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A wide temperature thin film energy storage capacitor modified by rare earth elements and its preparation method

A technology of energy storage capacitors and rare earth elements, applied in the direction of thin film/thick film capacitors, capacitors, fixed capacitors, etc.

Active Publication Date: 2020-10-27
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the vast majority of research only stays on the improvement of the performance of ferroelectric film capacitors at room temperature

Method used

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  • A wide temperature thin film energy storage capacitor modified by rare earth elements and its preparation method
  • A wide temperature thin film energy storage capacitor modified by rare earth elements and its preparation method
  • A wide temperature thin film energy storage capacitor modified by rare earth elements and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] (1) Preparation of BaHf 0.17 Ti 0.83 o 3 Ceramic target: according to BaHf 0.17 Ti 0.83 o 3 The stoichiometric ratio weighs 4-5N level BaTiO 3 High purity powder and HfO 2 High-purity powder, after the two are mixed evenly, the mixture is sequentially subjected to ball milling, pre-sintering, secondary ball milling, granulation, molding and sintering processes to obtain flaky BaHf 0.17 Ti 0.83 o 3 Ceramic target. The process parameters of ball milling and secondary ball milling are the same, specifically: the mass ratio of ball stone, mixture and alcohol is 2:1:1, the ball milling speed is 400r / min, and the ball milling time is 6h; the pre-sintering temperature is 900°C, The sintering time is 4h; a tablet press is used for molding, the pressure during the molding process is 40Mpa, and the holding time is 5min; the sintering temperature in the sintering process is 1050°C, and the sintering time is 4h.

[0045] (2) Clean substrate: Conductive single crystal SrTi...

Embodiment 2

[0058] (1) Preparation of BaHf 0.17 Ti 0.83 o 3 Ceramic target: according to BaHf 0.17 Ti 0.83 o 3 The stoichiometric ratio weighs 4-5N level BaTiO 3 High purity powder and HfO 2 High-purity powder, after the two are mixed evenly, the mixture is sequentially subjected to ball milling, pre-sintering, secondary ball milling, granulation, molding and sintering processes to obtain flake-shaped BaHf 0.17 Ti 0.83 o 3 Ceramic target. The process parameters of ball milling and secondary ball milling are the same, specifically: the mass ratio of ball stones, mixture and alcohol is 2:1:1, the ball milling speed is 380r / min, and the ball milling time is 5h; the pre-sintering temperature is 855°C, The sintering time is 3h; a tablet press is used for molding, the pressure during the molding process is 38Mpa, and the holding time is 4min; the sintering temperature in the sintering process is 1000°C, and the sintering time is 3h.

[0059] (2) Clean substrate: Conductive single crys...

Embodiment 3

[0065] (1) Preparation of BaHf 0.17 Ti 0.83 o 3 Ceramic target: according to BaHf 0.17 Ti 0.83 o 3 The stoichiometric ratio weighs 4-5N level BaTiO 3 High purity powder and HfO 2 High-purity powder, after the two are mixed evenly, the mixture is sequentially subjected to ball milling, pre-sintering, secondary ball milling, granulation, molding and sintering processes to obtain flaky BaHf 0.17 Ti 0.83 o 3 Ceramic target. The process parameters of ball milling and secondary ball milling are the same, specifically: the mass ratio of ball stone, mixture and alcohol is 2:1:1, the ball milling speed is 420r / min, and the ball milling time is 7h; the pre-sintering temperature is 945°C, The sintering time is 4h; a tablet press is used for molding, the pressure during the molding process is 40Mpa, and the holding time is 5min; the sintering temperature in the sintering process is 1100°C, and the sintering time is 5h.

[0066] (2) Clean substrate: Conductive single crystal SrTi...

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Abstract

The invention relates to the field of energy storage thin film materials, and discloses a rare earth element modified wide temperature film energy-storage capacitor and a preparation method thereof. The preparation method is characterized by adopting an ultrahigh vacuum radio frequency magnetron sputtering technology, in the high temperature and high oxygen pressure environment, by performing bombardment on a target material through a plasma to enable the particles of the target material to be deposited on a substrate, realizing epitaxial growth, and then obtaining a BHT epitaxial film. Due tocharacteristics of the radio frequency magnetron sputtering technology, the growing speed of the film is slower relatively, so that the film prepared by the preparation method is uniform in the crystal grain size, is flat in the surface of the film, has high degree of crystallization, and further enhances the energy storage feature of the ceramic target material taken as the BT-base energy storage material.

Description

technical field [0001] The invention relates to the field of energy storage thin film materials, in particular to a rare earth element modified wide temperature thin film energy storage capacitor and a preparation method thereof. Background technique [0002] The energy crisis has become an important issue of globalization. The country has also issued important instructions on the development direction of new energy and new material industries. Therefore, the development and performance improvement of energy materials is imminent. Compared with lithium-ion batteries, supercapacitors, and perovskite solar cells, ferroelectric energy storage capacitors have the advantages of fast charging and discharging, low cost, and long service life. Compared with ceramic bulk capacitors, single crystal bulk capacitors, ceramic thick film capacitors and flexible polymer capacitors, ferroelectric energy storage capacitors are often It has higher breakdown field strength, greater polarizati...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G4/12H01G4/33C23C14/06C23C14/35C23C14/54C23C14/58C30B23/02
CPCC23C14/06C23C14/3457C23C14/35C23C14/542C23C14/5806C30B23/025H01G4/1227H01G4/33
Inventor 刘明孙梓雄
Owner XI AN JIAOTONG UNIV
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