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Method for epitaxial growth of monocrystalline barium titanate film on germanium substrate

A single crystal barium titanate, epitaxial growth technology, applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve the problems of easy oxidation, complicated process, high cost, etc., to achieve clear interface, smooth film surface, low cost effect

Active Publication Date: 2019-06-18
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The main difficulty is that the germanium surface is easily oxidized in the early stage of oxide growth, forming an amorphous oxide layer, which makes the barium titanate film lose the epitaxial lattice order.
The commonly used method at this stage is to use ultra-high vacuum equipment such as molecular beam epitaxy to passivate the surface and grow a buffer layer to obtain an epitaxial single crystal barium titanate film. Development and Promotion of Optoelectronic Devices

Method used

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  • Method for epitaxial growth of monocrystalline barium titanate film on germanium substrate
  • Method for epitaxial growth of monocrystalline barium titanate film on germanium substrate
  • Method for epitaxial growth of monocrystalline barium titanate film on germanium substrate

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Experimental program
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Effect test

Embodiment 1

[0041] 1) Use acetone, alcohol, and deionized water to ultrasonically clean the Ge(001) substrate in sequence;

[0042] 2) Load the cleaned Ge(001) substrate into the chamber of the pulsed laser deposition system, and pump the chamber to the back vacuum;

[0043] 3) heating the substrate to 800°C;

[0044] 4) annealing for 30 minutes;

[0045] 5) Maintain the air pressure at 5×10 -4 Pa, temperature 800°C;

[0046] 6) Turn on the pulse laser and control the laser energy density to 1.77J / cm 2 , the growth frequency is 2Hz, and the film is grown;

[0047] 7) End the growth, pass air into the cavity, and take out the sample.

[0048] Such as figure 1 , the TEM image of the interface of the grown film, it can be seen that the interface is clear and there is no interdiffusion of atoms. Such as figure 2 , the crystallization XRD pattern of the film obtained after growth, it can be seen that the film grows epitaxially. Such as image 3 , the AFM image of the surface morphol...

Embodiment 2

[0050] 1) Use acetone, alcohol, and deionized water to ultrasonically clean the Ge(001) substrate in sequence;

[0051] 2) Load the cleaned Ge(001) substrate into the chamber of the pulsed laser deposition system, and pump the chamber to the back vacuum;

[0052] 3) heating the substrate to 800°C;

[0053] 4) annealing for 30 minutes;

[0054] 5) Maintain the air pressure at 5×10 -4 Pa, temperature 500°C;

[0055] 6) Turn on the pulse laser and control the laser energy density to 1J / cm 2 , with a growth frequency of 1 Hz, for film growth;

[0056] 7) End the growth, pass air into the cavity, and take out the sample.

Embodiment 3

[0058] 1) Use acetone, alcohol, and deionized water to ultrasonically clean the Ge(001) substrate in sequence;

[0059]2) Load the cleaned Ge(001) substrate into the chamber of the pulsed laser deposition system, and pump the chamber to the back vacuum;

[0060] 3) heating the substrate to 800°C;

[0061] 4) annealing for 30 minutes;

[0062] 5) Maintain the air pressure at 5×10 -4 Pa, temperature 650°C;

[0063] 6) Turn on the pulse laser and control the laser energy density to 5J / cm 2 , the growth frequency is 10Hz, and the film is grown;

[0064] 7) End the growth, pass air into the cavity, and take out the sample.

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Abstract

The invention discloses a method for epitaxial growth of a monocrystalline barium titanate film on a germanium substrate, and belongs to the field of epitaxial preparation of monocrystalline films. The method comprises the following steps: ultrasonically cleaning a (001)-oriented Ge substrate, filling the chamber of a pulsed laser deposition system with the (001)-oriented Ge substrate, evacuatingthe chamber to the vacuum of the background, heating the substrate to 800 DEG C, maintaining a certain pressure and a certain temperature, annealing the substrate to reconstruct the surface in order to crystallize the film in the subsequent film growth process, adjusting the pressure and the temperature, controlling the temperature to be 500-800 DEG C, turning on a laser to grow a film, stopping the growth after the film grows to a certain degree, naturally cooling the substrate, introducing air into the chamber after the obtained sample is cooled to room temperature, opening the chamber, andtaking out the sample to complete growth. The method simply and cheaply realizes the epitaxial growth of the barium titanate film on Ge, and the obtained film has the characteristics of clear interface, monocrystalline epitaxial growth and smooth film surface.

Description

【Technical field】 [0001] The invention belongs to the field of epitaxial preparation of single crystal thin films, in particular to a method for epitaxially growing single crystal barium titanate thin films on germanium substrates. 【Background technique】 [0002] Perovskite oxide materials have a variety of functionalities, such as dielectric, piezoelectric (ferro)electricity, ferromagnetism and so on. Barium titanate (BaTiO 3 ) is a typical representative, it is a ferroelectric (piezoelectric) material widely used in the fields of micro-electromechanical integration, non-volatile storage, actuators, etc., and its functionality is expressed in the single crystal epitaxial form more excellent. Integrating functional perovskite oxides represented by barium titanate with semiconductor substrates, such as silicon or germanium, can not only help realize transistor electronic circuits with better performance, but also help realize a variety of new functional device. Different ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/32C30B23/06
Inventor 牛刚代立言任巍赵金燕王延昆武和平刘逸为王玲艳史鹏
Owner XI AN JIAOTONG UNIV
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