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Method for preparing bismuth selenide nanosheet on mica substrate by controlling gas flow

A technology for controlling gas and bismuth selenide, which is applied in the field of semiconductor nanomaterial preparation, can solve the problems of low material deposition rate and Se vacancies, and achieve high material deposition rate, large nanosheet size, and easy control

Inactive Publication Date: 2018-08-21
FUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the deposition rate of materials prepared by this method is low, which is easy to cause the generation of Se vacancies. Nanostructures with different shapes can be obtained by changing the size of the growth airflow, and then some characterization methods are used to study the influence of airflow on the growth of nanomaterials. High-quality nanomaterials are particularly necessary

Method used

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  • Method for preparing bismuth selenide nanosheet on mica substrate by controlling gas flow
  • Method for preparing bismuth selenide nanosheet on mica substrate by controlling gas flow
  • Method for preparing bismuth selenide nanosheet on mica substrate by controlling gas flow

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Experimental program
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Effect test

Embodiment 1

[0020] Take 0.3g high-purity Bi 2 Se 3 The powder is placed at one end of the quartz boat as the source material, and the freshly stripped mica substrate is placed at a position downstream of the carrier gas 32cm away from the source material, and then the quartz boat is placed in a single-port quartz tube with a diameter of 6cm, and high-purity argon is used as the carrier gas To transport the source material vapor, a thin quartz tube with a diameter of 5 mm is inserted into the single-port quartz tube for gas delivery. First use a mechanical pump to evacuate the chemical vapor deposition system to 15Pa, and then use high-purity argon gas to wash it for more than 3 times to exhaust the residual oxygen in the quartz tube. When the tube furnace reaches the set growth temperature of 600°C, push the quartz tube into the tube furnace so that the source material is located in the center of the tube furnace, and at the same time turn on the gas flow meter to feed 50 sccm high-purit...

Embodiment 2

[0022] Take 0.3g high-purity Bi 2 Se 3 The powder is placed at one end of the quartz boat as the source material, and the freshly stripped mica substrate is placed at a position downstream of the carrier gas 32cm away from the source material, and then the quartz boat is placed in a single-port quartz tube with a diameter of 6cm, and high-purity argon is used as the carrier gas To transport the source material vapor, a thin quartz tube with a diameter of 5 mm is inserted into the single-port quartz tube for gas delivery. First use a mechanical pump to evacuate the chemical vapor deposition system to 15Pa, and then use high-purity argon gas to wash it for more than 3 times to exhaust the residual oxygen in the quartz tube. When the tube furnace reaches the set growth temperature of 600°C, push the quartz tube into the tube furnace so that the source material is located in the center of the tube furnace, and at the same time turn on the gas flow meter to feed in 70 sccm high-pu...

Embodiment 3

[0024] Take 0.3g high-purity Bi 2 Se 3 The powder is placed at one end of the quartz boat as the source material, and the freshly stripped mica substrate is placed at a position downstream of the carrier gas 32cm away from the source material, and then the quartz boat is placed in a single-port quartz tube with a diameter of 6cm, and high-purity argon is used as the carrier gas To transport the source material vapor, a thin quartz tube with a diameter of 5 mm is inserted into the single-port quartz tube for gas delivery. First use a mechanical pump to evacuate the chemical vapor deposition system to 15Pa, and then use high-purity argon gas to wash it for more than 3 times to exhaust the residual oxygen in the quartz tube. When the tube furnace reaches the set growth temperature of 600°C, push the quartz tube into the tube furnace so that the source material is located in the center of the tube furnace, and at the same time turn on the gas flow meter to feed in 90 sccm high-pu...

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Abstract

The invention discloses a method for preparing a bismuth selenide nanosheet on a mica substrate by controlling the gas flow. A catalyst assistance-free chemical vapor deposition method is adopted, anda tubular furnace with a one-port quartz tube is used as growth equipment; the flow of high-purity argon is 70 sccm, and the growth time is 30 min; the Bi2Se3 nanosheet grows on the mica substrate according to a gas-solid growth mechanism; the experimental method is simple and feasible, and has a wide application prospect.

Description

technical field [0001] The invention relates to the field of preparation of semiconductor nanomaterials, in particular to a method for preparing bismuth selenide nanosheets on a mica substrate by controlling gas flow. Background technique [0002] Topological insulator is a new type of quantum functional material, which is different from traditional conductors and insulators, so it has become one of the research hotspots in recent years. The surface state of a three-dimensional topological insulator has only one Dirac point, and the surface has an ultra-low loss state. These important characteristics ensure that topological insulators will be possible in the future development of thermoelectric, electrochemical, optoelectronic devices, solar cells and infrared spectroscopy. It plays an important role in the application and has great application potential. There are many methods for preparing topological insulators, which can be roughly divided into mechanical exfoliation, m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/04B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00C01B19/007C01P2002/82C01P2004/03C01P2004/61
Inventor 俞金玲谷鹏曾晓琳程树英赖云锋郑巧周海芳赵宜升
Owner FUZHOU UNIV
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