped and coded together. If the SAO type is not band offset, the signs of the SAO offset values are omitted from the compressed data associated with the region. In another embodiment, the magnitude of the SAO offset value for band offset is checked to determine whether it is zero. If the magnitude of the SAO offset value is zero, there is no need to incorporate the sign of the SAO offset value in the compressed data.

Systems and methods for improving the temperature performance of AlInGaP based light emitters. Nitrogen is added to the quantum wells in small quantities. Nitrogen is added in a range of about 0.5 percent to 2 percent. The addition of nitrogen increases the conduction band offset and increases the separation of the indirect conduction band. To keep the emission wavelength in a particular range, the concentration of In in the quantum wells may be decreased or the concentration of Al in the quantum wells may be increased. Because the depth of the quantum wells in the valence band is more than is required although the addition of nitrogen reduces the depth of the quantum wells in the valence band. The net result is an increase in the conduction band offset and an increase in the separation of the indirect conduction band.

The invention relates to an I2-II-IV-VI4 base thin film solar battery, which belongs to the field of new energy resources of solar batteries. The invention uses a p type I2-II-IV-VI4 base semiconductor thin film as a light absorbing layer, uses a thin film homogeneous with the light absorbing layer as a buffer layer, and optimizes the band offsets of the p-n node energy bands. A high-work-function double-layer composite thin film is used as a bottom electrode of the battery, and the contact barrier between the light absorbing layer and the bottom electrode is eliminated. A ZnS semiconductor thin film with wide band gap is used as a window layer, the light utilization efficiency of the battery is improved. The I2-II-IV-VI4 base thin film solar battery provided by the invention has the advantages of rich raw materials and low price, and has excellent device structures.

An optical spectrum monitor includes a tunable optical detector that receives optical channel monitoring signals from an optical channel and receives a control signal that selects a frequency of an optical channel monitoring signal for detection. The tunable optical detector detects the optical channel monitoring signal selected by the control signal and generates an electrical signal related to a power of the detected optical channel monitoring signal. A processor analyzes a plurality of differences between selected optical channel monitoring frequencies and their corresponding ITU frequencies and then generates the control signal at the output that corrects for at least one of systematic band offset and systematic band tilt in the optical channel monitoring frequency.

Sample adaptive offset (SAO) in accordance with video coding. SAO filtering can be performed before e-blocking processing (e.g., in accordance with video signal decoding and / or encoding). For example, a receiver and / or decoder communication device can receive signaling from a transmitter and / or encoder communication device that includes various band offsets. Corresponding band indices can be determined via analysis of the received video signal (e.g., received from the transmitter and / or encoder communication device), inferentially without requiring signaling of such band indices from the transmitter and / or encoder communication device. Upon appropriate analysis of one or more largest coding units (LCUs) generated from the video signal to determine a pixel value distribution (e.g., which may be using a histogram in one instance), then based on that pixel value distribution, the band indices are identified and the band offsets applied thereto.

A crystalline oxide-on-semiconductor structure and a process for constructing the structure involves a substrate of silicon, germanium or a silicon-germanium alloy and an epitaxial thin film overlying the surface of the substrate wherein the thin film consists of a first epitaxial stratum of single atomic plane layers of an alkaline earth oxide designated generally as (AO)n and a second stratum of single unit cell layers of an oxide material designated as (A'BO3)m so that the multilayer film arranged upon the substrate surface is designated (AO)n(A'BO3)m wherein n is an integer repeat of single atomic plane layers of the alkaline earth oxide AO and m is an integer repeat of single unit cell layers of the A'BO3 oxide material. Within the multilayer film, the values of n and m have been selected to provide the structure with a desired electrical structure at the substrate / thin film interface that can be optimized to control band offset and alignment.

The invention discloses a wide-band gap multi-heterojunction tunnel junction structure, which comprises four functional layers from the first to the fourth, wherein the first functional layer is provided with a first band gap and a first type doping; the second functional layer is provided with a second band gap smaller than the first band gap and the first type doping; the third functional layer is provided with a third band gap and a second type doping; and the fourth functional layer is provided with a fourth band gap larger than the third band gap and the second type doping. Due to the adoption of the structure provided by the invention, the problem that the peak current density of the wide-band tunnel junction in the prior art is low is solved, four functional layers are adopted to form the tunnel junction structure, and hetero junctions are formed among the functional layers, so that the peak tunneling current can be improved either by the band offset of a pN type or nP type heterojunction structure, or by the carrier compensation, which is realized through the injection effect of a carrier of a Pp type or Nn type heterojunction structure, and accordingly, the series resistance value is smaller. Therefore, the wide-band gap multi-heterojunction tunnel junction structure can be applied to a high-power concentrator solar cell.

In one aspect of the presently described embodiments, the system comprises an inlet to receive at least a portion of the fluid containing algae, a curved channel within which the fluid containing algae flows in a manner such that the neutrally buoyant algae flow in a band offset from a center of the curved channel, a first outlet for the fluid with algae within which the band flows, and, a second outlet for the remaining fluid.

Methods and apparatus for reducing transmit emissions are described herein. The transmit out of band emissions in an adjacent band can be reduced while complying with existing wireless communication standards through utilization of one or more of reduced transmit bandwidth, transmit operating band offset, and channel index remapping. The transceiver can support a receive operating band that is substantially adjacent to a band edge. The transmit operating band can be offset from an adjacent frequency band, and can use a narrower operating band than is supported by the receiver. The transmit baseband signal can have a reduced bandwidth to reduce the amount of noise. The frequency offset can introduce a larger transition band between the transmit operating band edges and the adjacent frequency band of interest. The transceiver can remap channel assignments to compensate for the frequency offset such that the frequency offset introduced in the transmitter is transparent to channel allocation.

The invention provides an optimization and demodulation method of multiple offset carrier wave amplitude modulation signals and aims at providing a method capable of selecting an amplitude modulation signal with a highest carrier-to-noise ratio from the multiple offset carrier wave amplitude modulation signals to carry out correct demodulation and simultaneously restraining other offset carrier wave signals. A technical scheme is characterized by in an offset carrier wave communication system, an analog-digital conversion chip carries out band-pass sampling on an intermediate frequency signal output by a receiver and the signal is converted into a baseband signal after digital down conversion; then, N point FFT and frequency spectrum correction are performed on the baseband signal, and through searching a maximum value of a frequency spectrum amplitude, a frequency offset amount of an optimum carrier wave is determined; and then through a frequency offset correction and low pass filtering method, other out-of-band offset carrier wave amplitude modulation signals are filtered so as to reduce an interference; and finally, amplitude modulation demodulation is performed and a voice signal is recovered. By using the method in the invention, the interference can be reduced and one voice signal with best quality can be correctly demodulated.

Techniques to use energy band gap engineering (or band offset engineering) to produce a photodetector semiconductor assembly that can be tuned to absorb light in one or more wavelengths. For example, the assembly can be tuned to receive infrared (IR) and / or ultraviolet (UV) light. The photodetector assembly can operate as a photodiode, a phototransistor, or can include both a photodiode and a phototransistor.

A boundary interpolation method is described for use with band offsets (BO) and largest coding units (LCU) within a video encoder. In BO, for example, very different offsets could otherwise be added to neighboring pixels which result in large discontinuities and visual artifacts. An interpolation, such as linear, is performed between the BO, or the periphery of the LCU, or a combination thereof, to smooth the offset function toward preventing introduction of visual artifacts.

A multi-layer semiconductor structure is disclosed for use in III-Nitride semiconductor devices, including a channel layer, a band-offset layer having a wider bandgap than the channel layer, a spacer layer having a narrower bandgap than the band-offset layer, and a cap layer comprising at least two sublayers. Each sublayer is selectively etchable with respect to sublayers immediately below and above, each sublayer comprises a III-N material AlxInyGazN in which 0≦x≦1, 0≦y≦1, and 0≦z≦1, at least one sublayer has a non-zero Ga content, and a sublayer immediately above the spacer layer has a wider bandgap than the spacer layer. Also described are methods for fabricating such semiconductor structures, with gate and / or ohmic recesses formed by selectively removing adjacent layers or sublayers. The performance of resulting devices is improved, while providing design flexibility to reduce production cost and circuit footprint.