Method for preparing non-layered two-dimensional nano-cadmium sulfide crystal material and product

A two-dimensional nano and crystalline material technology, applied in the growth of polycrystalline materials, chemical instruments and methods, nanotechnology, etc., can solve the problems of difficult transfer device processing, weak interlayer force, complex process, etc., and achieve cadmium and sulfur Uniform distribution of elements, increase the reaction energy barrier of the crystal surface, and the effect of smoothing the surface of the crystal surface

Active Publication Date: 2018-05-18
HUAZHONG UNIV OF SCI & TECH
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Problems solved by technology

However, the graphene band gap is zero, and the transistor made of graphene cannot be turned off, which limits its application in optoelectronic devices and digital electronic devices to a certain extent. For this field, the ideal material is semiconductor , although there are also many methods for modifying graphene to make the bandgap adjustable, but they all encounter the problems of complex process and high cost, and are not suitable for application in the field of general semiconductor micro-nano devices. However, in graphene The successful experience in preparation has inspired researchers to explore alternative semiconductor two-dimensional materials; now there are also many graphene-like two-dimensional materials that have attracted the attention of many scholars, especially transition metal sulfides and III-VI two-dimensional materials Such as GaSe, InSe, GaS and Group IV-VI two-dimensional materials such as SnSe 2 ,SnS 2 etc. Due to the weak van der Waals force between layers, the preparation and research of two-dimensional materials are mainly focused on layered materials. However, there are a large number of non-layered materials in nature that also have good properties. Due to They possess three-dimensional chemical bonding that is rarely reported
[0003] Cadmium sulfide (C

Method used

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  • Method for preparing non-layered two-dimensional nano-cadmium sulfide crystal material and product
  • Method for preparing non-layered two-dimensional nano-cadmium sulfide crystal material and product
  • Method for preparing non-layered two-dimensional nano-cadmium sulfide crystal material and product

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preparation example Construction

[0030] figure 1 It is a schematic diagram of the preparation of the non-layered two-dimensional nano-cadmium sulfide crystal material constructed according to the preferred embodiment of the present invention, such as figure 1 As shown, the present invention provides a method for preparing a two-dimensional non-layered nano-CdS crystal material (the thickness of a single crystal is below 10 nanometers), thereby producing a large number of two-dimensional CdS crystals with smooth surface, large size, ultrathin, and uniform element distribution material, the compound can be used to manufacture micro-nano optoelectronic devices, etc. The preparation method includes:

[0031] (1) Using a tube furnace, the preparation temperature ranges from 870°C to 950°C;

[0032] (2) Select Cd source and S source and place them in the upstream area, which is 13-18 cm away from the central area. The Cd source is cadmium sulfide or cadmium chloride, and the S source is elemental sulfur;

[0033...

Embodiment 1

[0039] Example of elemental sulfur and cadmium sulfide as reaction source substances and diindium trisulfide as surface inhibitor

[0040] A horizontal tube furnace is adopted, the tube length is 80cm, the range of the constant temperature zone is ±10cm, the temperature in the central area is set to 930°C, the heating rate is 30°C / min, and 10mg of diindium trisulfide is placed in the central area;

[0041] Select cadmium sulfide (CdS) (>98%) 5mg as the cadmium source and sulfur source, select sulfur powder (S) 20mg (≥99%) as the supplementary sulfur source, and these two substances are placed close to each other independently (not mixed) respectively Place a distance of 13 cm from the central area and 18 cm upstream. Directly adopt commercially available mica as the substrate, and place it in the downstream area at a distance of 15 cm from the central area to receive the product;

[0042] Before the reaction, pre-evacuate to about 10Pa atmospheric pressure, then fill it with ...

example 2

[0044] A horizontal tube furnace is used, with a tube length of 80cm, a constant temperature zone range of ±10cm, the temperature in the central area is set to 870°C, the heating rate is 30°C / min, and 15mg of indium chloride is placed in the central area;

[0045] Choose cadmium chloride (Cdcl) (>98%) 8mg as cadmium source and sulfur source, choose sulfur powder (S) 30mg (≥99%) as supplementary sulfur source, and these two substances are placed independently close to each other (not mixed) Place the distances at the upstream area of ​​13cm and 21cm from the central area, respectively. Directly adopt commercially available mica as the substrate, and place it in the downstream area at a distance of 18 cm from the central area to receive the product;

[0046] Before the reaction, pre-evacuate to about 10Pa atmospheric pressure, then fill it with Ar to atmospheric pressure, and repeat gas washing for at least 3 times to eliminate residual oxygen. During the reaction, Ar (150 sccm...

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Abstract

The invention belongs to the field of cadmium sulfide crystal materials, and discloses a method for preparing a non-layered two-dimensional nano-cadmium sulfide crystal material and the product. The method includes the following steps that (a) a reaction vessel is selected and divided into an upstream area, a central area and a downstream area, and a Cd source and an S source are selected and separately placed in the upstream area; (b) an In compound is selected as a surface inhibitor and placed in the central area, and mica is selected as a substrate and placed in the downstream area; (c) inert gas is introduced into the reaction vessel to isolate oxygen for a reaction, and after the reaction, the desired non-layered two-dimensional nano-cadmium sulfide crystal material is formed on the mica substrate. The invention further discloses the product prepared through the method. By means of the method, the requirement for large-batch preparation of the two-dimensional nano-CdS crystal material is met, and the product has a flat crystal surface and a uniform morphology and is uniform in element distribution; besides, rich raw materials are available, the price is low, the preparation method is simple, and large-scale production and promotion are convenient.

Description

technical field [0001] The invention belongs to the field of cadmium sulfide crystal materials, and more specifically relates to a method and product for preparing non-layered two-dimensional nanometer cadmium sulfide crystal materials. Background technique [0002] The discovery of graphene has given a huge boost to the study of two-dimensional materials, materials that are only a few atoms thick and can have very different fundamental properties. Many researchers have since exploited the substance's many applications, from making bendable screens to energy storage. However, the graphene band gap is zero, and the transistor made of graphene cannot be turned off, which limits its application in optoelectronic devices and digital electronic devices to a certain extent. For this field, the ideal material is semiconductor , although there are also many methods for modifying graphene to make the bandgap adjustable, but they all encounter the problems of complex process and high...

Claims

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Application Information

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IPC IPC(8): C30B25/00C30B29/50B82Y40/00
CPCB82Y40/00C30B25/00C30B29/50
Inventor 张骐金宝周兴翟天佑
Owner HUAZHONG UNIV OF SCI & TECH
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