The invention discloses an MSM type deep
ultraviolet photoelectric
detector based on a cubic
boron nitride thick film and a preparation method. The MSM type deep
ultraviolet photoelectric
detector comprises a substrate, a
boron nitride buffer layer which is positioned on the substrate, a cubic
boron nitride thick film which is positioned on the
boron nitride buffer layer, and a pair of electrodeswhich are respectively stacked on the cubic
boron nitride thick film. The electronic characteristics of the cubic
boron nitride ultra-wide forbidden band, the stability in an
extreme environment and other remarkable material performance advantages are utilized, the cubic boron nitride ultra-wide forbidden band is used as a light
absorption layer, the photoelectric response of the device in a deepultraviolet region can be directly obtained, the
dark current is low, the sensitivity is high, and the response speed is high; the MSM type deep
ultraviolet photoelectric
detector can be applied to extreme environments with high temperature,
high pressure,
high energy radiation and corrosivity, and has very high practical value in the fields of
aerospace and information communication; the detectorcan be directly manufactured on a
silicon-based substrate and can be compatible with an existing
silicon-based process, device integration is facilitated, the process is simple, and large-scale industrialization is facilitated.