Method for preparing two-dimensional indium trisulfide mono-crystals on mica substrate

Abstract

The invention discloses a method for preparing two-dimensional indium trisulfide mono-crystals on a mica substrate. The method comprises the following steps: S1; washing a mica sheet; S2: preparing materials: weighing 10 to 15mg of indium trisulfide powder; putting indium trisulfide powder on a clean quartz boat; flatly placing the washed mica sheet on the quartz boat; then putting the quartz boatin a tubular furnace; S3: controlling gas flow: completely switching on a gas inlet valve and a gas outlet valve of the tubular furnace; opening an argon gas bottle and adjusting the gas flow mount of a gas flow meter to 500 to 600sccm; introducing argon gas into a quartz pipe of the tubular furnace for 10 to 30min to discharge all air impurities; S4: heating and growing: opening the tubular furnace and raising the temperature to 980 DEG C within 20min; after keeping heat at 980 DEG C for 5 to 10min, naturally cooling to obtain the two-dimensional indium trisulfide mono-crystals. The method disclosed by the invention has the advantages of simple needed equipment and preparation technology, short growth time, capability of directly obtaining two-dimensional indium trisulfide with good crystallization degree relatively high purity and relatively large size and the like.

Description

technical field [0001] The invention relates to the fields of two-dimensional semiconductor single crystal material preparation technology and device preparation technology, in particular to a method for preparing a two-dimensional indium trisulfide single crystal on a mica substrate. Background technique [0002] Physical vapor deposition method: using physical methods, the material source—solid or liquid surface is vaporized into gaseous atoms, molecules or parts are ionized into ions, and a film with a special function is deposited on the surface of the substrate. [0003] There are three different crystal structures of In2S3: α-In2S3, β-In2S3 and γ-In2S3. Among them, β-In2S3 is an n-type semiconductor with a band gap of 1.9-2.3eV, which is stable at room temperature. Most importantly, due to the mismatch between In and S atoms, β-In2S3 is a typical natural defect crystal with trapping level or intermediate band (IB) in the bandgap, which leads to interesting optical, el...

AI Technical Summary

Problems solved by technology

Although the production cost of this method is low, the prepared diindium trisulfide is three-dimensional, and most of them are polycrystalline or amorphous, and there are many crystal defects, which is not conducive to the further improvement of performance.

There are also researchers who have grown two-dimensional indium trisulfide by chemical vapor deposition, but its crystal size is small, which is not conducive to the further application of materials.

At present, no large-scale two-dimensional indium trisulfide single crystal material has been successfully grown at home and abroad, but the crystal size of two-dimensional indium trisulfide directly prepared by physical vapor deposition can reach more than 80 microns, plus The process is simple, the growth time is short, and the crystallization is good, which will be beneficial to the improvement of all aspects of performance

Images