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Lead-free epitaxial thin film with wide working temperature and preparation method thereof

A wide working temperature, epitaxial thin film technology, applied in chemical instruments and methods, metal material coating process, ion implantation plating, etc. Effect of temperature and stable breakdown field strength

Active Publication Date: 2020-03-06
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to overcome the problem of low working temperature in lead-free films, and to provide a wide working temperature lead-free epitaxial film and its preparation method

Method used

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  • Lead-free epitaxial thin film with wide working temperature and preparation method thereof
  • Lead-free epitaxial thin film with wide working temperature and preparation method thereof
  • Lead-free epitaxial thin film with wide working temperature and preparation method thereof

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Embodiment Construction

[0039] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments.

[0040] The wide operating temperature lead-free epitaxial film of the present invention is a lead-free epitaxial film with higher operating temperature characteristics, and is a barium titanate-based lead-free epitaxial film. The preparation method comprises the following steps:

[0041] Step (1) Weigh the corresponding raw materials according to the chemical formula, wherein, the BST ceramic target (i.e. used for growing Ba 0.3 Sr 0.7 TiO 3 Thin film ceramic target) BaCO with a purity level of 4-5N 3 Powder, SrCO 3 Powder, TiO 2 Powder prepared, BT-BMZ ceramic target (that is, used to grow 0.85BaTiO 3 -0.15Bi(Mg 0.5 Zr 0.5 )O 3 Thin film ceramic target) is BaCO with a purity level of 4-5N 3 Powder, Bi 2 o 3 Powder, TiO 2 powder, MgO powder and ZrO 2 When sintering the above two ceramic targets, the sintering temperature is 100-20...

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Abstract

The invention relates to the field of energy storage thin-film materials and discloses a lead-free epitaxial thin film with wide working temperature and a preparation method thereof. The lead-free epitaxial thin film comprises a Nb:SrTiO3 substrate and a thin film body, wherein the thin film body is arranged on the upper surface of the Nb:SrTiO3 substrate; the thin film body is Ba0.3Sr0.7TiO3 / 0.85BaTiO3-0.15Bi(Mg0.5Zr0.5)O3 composite multilayer thin film; and the structure of the lead-free epitaxial thin film is Nb:SrTiO3 / Ba0.3Sr0.7TiO3 / 0.85BaTiO3-0.15Bi(Mg0.5Zr0.5)O3. The lead-free epitaxialthin film with wide working temperature does not contain lead and has excellent energy storing property, and more importantly, the lead-free epitaxial thin film has high thermal stability within the wide temperature area of 25-250 DEG C, and the working temperature of the lead-free epitaxial thin film is far higher than that of other lead-free thin films.

Description

technical field [0001] The invention relates to the field of energy storage thin film materials, in particular to a wide working temperature lead-free epitaxial thin film and a preparation method thereof. Background technique [0002] As one of the energy storage components, dielectric capacitors have been widely used in hybrid electric vehicles, wind power generation, aerospace, oil drilling and other fields because of their fast charge and discharge. However, with the development of electronic devices towards miniaturization, integration, and light weight, it is urgent to improve the energy storage characteristics and thermal stability of capacitors at high temperatures. On the one hand, aerospace, oil drilling and other fields require the working temperature of capacitors to be higher than 150°C, while the widely used X7R and X8R can only be used below 125°C and 150°C respectively, which cannot meet the requirements of higher temperatures. On the other hand, due to the u...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/08C30B29/32C30B29/22C30B23/02
CPCC23C14/08C23C14/088C23C14/3414C23C14/35C30B23/02C30B29/22C30B29/32
Inventor 马春蕊胡天翼
Owner XI AN JIAOTONG UNIV
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