Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

I2-II-IV-VI4 base thin film solar battery

A thin-film solar cell, I2-II-IV-VI4 technology, applied in circuits, electrical components, photovoltaic power generation, etc., can solve the problems of low efficiency of base thin-film solar cells, unoptimized device structure, insufficient ohmic contact, etc. , to achieve the effect of improving light utilization efficiency, improving charge collection capacity, and high photoelectric conversion efficiency

Active Publication Date: 2010-09-29
山东中科泰阳光电科技有限公司
View PDF3 Cites 16 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

cause the current I 2 -II-IV-VI 4 An important reason for the low efficiency of thin-film solar cells is that the device structure has not been optimized well. 2 -II-IV-VI 4 Insufficient ohmic contact between the base light-absorbing layer and the bottom electrode, and poor band-level matching between the buffer layer and the window layer will cause a significant decline in battery performance.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • I2-II-IV-VI4 base thin film solar battery
  • I2-II-IV-VI4 base thin film solar battery

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0023] The preparation of the window layer ZnS thin film usually adopts the chemical bath deposition method, and can also adopt the sputtering method or the electron beam deposition method. The thickness of the window layer film is 50 nm to 200 nm.

[0024] The transparent conductive layer is ZnO:Al or In 2 O 3 : Sn, generally prepared by magnetron sputtering, with a thickness of 100nm to 1500nm.

[0025] The interdigitated metal electrode is a Ni / Al double-layer electrode, which is generally prepared by evaporation method, and can also be prepared by sputtering method, wherein the thickness of Ni is 5nm-50nm, and the thickness of Al is 500nm-2500nm.

[0026] Anti-reflection coating is MgF 2 , which is generally prepared by evaporation method, and can also be prepared by sputtering method, with a thickness of 50 nm to 500 nm.

Embodiment 1

[0029] Substrate: The substrate is made of ordinary soda lime glass with a thickness of 2mm.

[0030] Bottom electrode: Cu 0.5 Zn 0.5 Te / Mo bilayer composite film, prepared by magnetron sputtering method, in which the sputtering power density of Mo is 5Wcm -2 , Cu 0.5 Zn 0.5 The sputtering power density of Te is 1.5Wcm -2 , where the Mo film thickness is 800 nm, the Cu 0.5 Zn 0.5 The thickness of the Te film was 50 nm.

[0031] Light absorption layer: The light absorption layer adopts Cu 1.6 Zn 1.1 Sn 0.9 S 1.6 Se 2.4 The semiconductor thin film, the absorption layer was prepared by co-sputtering Cu, ZnS, SnS to prepare a precursor film with a thickness of 1000 nm, and then heat treatment at 570 °C for 30 min in an atmosphere of S and Se to form a Cu with a thickness of 1200 nm. 1.6 Zn 1.1 Sn 0.9 S 1.6 Se 2.4 semiconductor thin film.

[0032] Buffer layer: ZnS film with a thickness of 20 nm and SnS film with a thickness of 5 nm were prepared by sputtering on t...

Embodiment 2

[0039] Substrate: The substrate is made of ordinary soda lime glass with a thickness of 2mm.

[0040] Bottom electrode: Cu 0.6 Zn 0.4 Te / Mo bilayer composite film, prepared by magnetron sputtering method, in which the sputtering power density of Mo is 5Wcm -2 , Cu 0.6 Zn 0.4 The sputtering power density of Te is 1.5Wcm -2 , where the Mo film thickness is 1200 nm, the Cu 0.6 Zn 0.4 The thickness of the Te film was 20 nm.

[0041] Light absorption layer: The light absorption layer adopts Cu 1.6 ZnCd 0.1 Sn 0.9 S 3.2 Se 0.8 The semiconductor thin film, the absorption layer is prepared by the organic colloid solution method, the iodide of Cu, Zn, Cd, Sn is dissolved in the organic solvent of alcohol amine multifunctional group, and then anhydrous ammonium sulfide and anhydrous ammonium selenide are added to form The organic colloid source solution of Cu, Zn, Cd, Sn, S and Se was then cast to form a film, dried at 350 °C for 5 min, and heat-treated at 580 °C for 30 min ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to an I2-II-IV-VI4 base thin film solar battery, which belongs to the field of new energy resources of solar batteries. The invention uses a p type I2-II-IV-VI4 base semiconductor thin film as a light absorbing layer, uses a thin film homogeneous with the light absorbing layer as a buffer layer, and optimizes the band offsets of the p-n node energy bands. A high-work-function double-layer composite thin film is used as a bottom electrode of the battery, and the contact barrier between the light absorbing layer and the bottom electrode is eliminated. A ZnS semiconductor thin film with wide band gap is used as a window layer, the light utilization efficiency of the battery is improved. The I2-II-IV-VI4 base thin film solar battery provided by the invention has the advantages of rich raw materials and low price, and has excellent device structures.

Description

technical field [0001] The present invention relates to a kind of thin film solar cell, specifically refers to a kind of 2 -II-IV-VI 4 A thin-film solar cell in which the base p-type compound semiconductor thin film is a light absorbing layer. Background technique [0002] The energy environment is closely related to the survival and development of human society. With the process of economic globalization, energy and environmental issues have become an urgent problem facing the world. The development and utilization of clean, abundant and unrestricted solar energy is the only way to solve energy and environmental problems. Solar cells are one of the most efficient forms of human utilization of solar energy, and have achieved extremely rapid development in recent years. However, solar cells have truly achieved large-scale promotion and application, and replaced traditional fossil energy as the mainstream of future energy composition. It is necessary to vigorously develop n...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/068H01L31/0224H01L31/18H01L31/06
CPCY02E10/50H01L31/0326Y02E10/547
Inventor 黄富强王耀明
Owner 山东中科泰阳光电科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com