Method for growing single crystal [gamma]-phase indium selenide film on mica substrate

A technology for growing single crystals and indium selenide, which is applied in the fields of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of high preparation costs and achieve the effect of small chemical force and high surface mobility

Active Publication Date: 2019-10-15
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] For the current growth of single crystal γ-In 2 Se 3 There are many difficulties in thin film technology, and the problem of high preparation cost. The present invention provides a method to grow and prepare single crystal γ-In on a cheap mica substrate by using molecular beam epitaxy technology. 2 Se 3 The thin film method, through a relatively simple means, first obtains a clean mic

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  • Method for growing single crystal [gamma]-phase indium selenide film on mica substrate
  • Method for growing single crystal [gamma]-phase indium selenide film on mica substrate
  • Method for growing single crystal [gamma]-phase indium selenide film on mica substrate

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Embodiment 1

[0025] Such as figure 1 As shown, the present invention is a method for growing a single crystal γ-phase indium selenide thin film on a mica substrate, specifically comprising the following steps:

[0026] Step 1): Carry out chemical cleaning and mechanical cleavage to peel off the surface layer of the single crystal mica substrate to obtain a flat mica substrate with a clean surface. In the example, ultrasonic cleaning with acetone for 3 minutes, ultrasonic cleaning with alcohol for 3 minutes, and repeated ultrasonic cleaning for 3 rounds ;

[0027] Step 2): The mica substrate prepared in step 1) is introduced into the molecular beam epitaxy vacuum system and heated for degassing. When the maximum degassing temperature is 450°C, stop heating, and degass until the pressure of the molecular beam epitaxy vacuum system reaches 5 ×10 -10 mbar, stop degassing;

[0028] Step 3): After cooling to the growth temperature of 200°C, turn on the In source and the Se source in the molec...

Embodiment 2

[0039] The invention is a method for growing a single crystal γ-phase indium selenide thin film on a mica substrate, which specifically includes the following steps:

[0040] Step 1): Carry out chemical cleaning and mechanical cleavage to peel off the surface layer of the single crystal mica substrate to obtain a flat mica substrate with a clean surface. In the example, ultrasonic cleaning with acetone for 4 minutes and alcohol ultrasonic cleaning for 4 minutes, repeated ultrasonic cleaning for 3 rounds ;

[0041] Step 2): Put the mica substrate prepared in step 1) into the molecular beam epitaxy vacuum system and heat to degas. When the maximum degassing temperature is 450°C, stop heating, and degas until the pressure of the molecular beam epitaxy vacuum system reaches 2.5 ×10 -10 mbar, stop degassing;

[0042] Step 3): After cooling to the growth temperature of 230°C, turn on the In source and the Se source in the molecular beam epitaxy vacuum system, where the equivalent ...

Embodiment 3

[0049] The invention is a method for growing a single crystal γ-phase indium selenide thin film on a mica substrate, which specifically includes the following steps:

[0050] Step 1): Carry out chemical cleaning and mechanical cleavage to peel off the surface layer of the single crystal mica substrate to obtain a flat mica substrate with a clean surface. In the example, ultrasonic cleaning with acetone for 5 minutes and alcohol ultrasonic cleaning for 5 minutes, repeated ultrasonic cleaning for 3 rounds ;

[0051] Step 2): Put the mica substrate prepared in step 1) into the molecular beam epitaxy vacuum system and heat it to degas. ×10 -10 mbar, stop degassing;

[0052] Step 3): After cooling to the growth temperature of 250°C, turn on the In source and the Se source in the molecular beam epitaxy vacuum system, where the equivalent pressure of the In beam is 1×10 -7 mbar, Se beam equivalent pressure is 1×10 -6 mbar, set the Se cracking temperature to 450°C, and the Se:In b...

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Abstract

The invention relates to a method for growing a single crystal [gamma]-phase indium selenide film on a mica substrate. The method comprises the following steps of: the step 1) chemically cleaning andmechanically cleaving a single crystal mica substrate to peel off a surface layer to obtain a flat mica substrate with a clean surface; the step 2) transferring the mica substrate prepared in the step1) into a molecular beam epitaxy vacuum system, performing heating to a temperature of 450 DEG C, and performing degassing until the vacuum degree of the system is better than 8*10 <-10> mbar; the step 3) after the mica is degassed, performing natural cooling to a growth temperature range, and simultaneously opening an In beam flow source and a Se beam flow source to start to grow an In2Se3 film;and the step 4) immediately stopping heating the substrate after the film growth is finished, and quickly cooling the substrate to a room temperature to obtain the single crystal [gamma]-phase In2Se3film. According to the method for growing the In2Se3 film, the In2Se3 film is deposited and grown on the surface of the mica substrate by utilizing a molecular beam epitaxy technology, and the high-quality single crystal [gamma]-phase In2Se3 film can be prepared at a lower growth temperature.

Description

technical field [0001] The invention belongs to the field of semiconductor materials and provides a method for growing a single-crystal gamma-phase indium selenide thin film on a mica substrate. In particular, it is a method for growing single-crystal γ-phase indium selenide film material on a mica substrate at a relatively low temperature by using molecular beam epitaxy technology. Background technique [0002] Indium selenide (chemical formula: In 2 Se 3 ) is an important class of Group III-VI layered semiconductor materials with direct bandgap. Five main crystal phases have been found, namely: α, β, γ, δ and κ. Indium selenide thin film materials have been widely used in solar cells, light detection, and phase change memory. The γ-phase indium selenide (hereinafter referred to as γ-In 2 Se 3 ) due to its excellent optical activity and ferroelectricity, its thin film structure is more promising in the development of photoelectric and ferroelectric functional devices. ...

Claims

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Application Information

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IPC IPC(8): H01L21/02
CPCH01L21/0242H01L21/02568H01L21/02609H01L21/02598H01L21/02631H01L21/02658
Inventor 李含冬尹锡波徐超凡贺靖姬海宁牛晓滨王志明
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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