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Sandwich-structure thin film, preparation method and application thereof

A sandwich and thin-film technology, which is applied in vacuum evaporation plating, coating, ohmic resistance heating, etc., can solve the problems of low performance of sandwich-structured thin films, and achieve the effects of rapid response, excellent photoelectric performance and high efficiency

Active Publication Date: 2018-08-28
SHENZHEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the above deficiencies in the prior art, the purpose of the present invention is to provide a sandwich structure film and its preparation method and application, aiming to solve the problem of low performance of the existing sandwich structure film

Method used

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  • Sandwich-structure thin film, preparation method and application thereof
  • Sandwich-structure thin film, preparation method and application thereof
  • Sandwich-structure thin film, preparation method and application thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0062] A sandwich structure film with the structure of AZO(58nm) / Au(10nm) / AZO(62nm) / mica was prepared.

[0063] A 6 μm single-crystal flexible high-temperature-resistant mica substrate was obtained by mechanical stripping. The mica substrate was cleaned with nitrogen gas, coated with silver glue on the back of the mica, and the mica sheet was fixed on the substrate holder and installed in the cavity. The 99.9999wt% Au target and the 99.99wt% AZO target were fixed on a rotatable target stage in the cavity of the pulsed laser deposition device.

[0064] Adjust the target-base distance (the distance between the target and the substrate) to 60mm, and use the mechanical pump and the molecular pump to pump the gas in the chamber successively, so that the vacuum degree of the back and the bottom reaches 1×10 -4 Pa, then heat the mica substrate to 200°C at a heating rate of 20°C / min, open the oxygen inlet valve to pass ultra-pure oxygen into the chamber, adjust the oxygen inlet microf...

Embodiment 2

[0070] A sandwich structure film with the structure of AZO(58nm) / Au(2-18nm) / AZO(62nm) / mica was prepared.

[0071] According to the preparation process of Example 1, an AZO film with a thickness of 62nm, an Au film with a thickness of 2-18nm, and an AZO film with a thickness of 58nm are prepared successively on the mica substrate, wherein the thickness of the Au film is controlled to be 2, 4, 6, 8, 10, 12, 14, 16, 18nm, a series of sandwich structure films with different Au film thicknesses were prepared.

[0072] image 3 The square resistance of the sandwich structure film prepared for this example varies with the thickness of the interlayer Au film. like image 3 As shown, the average visible light transmittance of the square resistance of the sandwich structure film gradually decreases with the increase of the thickness of the Au film, and the square resistance decreases accordingly; when the thickness of the interlayer Au film increases from 2nm to 6nm, the sandwich stru...

Embodiment 3

[0074] Preparation of sandwich structure film with structure ZnO (58nm) / Ag(10nm) / ZnO (62nm) / mica

[0075] A 6 μm single-crystal flexible high-temperature-resistant mica substrate was obtained by mechanical stripping, and the mica substrate was cleaned with nitrogen; the Ag target and the ZnO target were fixed in the magnetron sputtering chamber, and the mica substrate was placed in the magnetron sputtering chamber Adjust the distance between the mica substrate and the target to 50 mm on the rotating heating stage.

[0076] Vacuumize the magnetron sputtering chamber and fill it with argon gas to clean the target material. When the air pressure reaches 10Pa, turn the mica substrate to the corresponding position of the ZnO target material, turn on the radio frequency power supply, and sputter the ZnO target material onto the mica substrate Above, a lower ZnO thin film with a thickness of 62nm was prepared.

[0077] Adjust the intake and exhaust volume, when the vacuum reaches 3×...

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Abstract

The invention discloses a sandwich-structure thin film, a preparation method and application thereof, wherein the sandwich-structure thin film comprises a mica substrate, and a lower-layer oxide thinfilm, an interlayer metal thin film and an upper-layer oxide thin film which are arranged on the mica substrate. The sandwich-structure thin film disclosed by the invention is low in surface roughnessand excellent in photoelectric property, is rapid in response and high in efficiency when being used as a thin-film heater, and also can be used for electrodes of other electronic devices, so that the application prospect is wide.

Description

technical field [0001] The invention relates to the field of conductive thin films, in particular to a sandwich structure thin film and its preparation method and application. Background technique [0002] At present, ITO is the most widely used transparent conductive material for preparing transparent electrodes. Although ITO film has high transmittance (~90%) and low square resistance (~10Ω / sq), its application is greatly limited due to its low mechanical strength and high cost. Scientists from various countries have explored many materials to replace ITO, such as graphene, carbon nanotubes, and metal nanowires. However, the above-mentioned new materials have defects such as low electrical conductivity and poor chemical stability. An oxide / metal / oxide (O / M / O) sandwich structure film with good chemical stability, uniform square resistance, and low cost was born accordingly. [0003] (O / M / O) sandwich structure films have broad application prospects in the field of transpa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/08C23C14/18C23C14/24C23C14/28C23C14/35C23C14/50H05B3/34
CPCC23C14/08C23C14/185C23C14/24C23C14/28C23C14/352C23C14/505H05B3/34
Inventor 周华谢静柯善明
Owner SHENZHEN UNIV
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