The invention discloses an IGBT (insulated gate bipolar translator) device with a high-temperature self-protection function, belonging to the technical field of power semiconductor devices. According to the invention, deep-energy-level impurities (12) with an acceptor energy level are introduced in a channel region (A) close to a polysilicon gate electrode (9) in the P-type base region (5) of the traditional IGBT device, and the deep-energy-level impurities (12) have a low ionization rate at a normal temperature, and little influence on the threshold voltage of the device. In the case that the device works under a large current, the temperature of the device rises, the ionization rate of the deep-energy-level impurities (12) is greatly increased, that is, the effective doping level of the P-type base region (5) is increased, so that the threshold voltage of the device is greatly increased, the saturation current value of the IGBT device and the negative temperature coefficient of the forward voltage drop of the device are decreased, and a purposes of further optimizing the negative temperature coefficient of the forward voltage drop of the IGBT device is achieved under the action of the dual mechanisms. The failure of the device due to the too high temperature caused by the own generated heat loss is avoided, so that the device has a high-temperature self-protection function.