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Wide-band gap multi-heterojunction tunnel junction structure

A multi-heterojunction and tunneling junction technology, which is applied in the field of wide-bandgap multi-heterojunction tunneling junction structures, can solve the problems of low peak current density of wide-bandgap tunneling junctions, etc. The effect of resistance

Inactive Publication Date: 2012-10-03
XIAMEN CHANGELIGHT CO LTD
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Problems solved by technology

[0004] In order to solve the problem of low peak current density of the wide bandgap tunneling junction, the purpose of the present invention is to provide a wide bandgap multi-heterojunction tunneling junction structure to increase the peak tunneling current and meet the application of high-power concentrating solar cells

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Embodiment Construction

[0014] The first embodiment of the present invention is as figure 1 As shown, there are first bandgap subcell 11, first functional layer 12, second functional layer 13, third functional layer 14, fourth functional layer 15, second bandgap subcell 16 and hat layer 17. The substrate 10 is Ge or GaAs. The first bandgap subcell 11 is a PN-type homojunction or heterojunction composed of one or more materials such as GaAs, GaInAs, GaInNAs, GaInNAsSb, GaInAsP, AlGaAs, AlGaAsP, AlGaInAs, GaInP, AlGaInP. The first functional layer 12 is made of AlGaInP, the Al composition is 0.85, doped with Si, the thickness is 20-100nm, and the doping concentration is 1×10 19 cm -3 ; The second functional layer 13 is made of AlGaInP, the Al composition is 0.15, the doping is Si, the thickness is 10-20nm, and the doping concentration is 5×10 19 cm -3 ; The third functional layer 14 is composed of AlGaAs, the Al composition is 0.15, the doping is C, the thickness is 10-20nm, and the doping concent...

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Abstract

The invention discloses a wide-band gap multi-heterojunction tunnel junction structure, which comprises four functional layers from the first to the fourth, wherein the first functional layer is provided with a first band gap and a first type doping; the second functional layer is provided with a second band gap smaller than the first band gap and the first type doping; the third functional layer is provided with a third band gap and a second type doping; and the fourth functional layer is provided with a fourth band gap larger than the third band gap and the second type doping. Due to the adoption of the structure provided by the invention, the problem that the peak current density of the wide-band tunnel junction in the prior art is low is solved, four functional layers are adopted to form the tunnel junction structure, and hetero junctions are formed among the functional layers, so that the peak tunneling current can be improved either by the band offset of a pN type or nP type heterojunction structure, or by the carrier compensation, which is realized through the injection effect of a carrier of a Pp type or Nn type heterojunction structure, and accordingly, the series resistance value is smaller. Therefore, the wide-band gap multi-heterojunction tunnel junction structure can be applied to a high-power concentrator solar cell.

Description

technical field [0001] The invention relates to a wide-bandgap multi-heterojunction tunneling junction structure, which is a tunneling junction structure for high-power concentrating gallium arsenide multi-junction solar cells connected in series. technical background [0002] Gallium arsenide multi-junction solar cells are composed of several sub-cells with different band gaps connected in series, and each sub-cell is a p-n structure. If they are directly connected in series, the contact interface of the sub-cells will form a reverse-biased p-n junction, resulting in mutual voltage. Offset and not conductive. This problem can be solved by using tunneling junction connection. The tunnel junction is also a p-n structure, which is characterized by a thin functional layer and a very high doping concentration. The Fermi level enters the valence and conduction bands of the P region and the N region respectively. When there is sunlight, the two ends of the tunnel junction When a...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0352H01L31/0304
Inventor 单智发张永蔡建九陈凯轩林志伟
Owner XIAMEN CHANGELIGHT CO LTD
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