Preparation method, product and application of flexible vanadium dioxide film

A vanadium dioxide and thin film technology, applied in the field of functional thin film preparation and application, can solve problems such as lattice mismatch, and achieve the effects of remarkable performance, simple process and low price

Active Publication Date: 2016-08-24
UNIV OF SCI & TECH OF CHINA
View PDF3 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the lattice mismatch between mica and vanadium dioxide has ra...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method, product and application of flexible vanadium dioxide film
  • Preparation method, product and application of flexible vanadium dioxide film
  • Preparation method, product and application of flexible vanadium dioxide film

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0046] A method for preparing a flexible vanadium dioxide film, characterized in that it comprises the steps of:

[0047] Step 1: Select the mica sheet as the substrate, and clean the mica sheet by peeling off the surface contamination layer;

[0048] Step 2: Place the mica sheet obtained in step 1 on the rotary heating table of the molecular beam epitaxy growth chamber; then close the molecular beam epitaxy growth chamber and vacuumize; the rotary table of the molecular beam epitaxy growth chamber has a heating function;

[0049] Step 3: Cover the mica substrate with the built-in baffle of the molecular beam epitaxy growth chamber, rotate the rotary table of the molecular beam epitaxy growth chamber horizontally and heat up until the mica sheet is heated to 500-650°C, keep the temperature and rotate;

[0050] Step 4: Install the vanadium source into the electron heat gun, and start the high-voltage electron beam generating module in the electron heat gun; the preferred elect...

Embodiment 1

[0075] Select a 2-inch round mica as a substrate, and use tweezers or tape to peel off the mica surface contamination layer. Quickly put it into the sample chamber of the molecular beam epitaxy equipment.

[0076] Transfer the mica substrate to the growth chamber of the molecular beam epitaxy equipment. At this time, the vacuum degree of the growth chamber is 5.5×10 - 6 Pa, and then the substrate was rotated at a constant speed of 4 revolutions per minute, and at the same time, the substrate was heated at a heating rate of 30° C. / min, and the temperature was raised to 550° C.

[0077] Open the oxygen valve to feed high-purity oxygen with a purity of 6N (99.9999%), adjust the gas flow meter to keep the oxygen flow at 4.5 sccm, turn on the RF source, and adjust the RF power to fully dissociate oxygen into highly reactive oxygen atom beams. Turn on the electron gun for heating, evaporate the metal vanadium with a purity of 99.99% to produce a vanadium atom beam, and measure its...

Embodiment 2

[0082] Select a 2-inch round mica as a substrate, and use tweezers or tape to peel off the mica surface contamination layer. Quickly put it into the sample chamber of the molecular beam epitaxy equipment.

[0083] Transfer the mica substrate to the growth chamber of the molecular beam epitaxy equipment. At this time, the vacuum degree of the growth chamber is 5.5×10 - 6 Pa, and then the substrate was rotated at a constant speed of 4 revolutions per minute, and at the same time, the substrate was heated at a heating rate of 30° C. / min, and the temperature was raised to 550° C.

[0084] Open the oxygen valve to feed high-purity oxygen with a purity of 6N (99.9999%), adjust the gas flow meter to keep the oxygen flow at 4.5 sccm, turn on the RF source, and adjust the RF power to fully dissociate oxygen into highly reactive oxygen atom beams. Turn on the electron gun for heating, vaporize the metal vanadium with a purity of 99.99% to generate a vanadium atom beam, measure its rat...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Total thicknessaaaaaaaaaa
Total thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides a preparation method for directly depositing a crystalline vanadium dioxide film on a flexible mica substrate and a product and application of the flexible vanadium dioxide film. According to the method, the vanadium dioxide film with adjustable thickness, flexibility and light transmission performance is grown on the mica sheet substrate, and the flexibility of the product is adjusted in a peeling mode. The product has the advantages of being high in transparency, flexibility and transferability and excellent in infrared regulation performance and can be applied to the fields of flexible smart windows, infrared laser protection, energy-saving coatings and optical switches.

Description

technical field [0001] The invention belongs to the field of functional thin film preparation and application, in particular to a flexible and transferable vanadium dioxide thin film and its application. Background technique [0002] Vanadium dioxide is a transition metal oxide with metal-insulator transition. Its crystal structure can reversibly change from insulating monoclinic phase to metal tetragonal phase at a phase transition temperature of 68 °C, accompanied by a resistance jump of 3-5 orders of magnitude and excellent infrared switching performance. It has broad application prospects in energy-saving smart windows, photoelectric switches, infrared imaging, photoresistors, optical storage, infrared laser protection and other fields. It is precisely because of these outstanding properties that since the first discovery of vanadium dioxide by Bell Laboratories in the United States in the 1950s, it has attracted extensive attention in physics, chemistry, materials and ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C23C14/08C23C14/30
CPCC23C14/0021C23C14/083C23C14/30
Inventor 邹崇文陈宇粮陈实樊乐乐
Owner UNIV OF SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap