Method for growing single crystal [gamma]-phase indium selenide film on mica substrate

Abstract

The invention relates to a method for growing a single crystal [gamma]-phase indium selenide film on a mica substrate. The method comprises the following steps of: the step 1) chemically cleaning andmechanically cleaving a single crystal mica substrate to peel off a surface layer to obtain a flat mica substrate with a clean surface; the step 2) transferring the mica substrate prepared in the step1) into a molecular beam epitaxy vacuum system, performing heating to a temperature of 450 DEG C, and performing degassing until the vacuum degree of the system is better than 8*10 <-10> mbar; the step 3) after the mica is degassed, performing natural cooling to a growth temperature range, and simultaneously opening an In beam flow source and a Se beam flow source to start to grow an In2Se3 film;and the step 4) immediately stopping heating the substrate after the film growth is finished, and quickly cooling the substrate to a room temperature to obtain the single crystal [gamma]-phase In2Se3film. According to the method for growing the In2Se3 film, the In2Se3 film is deposited and grown on the surface of the mica substrate by utilizing a molecular beam epitaxy technology, and the high-quality single crystal [gamma]-phase In2Se3 film can be prepared at a lower growth temperature.

Description

technical field [0001] The invention belongs to the field of semiconductor materials and provides a method for growing a single-crystal gamma-phase indium selenide thin film on a mica substrate. In particular, it is a method for growing single-crystal γ-phase indium selenide film material on a mica substrate at a relatively low temperature by using molecular beam epitaxy technology. Background technique [0002] Indium selenide (chemical formula: In 2 Se 3 ) is an important class of Group III-VI layered semiconductor materials with direct bandgap. Five main crystal phases have been found, namely: α, β, γ, δ and κ. Indium selenide thin film materials have been widely used in solar cells, light detection, and phase change memory. The γ-phase indium selenide (hereinafter referred to as γ-In 2 Se 3 ) due to its excellent optical activity and ferroelectricity, its thin film structure is more promising in the development of photoelectric and ferroelectric functional devices. ...

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Problems solved by technology

[0003] For the current growth of single crystal γ-In 2 Se 3 There are many difficulties in thin film technology, and the problem of high preparation cost. The present invention provides a method to grow and prepare single crystal γ-In on a cheap mica substrate by using molecular beam epitaxy technology. 2 Se 3 The thin film method, through a relatively simple means, first obtains a clean mica surface, and then implements γ-In on the mica surface 2 Se 3 The epitaxial growth of the film, in which the Se source uses a high-temperature cracking source to further increase the reactivity of the Se beam, so that the reaction nucleation barrier between In and Se molecules can be reduced during the growth process, and the Se beam required for growth can be reduced. purpose of consumption

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