1425results about How to "Control length" patented technology

The invention is based on the use of polyisobutylmethacrylate instead of PMMA as an adhesive or spinal fill material for treating diseases of the spine. Polyisobutylmethacrylate has several advantages over PMMA, mainly less heat is developed during the in situ polymerization process. When using any spinal adhesive of fill material that is light activated, a tube can be used to transmit activating light to the light-activated adhesive or spinal polymerizable fill material at the surgical site. In addition, a mesh bag comprising optical fibers or similar light transmitting material can be employed to receive the injected light-activated fill, with the mesh bag, irradiated externally, for directing the light via the bag to the polymerizable fill.

The invention provides a method for removing cracks of Rene104 nickel-based superalloy during laser additive manufacturing, and belongs to the fields of additive manufacturing and superalloy. Aiming at solving the problem that cracks are liable to occur to Rene104 nickel-based superalloy with a high Al content and a high Ti content (Al+Ti>5%) during laser additive manufacturing, by designing laserforming parameters and sub-regional scanning strategies, generation of large-size cracks in a formed part is suppressed; then stress relief annealing is used for completely removing residual stress in the formed part; and discharge plasma sintering treatment is adopted for removing the cracks in the formed part, and grain growth during the sintering process is suppressed. The scheme that after the formed part is obtained through laser additive manufacturing, in combination with stress relief annealing and discharge plasma sintering treatment, the cracks in the formed part are removed is proposed for the first time. By using the method for preparing the Rene104 nickel-based superalloy with the high Al content and high Ti content, no cracks are found in the formed part, and the tensile strength of the formed part at the room temperature can reach 1300 MPa or higher.

The present invention generally provides improved medical devices, systems, and methods. Embodiments may be particularly well suited for the treatment of dermatological and / or cosmetic defects, and alternative embodiments may be configured for treatment of a wide range of target tissues. Some embodiments of the present invention apply cooling with at least one small, tissue-penetrating probe, the probe often comprising a needle having a size suitable for inserting through an exposed surface of the skin of a patient without leaving a visible scar. The cooling may remodel one or more target tissue so as to effect a desired change in a composition of the target tissue and / or a change in its behavior. Exemplary embodiments make use of replaceable needle probes supported by a probe body handle, with small needle probes often being replaced during treatment of a single patient. Unlike the large format cryogenic cooling systems of the past, small cryogenic cooling needle probes may dull or be damaged by insertion. Careful control over the control of cryogenic cooling fluid into a needle probe can allow the length of the active cooling to be controlled through depletion of liquid from an evaporating cryogenic cooling flow. Hence, even needles having similar external structures may provide differing lengths of an iceball along the needle axis. Surprisingly, small cryogenic cooling needles and / or other cryogenic cooling probes having a lubricious coating will allow safe removal of the probe from the treatment region while at a least a portion of the tissue remains frozen, significantly decreasing the overall time for a procedure involving many insertion / freeze / removal cycles.

JFET and MESFET structures, and processes of making same, for low voltage, high current and high frequency applications. The structures may be used in normally-on (e.g., depletion mode) or normally-off modes. The structures include an oxide layer positioned under the gate region which effectively reduces the junction capacitance (gate to drain) of the structure. For normally off modes, the structures reduce gate current at Vg in forward bias. In one embodiment, a silicide is positioned in part of the gate to reduce gate resistance. The structures are also characterized in that they have a thin gate due to the dipping of the spacer oxide, which can be below 1000 angstroms and this results in fast switching speeds for high frequency applications.